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STD75N3LLH6
STU75N3LLH6, STU75N3LLH6-S
N-channel 30 V, 0.0042 , 75 A, DPAK, IPAK, Short IPAK
STripFETTM VI DeepGATETM Power MOSFET

Features
Type VDSS RDS(on) max ID
3
STD75N3LLH6 30 V < 0.0055 75 A 3 1
2
STU75N3LLH6 30 V < 0.0059 75 A 1

STU75N3LLH6-S 30 V < 0.0059 75 A DPAK
IPAK
RDS(on) * Qg industry benchmark
Extremely low on-resistance RDS(on) 3
2
High avalanche ruggedness 1

Low gate drive power losses Short IPAK

Application
Switching applications
Figure 1. Internal schematic diagram

Description
D (TAB or 2)
This product utilizes the 6th generation of design
rules of ST's proprietary STripFETTM technology,
with a new gate structure.The resulting Power
MOSFET exhibits the lowest RDS(on) in all
packages. G(1)




S(3)


AM01474v1



Table 1. Device summary
Order code Marking Package Packaging

STD75N3LLH6 75N3LLH6 DPAK Tape and reel
STU75N3LLH6 75N3LLH6 IPAK Tube
STU75N3LLH6-S 75N3LLH6 Short IPAK Tube




October 2009 Doc ID 15978 Rev 2 1/16
www.st.com 16
Contents STD75N3LLH6, STU75N3LLH6, STU75N3LLH6-S


Contents

1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) ............................ 6

3 Test circuits .............................................. 8

4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10

5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14

6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15




2/16 Doc ID 15978 Rev 2
STD75N3LLH6, STU75N3LLH6, STU75N3LLH6-S Electrical ratings


1 Electrical ratings

Table 2. Absolute maximum ratings
Symbol Parameter Value Unit

VDS Drain-source voltage (VGS = 0) 30 V
VGS Gate-source voltage