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INTEGRATED CIRCUITS

DATA SHEET

TDA1562Q; TDA1562ST; TDA1562SD 70 W high efficiency power amplifier with diagnostic facility
Preliminary specification Supersedes data of 1998 Apr 07 2003 Feb 12

Philips Semiconductors

Preliminary specification

70 W high efficiency power amplifier with diagnostic facility
FEATURES · Very high output power, operating from a single low supply voltage · Low power dissipation, when used for music signals · Switches to low output power at too high case temperatures · Few external components · Fixed gain · Differential inputs with high common mode rejection · Mode select pin (on, mute and standby) · Status I/O pin (class-H, class-B and fast mute) · All switching levels with hysteresis · Diagnostic pin with information about: Dynamic Distortion Detector (DDD) Any short-circuit at outputs Open load detector Temperature protection. · No switch-on or switch-off plops

TDA1562Q; TDA1562ST; TDA1562SD

· Fast mute on supply voltage drops · Quick start option (e.g. car-telephony/navigation) · Low (delta) offset voltage at the outputs · Load dump protection · Short-circuit safe to ground, supply voltage and across the load · Low power dissipation in any short-circuit condition · Protected against electrostatic discharge · Thermally protected · Flexible leads. GENERAL DESCRIPTION The TDA1562 is a monolithic integrated 70 W/4 Bridge-Tied Load (BTL) class-H high efficiency power amplifier in a 17 lead DIL-bent-SIL plastic power package. The device can be used for car audio systems (e.g. car radios and boosters) as well as mains fed applications (e.g. midi/mini audio combinations and TV sound).

QUICK REFERENCE DATA VP = 14.4 V; RL = 4 ; Rs = 0 ; f = 1 kHz; Tamb = 25 °C; unless otherwise specified. SYMBOL VP PARAMETER supply voltage CONDITIONS operating; note 1 non-operating load dump Iq Istb VOO VOO Gv Zi(dif) Po THD quiescent current standby current output offset voltage delta output offset voltage voltage gain differential input impedance output power total harmonic distortion THD = 0.5% THD = 10% Po = 1 W Po = 20 W DDD active on and mute; RL = open circuit standby on and mute on mute 8 - - - - - - 25 90 45 60 - - - MIN. - - 110 3 - - 26 150 55 70 0.03 0.06 2.1 TYP. 14.4 MAX. 18 30 45 150 50 100 30 27 - - - - - - V V V mA µA mV mV dB k W W % % % UNIT

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Philips Semiconductors

Preliminary specification

70 W high efficiency power amplifier with diagnostic facility
SYMBOL SVRR CMRR ISRR Vn(o) Note PARAMETER supply voltage ripple rejection common mode rejection ratio input signal rejection ratio noise output voltage on mute on CONDITIONS on and mute

TDA1562Q; TDA1562ST; TDA1562SD
MIN. 55 56 80 - TYP. 63 80 100 100 - - - 150 MAX. UNIT dB dB dB µV

1. When operating at VP > 16 V, the output power must be limited to 85 W at THD = 10% (or minimum load is 6 ). ORDERING INFORMATION PACKAGE TYPE NUMBER NAME TDA1562Q TDA1562Q/S10 TDA1562ST TDA1562SD DBS17P DBS17P RDBS17P RDBS17P DESCRIPTION plastic DIL-bent-SIL power package; 17 leads (lead length 12 mm) plastic DIL-bent-SIL power package; 17 leads (lead length 7.7 mm) plastic rectangular-DIL-bent-SIL power package; 17 leads (row spacing 2.54 mm) plastic rectangular-DIL-bent-SIL (reverse bent) power package; 17 leads (row spacing 2.54 mm) VERSION SOT243-1 SOT243-3 SOT577-2 SOT668-2

