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Search results for: 802 A (found: 23 regularSearch) ask for a document

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CD-802.pdf01-05-2005Service Manual - CD-802Audio879 kB2830RoadstarCD-802dupator
802 302B.pdf03-02-2011Bose 802, 302B, 802C Service ManualAudio869 kB3552Bose802 - 302BGhostlane
RGPA01(2.4-2.5 GHz GaAs pHEMT).pdf13-02-2008The RGPA01 is a 2.4 to 2.5 GHz high efficiency GaAs Enhancement Mode pHEMT MMIC power amplifier. This MMIC power amplifier doesn’t require any off chip components. The device is designed for 802.11b/g and WLAN MIMO system. The Power Amplifier exhibitComponents69 kB130Rficsolutions.IncRGPA01The RGPA01 is a 2.4 to 2.5 GHz high efficiencyjai_kale
DWF770XP[1].pdf17-03-2010Repairing Manual for Several Washing machines from Daewoo DWF-750/752/753/755/756/758 DWF-800/802/803/805/806/808Washing Machines2004 kB3783DaewooDWF-750/752/800/802boghu
RGPA04(4.9-5.9 GHz GaAs pHEMT).pdf13-02-2008The RGPA04 is a 4.9 to 5.9 GHz high efficiency GaAs Enhancement mode psuedomorphic high electron mobility transistor MMIC power amplifier. The device is designed for 802.11a WLAN system. The part is matched at the input and output so no additional RFComponents104 kB97Rficsolutions.IncRGPA04The RGPA04 is a 4.9 to 5.9 GHz high efficiencyjai_kale
Toshiba SD-110Ex.part11.rar23-11-200620 802 856 B, 11parts, 120 pagesDVD583 kB355ToshibaSD-110EB/EE/ELMarS2
RTDA01.pdf12-02-2008The RTDA01 is a 2.0 to 5.0 GHz; CMOS driver amplifier. The device is designed for the 802.11 a/b/g WLAN systems. The driver amplifier gives 18 dBm Pout for the frequency range 2.0 to 5.0 GHz. The input and output matching is on chip which reduces theComponents56 kB142Rficsolutions Inc.RTDA01The RTDA01 is a 2.0 to 5.0 GHz; CMOS driverjai_kale
RGLNA09(5.15-5.35 GHz GaAs pHEMT ).pdf13-02-2008The RGLNA09 is 5.15 to 5.35 GHz high efficiency GaAs Enhancement mode psuedomorphic high electron mobility transistor Low noise amplifier .The device is designed for 802.11a and WLAN MIMO system. The noise figure is 1.4 dB at 5.25 GHz. The RGLNA09 iComponents36 kB59Rficsolutions.IncRGLNA09The RGLNA09 is 5.15 to 5.35 GHz high efficiencyjai_kale
RGLNA08(2.4-2.5 GHz GaAs pHEMT).pdf13-02-2008The RGLNA08 is 2.4 to 2.5 GHz high efficiency GaAs Enhancement mode psuedomorphic high electron mobility transistor Low noise amplifier. The device is designed for 802.11b/g and WLAN MIMO system. The noise figure is 1.5 dB at 2.4 GHz and die area isComponents77 kB62Rficsolutions.IncRGLNA08The RGLNA08 is 2.4 to 2.5 GHz high efficiencyjai_kale
RGDA01(2-6 GHz GaAs pHEMT).pdf13-02-2008The RGDA01 is 2.0 to 6.0 GHz GaAs Enhancement mode psuedomorphic high electron mobility transistor Driver Amplifier. The device is designed for IEEE 802.11a/b/g, WLAN standards and Cellular system. The driver amplifier can provide upto 20 dBm power Components74 kB116Rficsolutions.IncRGDA01The RGDA01 is 2.0 to 6.0 GHz GaAs Enhancementjai_kale
RGLNA02(2-6 GHz, 3V GaAs pHEMT).pdf13-02-2008The RGLNA02 is 2.0 to 6.0 GHz high efficiency GaAs Enhancement mode psuedomorphic high electron mobility transistor Low noise amplifier. The device is designed for 802.11a/b/g and Wi-Fi systems. It gives Power Output of 5 dBm at P1 dB. The minimum noComponents59 kB63Rficsolutions.IncRGLNA02The RGLNA02 is 2.0 to 6.0 GHz high efficiencyjai_kale
