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STF34NM60N
STP34NM60N, STW34NM60N
N-channel 600 V, 0.092 29 A MDmeshTM II Power MOSFET
,
TO-220, TO-247, TO-220FP
Preliminary data

Features
RDS(on)
Type VDSS ID PTOT
max.
3 3
STF34NM60N 600 V 0.105 29 A 40 W 1
2
1
2

STP34NM60N 600 V 0.105 29 A 210 W TO-247 TO-220
STW34NM60N 600 V 0.105 29 A 210 W

100% avalanche tested
3
Low input capacitance and gate charge 2
1
Low gate input resistance TO-220FP

Application
Switching applications

Description Figure 1. Internal schematic diagram

These devices are made using the second
generation of MDmeshTM technology. This
revolutionary Power MOSFET associates a new
vertical structure to the company's strip layout to
yield one of the world's lowest on-resistance and
gate charge. It is therefore suitable for the most
demanding high efficiency converters.

Table 1. Device summary
Order codes Marking Package Packaging

STF34NM60N TO-220FP
STP34NM60N 34NM60N TO-220 Tube
STW34NM60N TO-247

September 2010 Doc ID 17740 Rev 2 1/12
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to www.st.com 12
change without notice.
Contents STF34NM60N, STP34NM60N, STW34NM60N

Contents

1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4

3 Test circuits .............................................. 6

4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7

5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11

2/12 Doc ID 17740 Rev 2
STF34NM60N, STP34NM60N, STW34NM60N Electrical ratings

1 Electrical ratings

Table 2. Absolute maximum ratings
Value
Symbol Parameter Unit
TO-220, TO-247 TO-220FP

VDS Drain-source voltage (VGS = 0) 600 V
VGS Gate- source voltage