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Now downloading free:Agilent 5991-4656EN Internal Gate Resistance Measurement Using the Agilent B1505A - Application Note c201408


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5991-4656EN Internal Gate Resistance Measurement Using the Agilent B1505A - Application Note c201408

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5991-4656EN Internal Gate Resistance Measurement Using the Agilent B1505A - Application Note c201408Keysight Technologies Internal Gate Resistance Measurement Using the B1505A Application Note Introduction Power MOSFET and IGBT internal gate resistance is an important device paramteter, since it can limit the maximum switching frequency or determine the driving loss in switching converters and inverters. For the lower totem pole transistor of the converter output, it is also important to minimize the internal gate resitance to prevent device self turn-on. Device self turn-on is caused by transient currents injected into the gate terminal of the lower totem pole transistor through capacitive coupling when the upper totem pole transistor turns on (refer to igure 1). Since this phenomena can cause device destruction, controlling internal gate resistance variations is as important as minimizing the absolute gate resistance value. Unfortunately, most data sheets only show typical values for the internal gat

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