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March 1998
FDN337N
N-Channel Logic Level Enhancement Mode Field Effect Transistor
General Description Features
TM
SuperSOT -3 N-Channel logic level enhancement mode 2.2 A, 30 V, RDS(ON) = 0.065 @ VGS = 4.5 V
power field effect transistors are produced using Fairchild's RDS(ON) = 0.082 @ VGS = 2.5 V.
proprietary, high cell density, DMOS technology. This very
high density process is especially tailored to minimize Industry standard outline SOT-23 surface mount
on-state resistance. These devices are particularly suited for package using proprietary SuperSOTTM-3 design for
low voltage applications in notebook computers, portable superior thermal and electrical capabilities.
phones, PCMCIA cards, and other battery powered circuits
High density cell design for extremely low RDS(ON).
where fast switching, and low in-line power loss are needed
in a very small outline surface mount package. Exceptional on-resistance and maximum DC current
capability.
SOT-23 SuperSOTTM-6 SuperSOTTM-8 SO-8 SOT-223 SOIC-16
D D
3 37
S
SuperSOT -3
TM G G S
Absolute Maximum Ratings TA = 25oC unless other wise noted
Symbol Parameter FDN337N Units
VDSS Drain-Source Voltage 30 V
VGSS Gate-Source Voltage - Continuous