Text preview for : AN17823A.pdf part of NF out,replace AN 7523
Back to : AN17823A.pdf | Home
Prepared Checked Approved
Product Specifications
Ref No. Total Page Page No.
A-1 9 1
AN17823A
Silicon Monolithic Bipolar IC
Structure Appearance Application Function
SIL-9 Pin Plastic Package (Power Type with Fin) Low Frequency Amplifier BTL 4.0W x 1ch Power Amplifier with Standby Function and Volume Function
A No.
1 2 3 4 5 6 7 8
Absolute Maximum Ratings Item
Storage Temperature Operating Ambient Temperature Operating Ambient Pressure Operating Constant Acceleration Operating Shock Supply Voltage Supply Current Power Dissipation
Symbol
Tstg Topr Popr Gopr Sopr Vcc Icc PD
Ratings
-55 ~ +150 -25 ~ +70
1.013x105±0.61x105 9,810 4,900
Unit
°C °C
Pa m/s2 m/s2
Note
1 1
14.4 1.0 1.22
V A W
2
Ta=70C
Operating Supply Voltage Range
Vcc
3.5V ~ 13.5V
Note 1) The temperature of all items shall be Ta=25°C except storage temperature and operating ambient temperature. 2) At no signal input.
Eff. Date
06-MAR-2002
Eff. Date
Eff. Date
Eff. Date Semiconductor Company, Matsushita Electric Industrial Co., Ltd.
FMSC-PSDA-002-01 Rev.1
Prepared Checked Approved
Product Specifications
Ref No. Total Page Page No.
B-1 9 2
AN17823A
B Electrical Characteristics
No Item 1 2 Quiescent Circuit Current Standby Current
(Unless otherwise specified, the ambient temperature is 25°C±2·C, Vcc=8.0V, frequency=1kHz and RL=8.)
Test Symbol Cir- Conditions cuit ICQ ISTB VNO GV THD PO 1 PO 2 RR Voff Att G Vm 1 1 1 1 1 1 1 1 1 1 1 Vin=0V, Vol=0V Vin=0V, Vol=0V Rg=10k, Vol=0V Po=0.5W, Vol=1.25V Po=0.5W, Vol=1.25V THD=10%, Vol=1.25V Vcc=9V THD=10%, Vol=1.25V Rg=10k, Vol=0V Vr=0.5Vrms, fr=120Hz Rg=10k, Vol=0V Po=0.5W, Vol=0V Po=0.5W, Vol=0.6V
Limits min typ max 31 2.4 3.2 30 -250 70 20 1 0.10 33 0.10 3.0 4.0 50 0 85 60 10 0.4 35 0.5 250 -
Unit mA µA mVrms dB % W W dB mV dB dB
Note
Output Noise 3 Voltage 4 5 6 7 8 9 Voltage Gain Total Harmonic Distortion Maximum Power Output 1 Maximum Power Output 2 Ripple Rejection Ratio Output Offset Voltage
1
1
10 Volume Attenuation Ratio 11 Middle Voltage Gain
1
20.5 23.5 26.5
Note 1) For this measurement, use the BPF = 15Hz ~ 30kHz (12dB/OCT).
Eff. Date
06-MAR-2002
Eff. Date
Eff. Date
Eff. Date Semiconductor Company, Matsushita Electric Industrial Co., Ltd.
FMSC-PSDA-002-01 Rev.1
Prepared Checked Approved
Product Specifications
(Reference Data for Design)
Ref No. Total Page Page No.
B-2 9 3
AN17823A
B Electrical Characteristics
No Item 1 Standby pin current 2 Volume pin current 3 Input Impedance
(Unless otherwise specified, the ambient temperature is 25°C±2°C, Vcc=8.0V, frequency=1kHz and RL=8.)
Test Symbol Cir- Conditions cuit ISTB2 IVOL Zi 1 1 1 Vin=0V, VSTB=3V Vin=0V, Vol=0V Vin=±0.3VDC
Limits min typ max -12 24 30 25 36
Unit µA µA k
Note
Note) The above characteristics are reference values determined for IC design, but not guaranteed values for shipping inspection. If problems were to occur, counter measures will be sincerely discussed.
Eff. Date
06-MAR-2002
Eff. Date
Eff. Date
Eff. Date Semiconductor Company, Matsushita Electric Industrial Co., Ltd.
FMSC-PSDA-002-01 Rev.1
Prepared Checked Approved
Product Specifications
Ref No. Total Page Page No.
C-1 9 4
AN17823A
(Description of test circuit and test method)
Test Circuit 1
AN17823A
1
+ 470µ OUT1 8 Vcc 0V
2
3
4
10µ
+
5
270k
6
+
7
1.0µ 10k
8
9
68k 5V Stand-by Vin 0V Volume 1.25V
Note) If the standby pin is open or 0V, the IC is on standby state. The IC is in the state of volume minimum if the Volume pin is ground. The IC is in the state of volume maximum if the Volume pin is open.
