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DISCRETE SEMICONDUCTORS
DATA SHEET
BF1201; BF1201R; BF1201WR
N-channel dual-gate PoLo
MOS-FETs
Product specification 2000 Mar 29
Supersedes data of 1999 Dec 01
NXP Semiconductors Product specification
BF1201; BF1201R;
N-channel dual-gate PoLo MOS-FETs
BF1201WR
FEATURES PINNING
Short channel transistor with high PIN DESCRIPTION 3
handbook, 2 columns 4
forward transfer admittance to input
1 source
capacitance ratio
2 drain
Low noise gain controlled amplifier
3 gate 2
Partly internal self-biasing circuit to 2 1
ensure good cross-modulation 4 gate 1
Top view MSB035
performance during AGC and good
DC stabilization.
BF1201R marking code: LBp
APPLICATIONS
Fig.2 Simplified outline
VHF and UHF applications with (SOT143R).
3 to 9 V supply voltage, such as
digital and analogue television
tuners and professional
communications equipment.
4
handbook, 2 columns 3 lfpage 3 4
DESCRIPTION
Enhancement type N-channel
field-effect transistor with source and
1 2 2 1
substrate interconnected. Integrated
diodes between gates and source Top view MSB014 Top view MSB842
protect against excessive input
voltage surges. The BF1201, BF1201 marking code: LAp. BF1201WR marking code: LA
BF1201R and BF1201WR are
encapsulated in the SOT143B, Fig.1 Simplified outline Fig.3 Simplified outline
SOT143R and SOT343R plastic (SOT143B). (SOT343R).
packages respectively.
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
VDS drain-source voltage 10 V
ID drain current 30 mA
Ptot total power dissipation 200 mW
yfs forward transfer admittance 23 28 35 mS
Cig1-ss input capacitance at gate 1 2.6 3.1 pF
Crss reverse transfer capacitance f = 1 MHz 15 30 fF
F noise figure f = 400 MHz 1 1.8 dB
Xmod cross-modulation input level for k = 1% at 105 dBV
40 dB AGC
Tj operating junction temperature 150 C
CAUTION
This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport
and handling.
2000 Mar 29 2
NXP Semiconductors Product specification
N-channel dual-gate PoLo MOS-FETs BF1201; BF1201R; BF1201WR
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VDS drain-source voltage 10 V
ID drain current (DC) 30 mA
IG1 gate 1 current 10 mA
IG2 gate 2 current 10 mA
Ptot total power dissipation
BF1201; BF1201R Ts 113 C; note 1 200 mW
BF1201WR Ts 109 C; note 1 200 mW
Tstg storage temperature 65 +150 C
Tj operating junction temperature 150 C
Note
1. Ts is the temperature of the soldering point of the source lead.
THERMAL CHARACTERISTICS
SYMBOL PARAMETER VALUE UNIT
Rth j-s thermal resistance from junction to soldering point
BF1201; BF1201R 185 K/W
BF1201WR 155 K/W
MCD934
250
handbook, halfpage
Ptot
(mW)
200
(2) (1)
150
100
50
0
0 50 100 150 200
Ts (