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Philips Semiconductors

Preliminary specification

70 W high efficiency power amplifier with diagnostic facility
BLOCK DIAGRAM

TDA1562Q; TDA1562ST; TDA1562SD

handbook, full pagewidth

C1- 3 CLASS-B CLASS-H FAST MUTE STANDBY MUTE ON

C1+ 5

VP1 9

VP2 10

STAT

16

TEMPERATURE SENSOR

LOAD DUMP PROTECTION

MODE

4

disable LIFT-SUPPLY

CURRENT PROTECTION

VP* IN+ 1 + PREAMP - POWERSTAGE

TDA1562
7 DIAGNOSTIC INTERFACE OUT+

75 k

FEEDBACK CIRCUIT 75 k IN- 2

LOAD DETECTOR

DYNAMIC DISTORTION DETECTOR

8

DIAG

- PREAMP +

POWERSTAGE VP* LIFT-SUPPLY TEMPERATURE PROTECTION

11

OUT-

Vref

14 15 k 17 reference voltage disable

SGND

MGL264

15 C2-

13 C2+

6 PGND1

12 PGND2

Fig.1 Block diagram.

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Philips Semiconductors

Preliminary specification

70 W high efficiency power amplifier with diagnostic facility
PINNING SYMBOL IN+ IN- C1- MODE C1+ PGND1 OUT+ DIAG VP1 VP2 OUT- PGND2 C2+ Vref C2- STAT SGND PIN 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 DESCRIPTION signal input (positive) signal input (negative) negative terminal of lift electrolytic capacitor 1 mode select input positive terminal of lift electrolytic capacitor 1 power ground 1 positive output diagnostic output (open-collector) supply voltage 1 supply voltage 2 negative output power ground 2 positive terminal of lift electrolytic capacitor 2 internal reference voltage negative terminal of lift electrolytic capacitor 2 status I/O signal ground
handbook, halfpage

TDA1562Q; TDA1562ST; TDA1562SD

IN+ 1 IN- 2 C1- 3 MODE 4 C1+ 5 PGND1 6 OUT+ 7 DIAG 8

TDA1562Q TDA1562ST VP2 10 TDA1562SD
VP1 9 OUT- 11 PGND2 12 C2+ 13 Vref 14 C2- 15 STAT 16 SGND 17
MGL263

Fig.2 Pin configuration.

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Philips Semiconductors

Preliminary specification

70 W high efficiency power amplifier with diagnostic facility
FUNCTIONAL DESCRIPTION The TDA1562 contains a mono class-H BTL output power amplifier. At low output power, up to 18 W, the device operates as a normal BTL amplifier. When a larger output voltage swing is required, the internal supply voltage is lifted by means of the external electrolytic capacitors. Due to this momentarily higher supply voltage the obtainable output power is 70 W. In normal use, when the output is driven with music-like signals, the high output power is only needed during a small percentage of time. Under the assumption that a music signal has a normal (Gaussian) amplitude distribution, the reduction in dissipation is about 50% when compared to a class-B output amplifier with the same output power. The heatsink should be designed for use with music signals. If the case temperature exceeds 120 °C the device will switch back from class-H to class-B operation. The high power supply voltage is then disabled and the output power is limited to 20 W. When the supply voltage drops below the minimum operating level, the amplifier will be muted immediately. Mode select input (pin MODE) This pin has 3 modes: 1. LOW for standby: the complete circuit is switched off, the supply current is very low 2. MID for mute: the circuit is switched on, but the input signal is suppressed 3. HIGH for on: normal operation, the input signal is amplified by 26 dB. When the circuit is switched from mute to on or vice versa the actual switching takes place at a zero crossing of the input signal. The circuit contains a quick start option, i.e. when it is switched directly from standby to on, the amplifier is fully operational within 50 ms (important for applications like car telephony and car navigation).

TDA1562Q; TDA1562ST; TDA1562SD
Status I/O (pin STAT) INPUT This input has 3 possibilities: 1. LOW for fast mute: the circuit remains switched on, but the input signal is suppressed 2. MID for class-B: the circuit operates as class-B amplifier, the high power supply voltage is disabled, independent of the case temperature 3. HIGH for class-H: the circuit operates as class-H amplifier, the high power supply voltage is enabled, independent of the case temperature. When the circuit is switched from fast mute to class-B/H or vice versa the switching is immediately carried out. When the circuit is switched from class-B to class-H or vice versa the actual switching takes place at a zero crossing of the input signal. OUTPUT This output has 3 possibilities: 1. LOW for mute: acknowledge of muted amplifier 2. MID for class-B: the circuit operates as class-B amplifier, the high power supply voltage is disabled, caused by the case temperature Tc > 120 °C 3. HIGH for class-H: the circuit operates as class-H amplifier, the high power supply voltage is enabled, because the case temperature Tc < 120 °C. When the circuit is switched from class-B to class-H or vice versa the actual switching takes place at a zero crossing of the input signal. The status I/O pins of maximum 8 devices may be tied together for synchronizing purposes.

