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PD-9.1423


TARGET IRGCC50ME
IRGCC50ME IGBT Die in Wafer Form


C

600 V
Size 5
Fast Speed
G
5" Wafer
E



Electrical Characteristics ( Wafer Form )
Parameter Description Guaranteed (Min/Max) Test Conditions
VCE (on) Collector-to-Emitter Saturation Voltage 2.5V Max. IC = 20A, TJ = 25