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Power Transistors

2SC5552
Silicon NPN triple diffusion mesa type
Unit: mm

For horizontal deflection output
(10.0)

15.5±0.5

3.2±0.1 5°

3.0±0.3 5°

26.5±0.5

(23.4)
5° 5° 5° 0.7±0.1

I Features
· High breakdown voltage, and high reliability through the use of a glass passivation layer · High-speed switching · Wide area of safe operation (ASO)

(4.5)

(2.0)

18.6±0.5 (2.0) Solder Dip

(4.0) 2.0±0.2 1.1±0.1

I Absolute Maximum Ratings TC = 25°C
Parameter Collector to base voltage Collector to emitter voltage Symbol VCBO VCES VCEO Emitter to base voltage Peak collector current Collector current Base current Collector power dissipation TC = 25°C Ta = 25°C Tj Tstg VEBO ICP IC IB PC Rating 1 700 1 700 600 7 30 16 8 65 3.5 150 -55 to +150 °C °C Unit V V V V A A A W

5.45±0.3 10.9±0.5

3.3±0.3

5°

1

2

3

5.5±0.3

1: Base 2: Collector 3: Emitter TOP-3E Package

Marking Symbol: C5552 Internal Connection
C B

Junction temperature Storage temperature

(2.0)

E

I Electrical Characteristics TC = 25°C ± 3°C
Parameter Collector cutoff current Symbol ICBO IEBO hFE VCE(sat) VBE(sat) fT tstg tf Conditions VCB = 1 000 V, IE = 0 VCB = 1 700 V, IE = 0 Emitter cutoff current Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Storage time Fall time VEB = 7 V, IC = 0 VCE = 5 V, IC = 8 A IC = 8 A, IB = 2 A IC = 8 A, IB = 2 A VCE = 10 V, IC = 0.1 A, f = 0.5 MHz IC = 8 A, Resistance loaded IB1 = 2 A, IB2 = -4 A 3 3.0 0.2 6 Min Typ Max 50 1 50 12 3 1.5 V V MHz µs µs Unit µA mA µA

22.0±0.5

(1.2)

1