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Now downloading free:Fairchild Semiconductor fdc6304p

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Descr: . Electronic Components Datasheets Active components Transistors Fairchild Semiconductor fdc6304p.pdf
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fdc6304p.pdfJuly 1997 FDC6304P Digital FET, Dual P-Channel General Description Features These P-Channel enhancement mode field effect transistor are -25 V, -0.46 A continuous, -1.0 A Peak. produced using Fairchild's proprietary, high cell density, DMOS RDS(ON) = 1.5 @ VGS= -2.7 V technology. This very high density process is tailored to minimize RDS(ON) = 1.1 @ VGS = -4.5 V. on-state resistance at low gate drive conditions. This device is designed especially for application in battery power applications Very low level gate drive requirements allowing direct such as notebook computers and cellular phones. This device operation in 3V circuits. VGS(th) < 1.5 V. has excellent on-state resistance even at gate drive voltages as low as 2.5 volts.

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