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PD - 93793A
RADIATION HARDENED IRHF57Z30
POWER MOSFET 30V, N-CHANNEL
THRU-HOLE (TO-39) 4#
c
TECHNOLOGY
Product Summary
Part Number Radiation Level RDS(on) ID
IRHF57Z30 100K Rads (Si) 0.045 12A*
IRHF53Z30 300K Rads (Si) 0.045 12A*
IRHF54Z30 600K Rads (Si) 0.045 12A*
IRHF58Z30 1000K Rads (Si) 0.056 12A*
TO-39
International Rectifier's R5TM technology provides Features:
high performance power MOSFETs for space appli- n Single Event Effect (SEE) Hardened
cations. These devices have been characterized for n Ultra Low RDS(on)
Single Event Effects (SEE) with useful performance n Neutron Tolerant
up to an LET of 80 (MeV/(mg/cm2)). The combination n Identical Pre and Post Electrical Test Conditions
of low RDS(on) and low gate charge reduces the power n Repetitive Avalanche Ratings
losses in switching applications such as DC to DC n Dynamic dv/dt Ratings
converters and motor control. These devices retain n Simple Drive Requirements
all of the well established advantages of MOSFETs n Ease of Paralleling
such as voltage control, fast switching, ease of paral- n Hermetically Sealed
leling and temperature stability of electrical param-
n Electrically Isolated
eters.
Absolute Maximum Ratings Pre-Irradiation
Parameter Units
ID @ VGS = 12V, TC = 25