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Philips Semiconductors

Preliminary specification

70 W high efficiency power amplifier with diagnostic facility

TDA1562Q; TDA1562ST; TDA1562SD

handbook, full pagewidth

on mute 0 HIGH

supply voltage

mode select input

MID LOW Vref

reference voltage

VRT 0 HIGH

status I/O input

MID LOW HIGH

status I/O output

MID LOW

class-H (Tc < 120 °C) class-B (Tc > 120 °C)

output voltage across load

0

quick start mute

zero crossing change class-B/H operation

fast mute function

zero crossing mute function

supply mute function
MGL272

Fig.3 Switching characteristics.

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Philips Semiconductors

Preliminary specification

70 W high efficiency power amplifier with diagnostic facility
Diagnostic output (pin DIAG) DYNAMIC DISTORTION DETECTOR (DDD) At the onset of clipping of the output stages, the DDD becomes active. This information can be used to drive a sound processor or DC-volume control to attenuate the input signal and so limit the distortion. SHORT-CIRCUIT PROTECTION When a short-circuit occurs at the outputs to ground or to the supply voltage, the output stages are switched off. They will be switched on again approximately 20 ms after removing the short-circuit. During this short-circuit condition the diagnostic output is continuously LOW. When a short-circuit occurs across the load, the output stages are switched off during approximately 20 ms. After that time is checked during approximately 50 µs whether the short-circuit is still present. During this short-circuit condition the diagnostic output is LOW for 20 ms and HIGH for 50 µs. The power dissipation in any short-circuit condition is very low.

TDA1562Q; TDA1562ST; TDA1562SD
TEMPERATURE DETECTION Just before the temperature protection becomes active the diagnostic output becomes continuously LOW. LOAD DETECTION Directly after the circuit is switched from standby to mute or on, a built-in detection circuit checks whether a load is present. The results of this check can be detected at the diagnostic output, by switching the mode select input in the mute mode. Since the diagnostic output is an open-collector output, more devices can be connected.

HIGH
handbook, full pagewidth

mode select input

MID

LOW

output voltage across load

0

HIGH

diagnostic output no load LOW t clipping signal short-circuit to supply or ground short-circuit across load
MGL265

Fig.4 Diagnostic information.

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Philips Semiconductors

Preliminary specification

70 W high efficiency power amplifier with diagnostic facility

TDA1562Q; TDA1562ST; TDA1562SD

handbook, full pagewidth

class-H

status I/O: high

maximum output voltage swing

class-B

status I/O: open

0 HIGH

diagnostic output

LOW

HIGH

status I/O output

MID

LOW 100

120

145

150 Tj (°C)

160
MGL266

Fig.5 Behaviour as a function of temperature.

LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VP PARAMETER supply voltage CONDITIONS operating; note 1 non-operating load dump; tr > 2.5 ms; t = 50 ms IOSM IORM Vsc Tstg Tamb Tj Ptot Notes 1. When operating at VP > 16 V, the output power must be limited to 85 W at THD = 10% (or minimum load is 6 ). 2. Tj is a theoretical temperature which is based on a simplified representation of the thermal behaviour of the device. Tj = Tc + P × Rth(j-c), where Rth(j-c) is a fixed value to be used for the calculation of Tj. The rating for Tj limits the allowable combinations of power dissipation P and case temperature Tc (in accordance with IEC 60747-1). non-repetitive peak output current repetitive peak output current short-circuit safe voltage storage temperature ambient temperature junction temperature total power dissipation note 2 - - - - - - -55 -40 - - MIN. MAX. 18 30 45 10 8 18 +150 - 150 60 V V V A A V °C °C °C W UNIT

