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Philips Semiconductors Product specification

TrenchMOS transistor BUK7514-55A
Standard level FET BUK7614-55A

GENERAL DESCRIPTION QUICK REFERENCE DATA
N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT
standard level field-effect power
transistor in a plastic envelope VDS Drain-source voltage 55 V
available in TO220AB and SOT404 . ID Drain current (DC) 73 A
Using 'trench' technology which Ptot Total power dissipation 149 W
features very low on-state Tj Junction temperature 175