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TDA7386
4 x 40W QUAD BRIDGE CAR RADIO AMPLIFIER
HIGH OUTPUT POWER CAPABILITY: 4 x 45W/4 MAX. 4 x 40W/4 EIAJ 4 x 28W/4 @ 14.4V, 1KHz, 10% 4 x 24W/4 @ 13.2V, 1KHz, 10% LOW DISTORTION LOW OUTPUT NOISE ST-BY FUNCTION MUTE FUNCTION AUTOMUTE AT MIN. SUPPLY VOLTAGE DETECTION LOW EXTERNAL COMPONENT COUNT: INTERNALLY FIXED GAIN (26dB) NO EXTERNAL COMPENSATION NO BOOTSTRAP CAPACITORS PROTECTIONS: OUTPUT SHORT CIRCUIT TO GND, TO VS, ACROSS THE LOAD VERY INDUCTIVE LOADS OVERRATING CHIP TEMPERATURE WITH SOFT THERMAL LIMITER LOAD DUMP VOLTAGE FORTUITOUS OPEN GND BLOCK AND APPLICATION DIAGRAM
Vcc1
FLEXIWATT25 ORDERING NUMBER: TDA7386
REVERSED BATTERY ESD DESCRIPTION The TDA7386 is a new technology class AB Audio Power Amplifier in Flexiwatt 25 package designed for high end car radio applications. Thanks to the fully complementary PNP/NPN output configuration the TDA7386 allows a rail to rail output voltage swing with no need of bootstrap capacitors. The extremely reduced components count allows very compact sets.
Vcc2 470µF 100nF
ST-BY N.C. OUT1+ IN1 0.1µF OUT1PW-GND OUT2+ IN2 0.1µF OUT2PW-GND OUT3+ IN3 0.1µF OUT3PW-GND OUT4+ IN4 0.1µF AC-GND 0.47µF SVR 47µF
D99AU1018
MUTE
OUT4PW-GND TAB S-GND
November 2001
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TDA7386
ABSOLUTE MAXIMUM RATINGS
Symbol VCC VCC (DC) VCC (pk) IO Operating Supply Voltage DC Supply Voltage Peak Supply Voltage (t = 50ms) Output Peak Current: Repetitive (Duty Cycle 10% at f = 10Hz) Non Repetitive (t = 100µs) Power dissipation, (Tcase = 70°C) Junction Temperature Storage Temperature Parameter Value 18 28 50 4.5 5.5 80 150 55 to 150 Unit V V V A A W °C °C
Ptot Tj Tstg
PIN CONNECTION (Top view)
1
25
V CC
AC-GND
P-GND3
V CC
P-GND2
P-GND1
P-GND4
S-GND
OUT3-
OUT2-
OUT1-
OUT2+
OUT1+
OUT3+
THERMAL DATA
Symbol Rth j-case Parameter Thermal Resistance Junction to Case Max. Value 1 Unit °C/W
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OUT4+
D94AU159A
OUT4-
ST-BY
MUTE
HSD
SVR
TAB
IN1
IN2
IN4
IN3
TDA7386
ELECTRICAL CHARACTERISTICS (VS = 14.4V; f = 1KHz; Rg = 600; RL = 4; Tamb = 25°C; Refer to the test and application diagram, unless otherwise specified.)
Symbol Iq1 VOS dVOS Gv dGv Po Parameter Quiescent Current Output Offset Voltage During mute ON/OFF output offset voltage Voltage Gain Channel Gain Unbalance Output Power VS = 13.2V; THD = 10% VS = 13.2V; THD = 0.8% VS = 14,4V; THD = 10% VS = 13.7V VS = 14.4V Po = 4W "A" Weighted Bw = 20Hz to 20KHz f = 100Hz; Vr = 1Vrms PO = 0.5W f = 1KHz PO = 4W f = 10KHz PO = 4W VSt-By = 1.5V VSt-By = 1.5V to 3.5V (Amp: ON) (Amp: OFF) POref = 4W (Amp: Play) (Amp: Mute) (Amp: Mute) Att 80dB; POref = 4W (Amp: Play) Att < 0.1dB; PO = 0.5W VMUTE = 1.5V (Sourced Current) VMUTE = 3.5V
(*) Saturated square wave output.
Test Condition RL = Play Mode
Min.