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Philips Semiconductors

Preliminary specification

70 W high efficiency power amplifier with diagnostic facility
QUALITY SPECIFICATION

TDA1562Q; TDA1562ST; TDA1562SD

Quality in accordance with "SNW-FQ-611D", if this type is used as an audio amplifier. THERMAL CHARACTERISTICS SYMBOL Rth(j-c) Rth(j-a) PARAMETER thermal resistance from junction to case thermal resistance from junction to ambient in free air CONDITIONS VALUE 1.5 40 UNIT K/W K/W

DC CHARACTERISTICS VP = 14.4 V; RL = 4 ; Tamb = 25 °C; measurements in accordance with Fig.9; unless otherwise specified. SYMBOL Supplies VP1 and VP2 VP VP(th+) VP(th-) VP(H1) Iq Istb VO VOO VOO VI II Vth1+ Vth1- VmsH1 Vth2+ Vth2- VmsH2 supply voltage supply threshold voltage supply threshold voltage hysteresis (Vth+ - Vth-) quiescent current standby current on and mute; RL = open circuit standby mute on on mute 8 7 7 - - - - - - 0 VMODE = 14.4 V standby mute mute standby mute on on mute - 1 0.9 - 3.3 3.3 - 14.4 - - 200 110 3 18 9 9 - 150 50 - 100 30 V V V mV mA µA V mV mV PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

Amplifier outputs OUT+ and OUT- output voltage output offset voltage delta output offset voltage on and mute on and mute on mute 6.5 - - - 15 - - 200 - - 200

Mode select input MODE input voltage input current threshold voltage 1+ threshold voltage 1- hysteresis (Vth1+ - Vth1-) threshold voltage 2+ threshold voltage 2- hysteresis (Vth2+ - Vth2-) VP 20 2.2 2 - 4.2 4 - V µA V V mV V V mV

Status I/O STAT PIN STAT AS INPUT Vst Ist(H) Ist(L) Vth1+ Vth1- VstH1 input voltage HIGH-level input current LOW-level input current threshold voltage 1+ threshold voltage 1- hysteresis (Vth1+ - Vth1-) VSTAT = 14.4 V VSTAT = 0 V 0 - - - 3.5 -350 - - 200 VP 4.5 -400 2 - - V mA µA V V mV

fast mute class-B - class-B fast mute 1 -

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Philips Semiconductors

Preliminary specification

70 W high efficiency power amplifier with diagnostic facility
SYMBOL Vth2+ Vth2- VstH2 Ist(mute) Vst(mute) Ist(clB) Vst(clB) Ist(clH) Vst(clH) Tc(th) VDIAG RL Tj(th) PARAMETER threshold voltage 2+ threshold voltage 2- hysteresis (Vth2+ - Vth1-) mute acknowledge sink current mute acknowledge output voltage class-B operation output current class-B operation output voltage class-H operation source current class-H operation output voltage threshold case temperature sensor Ist = -140 µA Ist = 15 µA Ist = 2.2 mA CONDITIONS class-B class-H class-H class-B

TDA1562Q; TDA1562ST; TDA1562SD
MIN. - 3.3 - 2.2 - 15 2.0 -140 - active LOW - 100 - - - 200 - - - - - 120 - - 145 TYP. - - - 0.5 - 3.0 - - - 0.6 - - MAX. 4.2 V V mV UNIT

PIN STAT AS OUTPUT mA V µA V µA V °C V °C

VP - 2.5 -

Diagnostic output DIAG output voltage load resistance for open load detection threshold junction temperature sensor

handbook, full pagewidth

on

fast mute VPH1 Vth- Vth+ VP
MGL267

Fig.6 Supply voltage transfer characteristic.

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Philips Semiconductors

Preliminary specification

70 W high efficiency power amplifier with diagnostic facility

TDA1562Q; TDA1562ST; TDA1562SD

handbook, full pagewidth

on

mute

standby VmsH1 Vth1- Vth1+ VmsH2 Vth2- Vth2+
MGL268

Vms

Fig.7 Mode select transfer characteristic.

handbook, full pagewidth

class-H

class-B

fast mute VstH1 Vth1- Vth1+ VstH2 Vth2- Vth2+
MGL269

Vst

Fig.8 Status I/O transfer characteristic.