Eff. Date
06-MAR-2002
Eff. Date
Eff. Date
Eff. Date Semiconductor Company, Matsushita Electric Industrial Co., Ltd.
FMSC-PSDA-002-01 Rev.1
Prepared Checked Approved
Product Specifications
Ref No. Total Page Page No.
D-1 9 5
AN17823A
Circuit Function Block Diagram
+ _
_ +
1
2
3
4
5
6
7
8
9
Vcc
Output GND
Input GND
Pin Descriptions
Pin No. Description 1 2 3 4 5 6 7 8 9 Vcc Ch Output (+) GND (Output) Ch Output (-) Standby Ch Input GND (Input) N.C Volume
Note) Do not apply voltage or current to NC pin from outside.
Eff. Date
06-MAR-2002
Eff. Date
Eff. Date
Eff. Date Semiconductor Company, Matsushita Electric Industrial Co., Ltd.
FMSC-PSDA-002-01 Rev.1
Prepared Checked Approved
Product Specifications
Ref No. Total Page Page No.
E 9 6
AN17823A
Package Name Unit : mm
F - 9S
8.4±0.25
2.65±0.1
6.3±0.3
7.1±0.25
5.8±0.25
1.2±0.25 0.5±0.1
1.5±0.25
3.75±0.25
9
3.3±0.1
8 7 6
15.0 21.6±0.3 0.44 +0.1 -0.05 1.7±0.25
19.92±0.3
18.5±0.25
5 4 3 2 1
2.54 1.7±0.25
0.15 MAX
5.6±0.25
0.7±0.25
Name of item Date Code Company insignia
Eff. Date
06-MAR-2002
Eff. Date
Eff. Date
Eff. Date Semiconductor Company, Matsushita Electric Industrial Co., Ltd.
FMSC-PSDA-002-01 Rev.1
Prepared Checked Approved
Product Specifications
Ref No. Total Page Page No.
F-1 9 7
AN17823A
SiN, Fe group, Ag plating, Solder plating, Ag paste, PSG, Cu group, Au plating, Solder dip,
(Structure Description)
Chip surface passivation Lead frame material Inner lead surface process Outer lead surface process Chip mounting method Wire bonding method Mold material Molding method Others ( Others ( Others ( Others ( ) ) ) ) ) ) ) )
1 2 , 6 2 6 3 4 5 5
Au-Si alloy, Solder, Others ( Others ( Others ( Multiplunger mold, Others (
Thermalsonic bonding, Epoxy, Transfer mold,
Package 9-SIP(F)
1 2 3 4 5 6
Eff. Date
06-MAR-2002
Eff. Date
Eff. Date
Eff. Date Semiconductor Company, Matsushita Electric Industrial Co., Ltd.
FMSC-PSDA-002-01 Rev.1
Prepared Checked Approved
Product Specifications
(Technical Data)
Ref No. Total Page Page No.
G 9 8
AN17823A
(
5000
Rth(j-c) = 12.0°C/W Rth(j-a) = 66.5°C/W
)
F-9S Package Power Dissipation PD - Ta
4706
4500
5°C/W heat sink
4000
3636 3500
10°C/W heat sink
Power Dissipation, PD (mW)
3000
20°C/W heat sink
2500
2000 1500
Without heat sink PD=1880mW(25°C)
1203
1000
Without heat sink
500 0
0
25
50
70 75
100
125
150
Ambient Temperature, Ta (°C)
Eff. Date
06-MAR-2002
Eff. Date
Eff. Date
Eff. Date Semiconductor Company, Matsushita Electric Industrial Co., Ltd.
FMSC-PSDA-002-01 Rev.1
Prepared Checked Approved
Product Specifications
Ref No. Total Page Page No.
H 9 9
AN17823A
(Precautions for use)
1) Make sure that the IC is free of any pin short-circuiting, ground short, and load shortcircuiting. 2) Ground the radiation fin so that there will be no difference in electric potential between the radiation fin and ground. 3) The thermal protection circuit operates at a Tj of approximately 150°C. The thermal protection circuit is reset automatically when the temperature drops. 4) Make sure that the heat radiation design is effective enough if the Vcc is comparatively high or the IC operates high output power. 5) Connect only ground pin for signal sources to the signal GND pin of the amplifier on the previous stage.
Eff. Date
06-MAR-2002
Eff. Date
Eff. Date
Eff. Date Semiconductor Company, Matsushita Electric Industrial Co., Ltd.
FMSC-PSDA-002-01 Rev.1