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BLL6H0514LS-130
LDMOS driver transistor
Rev. 2 -- 13 September 2010 Product data sheet
1. Product profile
1.1 General description
130 W LDMOS transistor intended for pulsed applications in the 0.5 GHz to 1.4 GHz
range.
Table 1. Application information
Typical RF performance at Tcase = 25 C; IDq = 50 mA; in a class-AB application circuit.
Mode of operation f tp VDS PL Gp RLin D Pdroop(pulse) tr tf
(MHz) (s) (%) (V) (W) (dB) (dB) (%) (dB) (ns) (ns)
pulsed RF 960 to 1215 128 10 50 130 19 10 54 0 15 8
1200 to 1400 300 10 50 |
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