2003 Feb 12

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Philips Semiconductors

Preliminary specification

70 W high efficiency power amplifier with diagnostic facility

TDA1562Q; TDA1562ST; TDA1562SD

AC CHARACTERISTICS VP = 14.4 V; RL = 4 ; Rs = 0 ; f = 1 kHz; Tamb = 25 °C; measurements in accordance with Fig.9; unless otherwise specified. SYMBOL Po PARAMETER output power CONDITIONS class-B; THD = 10% class-H; THD = 10% class-H; THD = 0.5% fro(h)(P) THD high frequency power roll-off Po (-1 dB); THD = 0.5%; note 1 total harmonic distortion Po = 1 W Po = 20 W DDD active Gv fro(h)(G) Zi(dif) SVRR CMRR ISRR Vn(o) voltage gain high frequency gain roll-off differential input impedance supply voltage ripple rejection common mode rejection ratio input signal rejection ratio noise output voltage on and mute; note 3 standby; note 3 on; note 4 mute; note 5 on; note 6 mute; notes 6 and 7 Notes 1. The low frequency power roll-off is determined by the value of the electrolytic lift capacitors. 2. The low frequency gain roll-off is determined by the value of the input coupling capacitors. 3. Supply voltage ripple rejection is measured across RL; ripple voltage Vripple(max) = 2 V (p-p). 4. Common mode rejection ratio is measured across RL; common mode voltage Vcm(max) = 2 V (p-p). CMMR (dB) = differential gain (Gv) + common mode attenuation (cm). Test set-up according to Fig.10; mismatch of input coupling capacitors excluded. 5. Input signal rejection ratio is measured across RL; input voltage Vi(max) = 2 V (p-p). ISSR (dB) = different gain (Gv) + mute attenuation (m). 6. Noise output voltage is measured in a bandwidth of 20 Hz to 20 kHz. 7. Noise output voltage is independent of source impedance Rs. Gv (-1 dB); note 2 16 60 45 - - - - 25 20 90 55 - 56 80 - - MIN. 19 70 55 20 0.03 0.06 2.1 26 - 150 63 90 80 100 100 60 TYP. - - - - - - - 27 - 210 - - - - 150 - MAX. W W W kHz % % % dB kHz k dB dB dB dB µV µV UNIT

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Philips Semiconductors

Preliminary specification

70 W high efficiency power amplifier with diagnostic facility
TEST AND APPLICATION INFORMATION

TDA1562Q; TDA1562ST; TDA1562SD

4700 µF C1- 3 CLASS-B CLASS-H FAST MUTE STANDBY MUTE ON C1+ 5 VP1 9

100 nF VP2 10

2200 µF

+ VP

STAT

16

TEMPERATURE SENSOR

LOAD DUMP PROTECTION

MODE

4

disable LIFT-SUPPLY

CURRENT PROTECTION

100 nF

VP* 1 IN+ + PREAMP - POWERSTAGE

TDA1562
7 OUT+ DIAGNOSTIC INTERFACE + VP RL = 4

1/2*Rs audio source 1/2*Rs 100 nF 2 IN- 10 µF 14 Vref

75 k

FEEDBACK CIRCUIT 75 k

LOAD DETECTOR

DYNAMIC DISTORTION DETECTOR

10 k 8 DIAG 11 OUT-

- PREAMP +

POWERSTAGE VP* LIFT-SUPPLY TEMPERATURE PROTECTION

15 k 17 SGND reference voltage

disable

15 C2-
handbook, full pagewidth

13 C2+ PGND1

6

12 PGND2 GND
MGL271

4700 µF

Fig.9 Test and application circuit.

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Philips Semiconductors

Preliminary specification

70 W high efficiency power amplifier with diagnostic facility

TDA1562Q; TDA1562ST; TDA1562SD

handbook, full pagewidth

+ VP 9 Ci supply 1 7 10

Ci VCM

TDA1562
2 14 SGND 17 PGND1 PGND2 6 12 11

RL

GND
MGL270

Fig.10 CMRR test set-up.

