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MSD1819A- RT1
-
General Purpose Amplifier
Transistor
NPN Silicon Surface Mount
This NPN Silicon Epitaxial Planar Transistor is designed for general http://onsemi.com
purpose amplifier applications. This device is housed in the
SC-70/SOT-323 package which is designed for low power surface
COLLECTOR
mount applications. 3
Features
High hFE, 210 - 460
-
Low VCE(sat), < 0.5 V
Moisture Sensitivity Level 1
1 2
ESD Protection: Human Body Model > 4000 V BASE EMITTER
Machine Model > 400 V
These Devices are Pb--Free, Halogen Free/BFR Free and are RoHS
Compliant 3
1
2
MAXIMUM RATINGS (TA = 25C)
Rating Symbol Value Unit
SC-
-70 (SOT--323)
Collector-Base Voltage V(BR)CBO 60 Vdc CASE 419
STYLE 3
Collector-Emitter Voltage V(BR)CEO 50 Vdc
Emitter-Base Voltage V(BR)EBO 7.0 Vdc
MARKING DIAGRAM
Collector Current -- Continuous IC 100 mAdc
Collector Current -- Peak IC(P) 200 mAdc
THERMAL CHARACTERISTICS ZR M G
Characteristic Symbol Max Unit G
Power Dissipation (Note 1) PD 150 mW 1
Junction Temperature TJ 150 C
ZR = Device Code
Storage Temperature Range Tstg --55 to +150 C
M = Date Code*
Stresses exceeding Maximum Ratings may damage the device. Maximum G = Pb--Free Package
Ratings are stress ratings only. Functional operation above the Recommended (Note: Microdot may be in either location)
Operating Conditions is not implied. Extended exposure to stresses above the *Date Code orientation may vary depending
Recommended Operating Conditions may affect device reliability. upon manufacturing location.
1. Device mounted on a FR-4 glass epoxy printed circuit board using the
minimum recommended footprint.
ORDERING INFORMATION
Device Package Shipping
MSD1819A--RT1G SC--70/ 3000/Tape & Reel
SOT--323
(Pb--Free)
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Semiconductor Components Industries, LLC, 2010 1 Publication Order Number:
October, 2010 - Rev. 7
- MSD1819A- -RT1/D
MSD1819A-
-RT1
ELECTRICAL CHARACTERISTICS
Characteristic Symbol Min Max Unit
Collector-Emitter Breakdown Voltage (IC = 2.0 mAdc, IB = 0) V(BR)CEO 50 -- Vdc
Collector-Base Breakdown Voltage (IC = 10 mAdc, IE = 0) V(BR)CBO 60 -- Vdc
Emitter-Base Breakdown Voltage (IE = 10 mAdc, IE = 0) V(BR)EBO 7.0 -- Vdc
Collector-Base Cutoff Current (VCB = 20 Vdc, IE = 0) ICBO -- 0.1 mA
Collector-Emitter Cutoff Current (VCE = 10 Vdc, IB = 0) ICEO -- 0.1 mA
DC Current Gain (Note 2) --
(VCE = 10 Vdc, IC = 2.0 mAdc) hFE1 210 340
(VCE = 2.0 Vdc, IC = 100 mAdc) hFE2 90 --
Collector-Emitter Saturation Voltage (Note 2) VCE(sat) -- 0.5 Vdc
(IC = 100 mAdc, IB = 10 mAdc)
2. Pulse Test: Pulse Width 300 ms, D.C. 2%.
250 0.30
IC/IB = 10
VCE(sat), COLLECTOR--EMITTER
PD, POWER DISSIPATION (mW)
0.25
SATURATION VOLTAGE (V)
200
0.20
150
150C
0.15
100
0.10 25C
--55C
50 RJA = 833C/W
0.05
0 0
--50 0 50 100 150 0.0001 0.001 0.01 0.1 1
TA, AMBIENT TEMPERATURE (C) IC, COLLECTOR CURRENT (A)
Figure 1. Derating Curve Figure 2. Collector Emitter Saturation Voltage
vs. Collector Current
450
150C (10 V) 0.95 IC/IB = 10 --55C
VBE(sat), BASE--EMITTER SATURA-
400
150C (2 V) 0.85
hFE, DC CURRENT GAIN
350
25C
TION VOLTAGE (V)
300 25C (10 V) 0.75
250 0.65
25C (2 V)
150C
200
--55C (10 V) 0.55
150
--55C (2 V) 0.45
100
50 0.35
0 0.25
0.0001 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1
IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)
Figure 3. DC Current Gain vs. Collector Figure 4. Base Emitter Saturation Voltage vs.
Current Collector Current
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MSD1819A-
-RT1
VBE(on), BASE--EMITTER TURN ON VOLTAGE (V)
VCE, COLLECTOR--EMITTER VOLTAGE (V)
1.0 1.2
1 mA TA = 25C
0.9
--55C 1.0
0.8 10 mA 50 mA IC = 100 mA
0.8
0.7 25C
0.6 0.6
0.5
150C 0.4
0.4
0.2
0.3
500 mA
0.2 0
0.0001 0.001 0.01 0.1 1 0.000001 0.00001 0.0001 0.001 0.01
IC, COLLECTOR CURRENT (A) IB, BASE CURRENT (A)
Figure 5. Base Emitter Turn--On Voltage vs. Figure 6. Collector Saturation Region
Collector Current
18 6.0
Cobo, OUTPUT CAPACITANCE (pF)
17 5.5
Cibo, INPUT CAPACITANCE (pF)
16 5.0
15
4.5
14
4.0
13 Cibo (pF)
3.5 Cobo (pF)
12
3.0
11
10 2.5
9 2.0
8 1.5
7 1.0
0 1 2 3 4 5 6 0 5 10 15 20 25 30 35 40
Veb, EMITTER BASE VOLTAGE (V) Vcb, COLLECTOR BASE VOLTAGE (V)
Figure 7. Input Capacitance Figure 8. Output Capacitance
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MSD1819A-
-RT1
PACKAGE DIMENSIONS
SC-
-70 (SOT--323)
CASE 419--04
ISSUE N
NOTES:
D 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
e1 2. CONTROLLING DIMENSION: INCH.
MILLIMETERS INCHES
3 DIM MIN NOM MAX MIN NOM MAX
A 0.80 0.90 1.00 0.032 0.035 0.040
HE E A1 0.00 0.05 0.10 0.000 0.002 0.004
1 2 A2 0.70 REF 0.028 REF
b 0.30 0.35 0.40 0.012 0.014 0.016
c 0.10 0.18 0.25 0.004 0.007 0.010
D 1.80 2.10 2.20 0.071 0.083 0.087
b E 1.15 1.24 1.35 0.045 0.049 0.053
e 1.20 1.30 1.40 0.047 0.051 0.055
e e1 0.65 BSC 0.026 BSC
L 0.20 0.38 0.56 0.008 0.015 0.022
HE 2.00 2.10 2.40 0.079 0.083 0.095
STYLE 3:
c
A A2 PIN 1. BASE
2. EMITTER
3. COLLECTOR
0.05 (0.002) L
A1
SOLDERING FOOTPRINT*
0.65
0.65 0.025
0.025
1.9
0.075
0.9
0.035
0.7
0.028
SCALE 10:1 inches
mm
*For additional information on our Pb--Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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-RT1/D
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