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July 1996
NDS8958
Dual N & P-Channel Enhancement Mode Field Effect Transistor
General Description Features
These dual N- and P-Channel enhancement mode power field N-Channel 5.3A, 30V, RDS(ON)=0.035 @ VGS=10V.
effect transistors are produced using Fairchild's proprietary,
P-Channel -4.0A, -30V, RDS(ON)=0.065 @ VGS=-10V.
high cell density, DMOS technology. This very high density
process is especially tailored to minimize on-state resistance High density cell design or extremely low RDS(ON).
and provide superior switching performance. These devices
are particularly suited for low voltage applications such as High power and current handling capability in a widely used
notebook computer power management and other battery
powered circuits where fast switching, low in-line power loss, surface mount package.
and resistance to transients are needed.
Dual (N & P-Channel) MOSFET in surface mount package.
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5 4
6 3
7 2
8 1
Absolute Maximum Ratings T A= 25