RTLNA01.pdf12-02-2008The RTLNA01 is 2 to 4 GHz; Low Noise Amplifier IP Block .The device is designed for 802.11 b/g and Cellular system. The LNA has input and output matching off-chip which will provide the flexibility to tune the LNA for low noise figure. The LNA is biaComponents61 kB100Rficsolutions Inc.RTLNA01The RTLNA01 is 2 to 4 GHz; Low Noise Amplifier IPjai_kale
RJM01_1.6_3GHz_Gillbert cell Mixer_.pdf12-02-2008The RJM01 is 1.6 to 3.0 GHz; Low noise, Gilbert Cell down conversion SiGe Mixer designed on 0.35 μm SiGe BiCMOS technology. The device is designed for 802.11 b/g standard and WLAN MIMO system. Functional Diagram . The noise figure is 4.43 dB anComponents173 kB151Rficsolutions Inc.RJM01The RJM01 is 1.6 to 3.0 GHz; Low noise, Gilbertjai_kale
RS03 _2_6GHz_Single stage_LNA_.pdf12-02-2008The RS03 is 2 to 6 GHz; high efficiency Broadband Single Stage Low noise amplifier, designed on 0.35- μm SiGe BiCMOS technology. The device is designed for use in the 802.11a/b/g and WLAN MIMO system. Functional Diagram . The noise figure is 1.Components202 kB73Rficsolutions Inc.RS03The RS03 is 2 to 6 GHz; high efficiency Broadbandjai_kale
RJP05 _2.4GHz_WLAN_PA_.pdf12-02-2008The RJP05 is 2.4 GHz to 2.5 GHz; high efficiency Power stage for WLAN Power Amplifier. The Amplifier is designed using 0.18um SiGe BiCMOS process for 802.11 b/g WLAN systems. Power amplifier shows PAE of 31% at 24 dBm power with output match off-chipComponents206 kB445Rficsolutions Inc.RJP05The RJP05 is 2.4 GHz to 2.5 GHz; high efficiencyjai_kale
RGLNA01(0.7-3.0 GHz GaAs pHEMT).pdf13-02-2008The RGLNA01 is 0.7 to 3.0 GHz high efficiency GaAs Enhancement mode pHEMT Low Noise Amplifier IP Block .The device is designed for use in the IEEE 802.11b/g, PCS, PHS and Cellular system. The die area of RGLNA01 is 0.8 mm x 0.7 mm, with on chip inputComponents65 kB132Rficsolutions.IncRGLNA01The RGLNA01 is 0.7 to 3.0 GHz high efficiencyjai_kale
RGLNA11(2-6 GHz GaAs pHEMT).pdf13-02-2008The RGLNA11 is a broadband high efficiency GaAs Enhancement mode pHEMT Low Noise Amplifier. The device is designed for use in the 802.11a/b/g and WLAN MIMO system. The LNA covers a wide range of frequency from 2 to 6 GHz. The noise figure is 1.7 dB aComponents126 kB53Rficsolutions.IncRGLNA11The RGLNA11 is a broadband high efficiency GaAsjai_kale
RGLNA03(2-12 GHz GaAs pHEMT).pdf13-02-2008The RGLNA03 is 2.0 to 12.0 GHz high efficiency GaAs Enhancement mode p-HEMT Low noise amplifier .The device is designed for 802.11a/b/g standard. The minimum noise figure achieved is 1.5 dB at 2 GHz. A single 3.5V and 12 mA current bias the LNA. No inputComponents114 kB90Rficsolutions.IncRGLNA03The RGLNA03 is 2.0 to 12.0 GHz high efficiency GaAs Enhancement mode p-HEMT Low noise amplifierjai_kale
RS01_1.7_2.7GHz_ single stage LNA_.pdf12-02-2008The RS01 is 1.7 to 2.7 GHz; high efficiency Single stage Low Noise Amplifier designed on 0.18μm SiGe BiCMOS technology. The device is designed for 802.11b/g standard and WLAN MIMO system. The simulated noise figure is as low as 1.2 dB at 2.0 GHzComponents184 kB73Rficsolutions Inc.RS01The RS01 is 1.7 to 2.7 GHz; high efficiency Singlejai_kale
RGLNA06(2-6 GHz,3.3 V GaAs pHEMT).pdf13-02-2008The RGLNA06 is a broadband high efficiency GaAs Enhancement mode pHEMT Low Noise Amplifier. The MMIC Low Noise Amplifier doesn’t require any off-chip component. The Broadband LNA is designed for the 802.11a/b/g/n system. The LNA covers a wide range oComponents54 kB75Rficsolutions.IncRGLNA06The RGLNA06 is a broadband high efficiency GaAsjai_kale

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