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Philips Semiconductors

Preliminary specification

70 W high efficiency power amplifier with diagnostic facility
PACKAGE OUTLINES

TDA1562Q; TDA1562ST; TDA1562SD

DBS17P: plastic DIL-bent-SIL power package; 17 leads (lead length 12 mm)

SOT243-1

non-concave D x Dh

Eh

view B: mounting base side

d

A2

B j E A

L3

L

Q c v M

1 Z e e1 bp w M

17 m e2

0

5 scale

10 mm

DIMENSIONS (mm are the original dimensions) UNIT mm A 17.0 15.5 A2 4.6 4.4 bp 0.75 0.60 c 0.48 0.38 D (1) 24.0 23.6 d 20.0 19.6 Dh 10 E (1) 12.2 11.8 e 2.54 e1 e2 Eh 6 j 3.4 3.1 L 12.4 11.0 L3 2.4 1.6 m 4.3 Q 2.1 1.8 v 0.8 w 0.4 x 0.03 Z (1) 2.00 1.45

1.27 5.08

Note 1. Plastic or metal protrusions of 0.25 mm maximum per side are not included. OUTLINE VERSION SOT243-1 REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION

ISSUE DATE 97-12-16 99-12-17

2003 Feb 12

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Philips Semiconductors

Preliminary specification

70 W high efficiency power amplifier with diagnostic facility

TDA1562Q; TDA1562ST; TDA1562SD

RDBS17P: plastic rectangular-DIL-bent-SIL power package; 17 leads (row spacing 2.54 mm)

SOT577-2

non-concave D x Dh

Eh

view B: mounting base side

d

A2

B j E

A L e2 c Q

1 Z e e1 bp

17 w M

v M

L1

0

5 scale

10 mm

DIMENSIONS (mm are the original dimensions) UNIT mm A 13.5 A2 4.6 4.4 bp 0.75 0.60 c 0.48 0.38 D(1) 24.0 23.6 d 20.0 19.6 Dh 10 E(1) 12.2 11.8 e 2.54 e1 1.27 e2 2.54 Eh 6 j 3.4 3.1 L 3.75 3.15 L1 3.75 3.15 Q 2.1 1.8 v 0.6 w 0.4 x 0.03 Z(1) 2.00 1.45

Note 1. Plastic or metal protrusions of 0.25 mm maximum per side are not included. OUTLINE VERSION SOT577-2 REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION

ISSUE DATE 01-01-05

2003 Feb 12

17

Philips Semiconductors

Preliminary specification

70 W high efficiency power amplifier with diagnostic facility

TDA1562Q; TDA1562ST; TDA1562SD

RDBS17P: plastic rectangular-DIL-bent-SIL power package; 17 leads (row spacing 2.54 mm)

SOT577-2

non-concave D x Dh

Eh

view B: mounting base side

d

A2

B j E

A L e2 c Q

1 Z e e1 bp

17 w M

v M

L1

0

5 scale

10 mm

DIMENSIONS (mm are the original dimensions) UNIT mm A 13.5 A2 4.6 4.4 bp 0.75 0.60 c 0.48 0.38 D(1) 24.0 23.6 d 20.0 19.6 Dh 10 E(1) 12.2 11.8 e 2.54 e1 1.27 e2 2.54 Eh 6 j 3.4 3.1 L 3.75 3.15 L1 3.75 3.15 Q 2.1 1.8 v 0.6 w 0.4 x 0.03 Z(1) 2.00 1.45

Note 1. Plastic or metal protrusions of 0.25 mm maximum per side are not included. OUTLINE VERSION SOT577-2 REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION

ISSUE DATE 01-01-05

2003 Feb 12

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Philips Semiconductors

Preliminary specification

70 W high efficiency power amplifier with diagnostic facility

TDA1562Q; TDA1562ST; TDA1562SD

RDBS17P: plastic rectangular-DIL-bent-SIL (reverse bent) power package; 17 leads (row spacing 2.54 mm)

