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DISCRETE SEMICONDUCTORS
DATA SHEET
BF510 to 513
N-channel silicon field-effect
transistors
Product specification December 1997
NXP Semiconductors Product specification
N-channel silicon field-effect transistors BF510 to 513
DESCRIPTION MARKING CODE
Asymmetrical N-channel planar BF510 = S6p
epitaxial junction field-effect BF511 = S7p
transistors in the miniature plastic
BF512 = S8p
envelope intended for applications up
to the v.h.f. range in hybrid thick and BF513 = S9p
thin-film circuits. Special features are
the low feedback capacitance and the
low noise figure. These features
make the product very suitable for
applications such as the r.f. stages in
f.m. portables (BF510), car radios
handbook, halfpage 3
(BF511) and mains radios (BF512) or
the mixer stage (BF513). d
g
s
PINNING - SOT23
1 2
1 = gate
Top view MAM385
2 = drain
3 = source
Fig.1 Simplified outline and symbol.
QUICK REFERENCE DATA
Drain-source voltage VDS max. 20 V
Drain current (DC or average) ID max. 30 mA
Total power dissipation
up to Tamb = 40 C Ptot max. 250 mW
BF510 511 512 513
Drain current 0.7 2.5 6 10 mA
VDS = 10 V; VGS = 0 IDSS 3.0 7.0 12 18 mA
Transfer admittance (common source)
VDS = 10 V; VGS = 0; f = 1 kHz yfs 2.5 4 6 7 mS
Feedback capacitance
VDS = 10 V; VGS = 0 Crs typ. 0.3 0.3 pF
VDS = 10 V; ID = 5 mA Crs typ. 0.3 0.3 pF
Noise figure at optimum source admittance
GS = 1 mS; BS = 3 mS; f = 100 MHz
VDS = 10 V; VGS = 0 F typ. 1.5 1.5 dB
VDS = 10 V; ID = 5 mA F typ. 1.5 1.5 dB
December 1997 2
NXP Semiconductors Product specification
N-channel silicon field-effect transistors BF510 to 513
RATINGS
Limiting values in accordance with the Absolute Maximum System (IEC 134)
Drain-source voltage VDS max. 20 V
Drain-gate voltage (open source) VDGO max. 20 V
Drain current (DC or average) ID max. 30 mA
Gate current IG max. 10 mA
Total power dissipation up to Tamb = 40 C (note 1) Ptot max. 250 mW
Storage temperature range Tstg 65 to 150 C
Junction temperature Tj max. 150 C
THERMAL RESISTANCE
From junction to ambient (note 1) Rth j-a = 430 K/W
Note
1. Mounted on a ceramic substrate of 8 mm 10 mm 0.7 mm.
STATIC CHARACTERISTICS
Tamb = 25 C
BF510 511 512 513
Gate cut-off current
VGS = 0.2 V; VDS = 0 IGSS 10 10 10 10 nA
Gate-drain breakdown voltage
IS = 0; ID = 10 A V(BR)GDO 20 20 20 20 V
Drain current
0.7 2.5 6 10 mA
VDS = 10 V; VGS = 0 IDSS
< 3.0 7.0 12 18 mA
Gate-source cut-off voltage
ID = 10 A; VDS = 10 V V(P)GS typ. 0.8 1.5 2.2 3 V
December 1997 3
NXP Semiconductors Product specification
N-channel silicon field-effect transistors BF510 to 513
DYNAMIC CHARACTERISTICS
Measuring conditions (common source): VDS = 10 V; VGS = 0; Tamb = 25 C for BF510 and BF511
VDS = 10 V; ID = 5 mA; Tamb = 25 C for BF512 and BF513
y-parameters (common source) BF510 511 512 513
Input capacitance at f = 1 MHz Cis 5 5 5 5 pF
Input conductance at f = 100 MHz gis typ. 100 90 60 50 S
typ. 0.4 0.4 0.4 0.4 pF
Feedback capacitance at f = 1 MHz Crs
0.5 0.5 0.5 0.5 pF
Transfer admittance at f = 1 kHz yfs 2.5 4.0 4.0 3.5 mS
VGS = 0 instead of ID = 5 mA yfs 6.0 7.0 mS
Transfer admittance at f = 100 MHz yfs typ. 3.5 5.5 5.0 5.0 mS
Output capacitance at f = 1 MHz Cos 3 3 3 3 pF
Output conductance at f = 1 MHz gos 60 80 100 120 S
Output conductance at f = 100 MHz gos typ. 35 55 70 90 S
Noise figure at optimum source admittance
GS = 1 mS; BS = 3 mS;
f = 100 MHz F typ. 1.5 1.5 1.5 1.5 dB
MDA275
MDA276
1.5 10
handbook, halfpage
handbook, halfpage
|yfs| BF513
Crs
(mS)
(pF)
8 BF512
BF511
1
6
BF510
4
0.5
typ
2
0 0
0 4 8 12 16 20 0 5 10 15
VDS (V) ID (mA)
Fig.2 VGS = 0 for BF510 and BF511;
ID = 5 mA for BF512 and BF513;
f = 1 MHz; Tamb = 25 C. Fig.3 VDS = 10 V; f = 1 kHz; Tamb = 25 C; typical
values.
December 1997 4
NXP Semiconductors Product specification
N-channel silicon field-effect transistors BF510 to 513
MDA245
300
handbook, halfpage
Ptot
(mW)
200
100
0
0 40 80 120 160 200
Tamb (