Typ. 190
Max. 350 ±80 ±80
Unit mA mV mV dB dB W W W W W
25 22 16.5 26 37.5 43
26 24 18 28 40 45 0.04 50 70
27 ±1
Po EIAJ Po max. THD eNo SVR fch Ri CT ISB Ipin4 VSB out VSB in AM VM out VM in VAM in
EIAJ Output Power (*) Max. Output Power (*) Distortion Output Noise Supply Voltage Rejection High Cut-Off Frequency Input Impedance Cross Talk St-By Current Consumption St-by pin Current St-By Out Threshold Voltage St-By in Threshold Voltage Mute Attenuation Mute Out Threshold Voltage Mute In Threshold Voltage VS Automute Threshold
0.15 70 100
% µV µV dB KHz K
50 80 70 60
75 200 100 70 60 50 ±10
dB dB µA µA V V dB V
3.5 1.5 80 3.5 1.5 6.5 7.6 5 -5 11 8.5 20 20 90
V V V µA µA
Ipin22
Muting Pin Current
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TDA7386
Figure 1: Standard Test and Application Circuit
C8 0.1µF
C7 2200µF Vcc1-2 Vcc3-4 6 20 9 8 OUT1
R1 ST-BY 10K R2 MUTE 47K C1 IN1 0.1µF IN2 C2 0.1µF IN3 C3 0.1µF IN4 C4 0.1µF S-GND 14 13 16 C5 0.47µF SVR C6 47µF 10 15 12 11 C10 1µF C9 1µF 22 4
7
5 2 3 OUT2
17 18 19 OUT3
21 24 23 25 N.C. 1 TAB OUT4
D95AU335C
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TDA7386
Figure 2: P.C.B. and component layout of the figure 1 (1:1 scale) COMPONENTS & TOP COPPER LAYER
BOTTOM COPPER LAYER
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TDA7386
Figure 4: Quiescent Output Voltage vs. Supply Voltage
Figure 3: Quiescent Current vs. Supply Voltage
Figure 5: Output Power vs. Supply Voltage
Figure 6: Maximum Output Power vs. Supply Voltage
Figure 7: Distortion vs. Output Power
Figure 8: Distortion vs. Frequency
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TDA7386
Figure 9: Supply Voltage Rejection vs. Frequency Figure 10: Crosstalk vs. Frequency
Figure 11: Output Noise vs. Source Resistance
Figure 12: Power Dissipation & Efficiency vs. Output Power
APPLICATION HINTS (ref. to the circuit of fig. 1) SVR Besides its contribution to the ripple rejection, the SVR capacitor governs the turn ON/OFF time sequence and, consequently, plays an essential role in the pop optimization during ON/OFF transients.To conveniently serve both needs, ITS MINIMUM RECOMMENDED VALUE IS 10µF. INPUT STAGE The TDA7386's inputs are ground-compatible and can stand very high input signals (± 8Vpk) without any performances degradation. If the standard value for the input capacitors (0.1µF) is adopted, the low frequency cut-off will amount to 16 Hz. STAND-BY AND MUTING STAND-BY and MUTING facilities are both
CMOS-COMPATIBLE. If unused, a straight connection to Vs of their respective pins would be admissible. Conventional/low-power transistors can be employed to drive muting and stand-by pins in absence of true CMOS ports or microprocessors. R-C cells have always to be used in order to smooth down the transitions for preventing any audible transient noises. Since a DC current of about 10 uA normally flows out of pin 22, the maximum allowable muting-series resistance (R2) is 70K, which is sufficiently high to permit a muting capacitor reasonably small (about 1µF). If R2 is higher than recommended, the involved risk will be that the voltage at pin 22 may rise to above the 1.5 V threshold voltage and the device will consequently fail to turn OFF when the mute line is brought down. About the stand-by, the time constant to be assigned in order to obtain a virtually pop-free transition has to be slower than 2.5V/ms.
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TDA7386
DIM. A B C D E F (1) G G1 H (2) H1 H2 H3 L (2) L1 L2 (2) L3 L4 L5 M M1 N O R R1 R2 R3 R4 V V1 V2 V3 MIN. 4.45 1.80 0.75 0.37 0.80 23.75 28.90 mm TYP. 4.50 1.90 1.40 0.90 0.39 1.00 24.00 29.23 17.00 12.80 0.80 22.47 18.97 15.70 7.85 5 3.5 4.00 4.00 2.20 2 1.70 0.5 0.3 1.25 0.50 MAX. 4.65 2.00 1.05 0.42 0.57 1.20 24.25 29.30 MIN. 0.175 0.070 0.029 0.014 0.031 0.935 1.138 inch TYP. 0.177 0.074 0.055 0.035 0.015 0.040 0.945 1.150 0.669 0.503 0.031 0.884 0.747 0.618 0.309 0.197 0.138 0.157 0.157 0.086 0.079 0.067 0.02 0.12 0.049 0.019 MAX. 0.183 0.079 0.041 0.016 0.022 0.047 0.955 1.153
OUTLINE AND MECHANICAL DATA
22.07 18.57 15.50 7.70 3.70 3.60
22.87 19.37 15.90 7.95 4.30 4.40
0.869 0.731 0.610 0.303 0.145 0.142
0.904 0.762 0.626 0.313 0.169 0.173
5° (Typ.) 3° (Typ.) 20° (Typ.) 45° (Typ.)
Flexiwatt25
(1): dam-bar protusion not included (2): molding protusion included
V3 H3
O
H H1 H2 R3 R4 V1 A
L4
L2
N
R2 R L L1
L3
V1
V2 D R1 R1 E G V G1 F M B M1
R2 L5
R1
C
V
FLEX25ME
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Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics © 2001 STMicroelectronics Printed in Italy All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com
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