Text preview for : php110nq08t_phb110nq08t.pdf part of Philips php110nq08t phb110nq08t . Electronic Components Datasheets Active components Transistors Philips php110nq08t_phb110nq08t.pdf



Back to : php110nq08t_phb110nq08t.p | Home

PHP/PHB110NQ08T
N-channel TrenchMOSTM standard level FET
Rev. 01 -- 29 March 2004 Product data



1. Product profile

1.1 Description
N-channel enhancement mode field-effect power transistor in a plastic package using
TrenchMOSTM technology.

1.2 Features
s Standard level threshold s Very low on-state resistance.


1.3 Applications
s Motors, lamps, solenoids s Uninterruptible power supplies
s DC-to-DC converters s General industrial applications.


1.4 Quick reference data
s VDS 75 V s ID 75 A
s Ptot 230 W s RDSon 9 m.


2. Pinning information
Table 1: Pinning - SOT78 (TO-220AB) and SOT404 (D2-PAK), simplified outline and symbol
Pin Description Simplified outline Symbol
1 gate (g)
mb mb d
2 drain (d) [1]

3 source (s)
mb mounting base; g
connected to
drain (d) MBB076 s

2
1 3 MBK116
MBK106
1 2 3

SOT78 (TO-220AB) SOT404 (D2-PAK)

[1] It is not possible to make connection to pin 2 of the SOT404 package.
Philips Semiconductors PHP/PHB110NQ08T
N-channel TrenchMOSTM standard level FET


3. Ordering information
Table 2: Ordering information
Type number Package
Name Description Version
PHP110NQ08T TO-220AB Plastic single-ended package; heatsink mounted; 1 mounting hole; 3 leads SOT78
PHB110NQ08T D2-PAK Plastic single-ended surface mounted package; 3 leads (1 lead cropped) SOT404


4. Limiting values
Table 3: Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
VDS drain-source voltage (DC) 25