SOT668-2

non-concave x Dh

D

Eh

view B: mounting base side

d

A2

B j E

A Q L c 1 Z e e1 bp 17 w M L1 e2

v M

0

5 scale

10 mm

DIMENSIONS (mm are the original dimensions) UNIT mm A 13.5 A2 4.6 4.4 bp 0.75 0.60 c 0.48 0.38 D (1) 24.0 23.6 d 20.0 19.6 Dh 10 E (1) 12.2 11.8 e 2.54 e1 1.27 e2 2.54 Eh 6 j 3.4 3.1 L 3.75 3.15 L1 3.75 3.15 Q 2.1 1.9 v 0.6 w 0.4 x 0.03 Z (1) 2.00 1.45

Note 1. Plastic or metal protrusions of 0.25 mm maximum per side are not included. OUTLINE VERSION SOT668-2 REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION

ISSUE DATE 01-01-05

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Philips Semiconductors

Preliminary specification

70 W high efficiency power amplifier with diagnostic facility
SOLDERING Introduction to soldering through-hole mount packages This text gives a brief insight to wave, dip and manual soldering. A more in-depth account of soldering ICs can be found in our "Data Handbook IC26; Integrated Circuit Packages" (document order number 9398 652 90011). Wave soldering is the preferred method for mounting of through-hole mount IC packages on a printed-circuit board. Soldering by dipping or by solder wave The maximum permissible temperature of the solder is 260 °C; solder at this temperature must not be in contact with the joints for more than 5 seconds.

TDA1562Q; TDA1562ST; TDA1562SD
The total contact time of successive solder waves must not exceed 5 seconds. The device may be mounted up to the seating plane, but the temperature of the plastic body must not exceed the specified maximum storage temperature (Tstg(max)). If the printed-circuit board has been pre-heated, forced cooling may be necessary immediately after soldering to keep the temperature within the permissible limit. Manual soldering Apply the soldering iron (24 V or less) to the lead(s) of the package, either below the seating plane or not more than 2 mm above it. If the temperature of the soldering iron bit is less than 300 °C it may remain in contact for up to 10 seconds. If the bit temperature is between 300 and 400 °C, contact may be up to 5 seconds.

Suitability of through-hole mount IC packages for dipping and wave soldering methods SOLDERING METHOD PACKAGE DIPPING DBS, DIP, HDIP, SDIP, SIL Note 1. For SDIP packages, the longitudinal axis must be parallel to the transport direction of the printed-circuit board. suitable suitable(1) WAVE

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Philips Semiconductors

Preliminary specification

70 W high efficiency power amplifier with diagnostic facility
DATA SHEET STATUS LEVEL I DATA SHEET STATUS(1) Objective data PRODUCT STATUS(2)(3) Development

TDA1562Q; TDA1562ST; TDA1562SD

DEFINITION This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN).

II

Preliminary data Qualification

III

Product data

Production

Notes 1. Please consult the most recently issued data sheet before initiating or completing a design. 2. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. 3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status. DEFINITIONS Short-form specification The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values definition Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. DISCLAIMERS Life support applications These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Right to make changes Philips Semiconductors reserves the right to make changes in the products including circuits, standard cells, and/or software described or contained herein in order to improve design and/or performance. When the product is in full production (status `Production'), relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified.

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Philips Semiconductors

Preliminary specification

70 W high efficiency power amplifier with diagnostic facility
NOTES

TDA1562Q; TDA1562ST; TDA1562SD

2003 Feb 12

22

Philips Semiconductors

Preliminary specification

70 W high efficiency power amplifier with diagnostic facility
NOTES

TDA1562Q; TDA1562ST; TDA1562SD

2003 Feb 12

23

Philips Semiconductors a worldwide company

Contact information For additional information please visit http://www.semiconductors.philips.com. Fax: +31 40 27 24825 For sales offices addresses send e-mail to: [email protected].

© Koninklijke Philips Electronics N.V. 2003

SCA75

All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights.

Printed in The Netherlands

753503/02/pp24

Date of release: 2003

Feb 12

Document order number:

9397 750 09939