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STP19NB20 - STP19NB20FP
STB19NB20-1
N-CHANNEL 200V - 0.15 - 19A - TO-220/TO-220FP/I2PAK
PowerMESHTM MOSFET
TYPE VDSS RDS(on) ID
STP19NB20 200 V < 0.18 19 A
STP19NB20FP 200 V < 0.18 10 A
STB19NB20-1 200 V < 0.18 19 A
s TYPICAL RDS(on) = 0.15 3
2
s EXTREMELY HIGH dv/dt CAPABILITY 1
s 100% AVALANCHE TESTED TO-220 TO-220FP
s NEW HIGH VOLTAGE BENCHMARK
s)
s GATE CHARGE MINIMIZED
3
t(
12
DESCRIPTION 2
I PAK
uc
Using the latest high voltage MESH OVERLAYTM (Tabless TO-220)
process, STMicroelectronics has designed an ad-
d
ro
vanced family of power MOSFETs with outstanding
performances. The new patent pending strip layout INTERNAL SCHEMATIC DIAGRAM
coupled with the Company's proprieraty edge termi-
P
te
nation structure, gives the lowest RDS(on) per area,
exceptional avalanche and dv/dt capabilities and
unrivalled gate charge and switching characteris-
le
so
tics.
Ob
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s SWITH MODE POWER SUPPLIES (SMPS)
-
(s)
s DC-AC CONVERTERS FOR TELECOM,
ct
INDUSTRIAL AND CONSUMER
ENVIRONMENT
ABSOLUTE MAXIMUM RATINGS
o du
Pr
Symbol Parameter Value Unit
STP(B)19NB20(-1) STP19NB20FP
e
let
VDS Drain-source Voltage (VGS = 0) 200 V
VDGR Drain-gate Voltage (RGS = 20 k) 200 V
o
bs
VGS Gate- source Voltage