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BUV42 SILICON NPN SWITCHING TRANSISTOR n SGS-THOMSON PREFERRED SALESTYPE n FAST SWITCHING TIMES n LOW SWITCHING LOSSES n VERY LOW SATURATION VOLTAGE AND HIGH GAIN FOR REDUCED LOAD OPERATION 1 2 TO-3 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symb ol Parameter Valu e Unit V CEV Collector-emitter Voltage (VBE = -1.5V) 350 V V CEO Collector-emitter Voltage (IB = 0) 250 V V EBO Emitter-Base Voltage (IC = 0) 7 V IC Collector Current 12 A I CM Collector Peak Current 18 A IB Base Current 2.5 A I BM Base Peak Current 4 A P Bas e Reverse Bias Base Dissipation 1 A (B. E. junction in avalanche) o P tot T otal Dissipation at Tc ase 25 C 120 W o T s tg Storage Temperature -65 to 200 C o Tj Max Operating Junction Temperature 200 C October 1995 1/5 BUV42 THERMAL DATA o R thj -ca se Thermal Resistance Junction-case Max 1.46 C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbo l Parameter T est Con ditio ns Min . T yp. Max. Unit I CER Collector Cut-off V CE = V CEV 0.5 mA Current (R BE = 10) V CE = V CEV Tc = 100o C 2.5 mA I CEV Collector Cut-off V CE = V CEV V BE = -1.5V 0.5 mA o Current V CE = V C