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Search results for: The RGLNA03 is 2.0 to 12.0 GHz high efficiency GaAs Enhancement mode p-HEMT Low noise amplifier (found: 99 regularSearch) ask for a document
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The RGLNA03 is 2.0 to 12.0 GHz high efficiency GaAs Enhancement mode p-HEMT Low noise amplifier : Full Text Matches - Check >>
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RGLNA03(2-12 GHz GaAs pHEMT).pdf13/02/08The RGLNA03 is 2.0 to 12.0 GHz high efficiency GaAs Enhancement mode p-HEMT Low noise amplifier .The device is designed for 802.11a/b/g standard. The minimum noise figure achieved is 1.5 dB at 2 GHz. A single 3.5V and 12 mA current bias the LNA. No input114 kB92Rficsolutions.IncRGLNA03
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RGLNA09(5.15-5.35 GHz GaAs pHEMT ).pdf13/02/08The RGLNA09 is 5.15 to 5.35 GHz high efficiency GaAs Enhancement mode psuedomorphic high electron mobility transistor Low noise amplifier .The device is designed for 802.11a and WLAN MIMO system. The noise figure is 1.4 dB at 5.25 GHz. The RGLNA09 i36 kB61Rficsolutions.IncRGLNA09
RGLNA08(2.4-2.5 GHz GaAs pHEMT).pdf13/02/08The RGLNA08 is 2.4 to 2.5 GHz high efficiency GaAs Enhancement mode psuedomorphic high electron mobility transistor Low noise amplifier. The device is designed for 802.11b/g and WLAN MIMO system. The noise figure is 1.5 dB at 2.4 GHz and die area is77 kB64Rficsolutions.IncRGLNA08
RGLNA06(2-6 GHz,3.3 V GaAs pHEMT).pdf13/02/08The RGLNA06 is a broadband high efficiency GaAs Enhancement mode pHEMT Low Noise Amplifier. The MMIC Low Noise Amplifier doesn’t require any off-chip component. The Broadband LNA is designed for the 802.11a/b/g/n system. The LNA covers a wide range o54 kB78Rficsolutions.IncRGLNA06
RGLNA02(2-6 GHz, 3V GaAs pHEMT).pdf13/02/08The RGLNA02 is 2.0 to 6.0 GHz high efficiency GaAs Enhancement mode psuedomorphic high electron mobility transistor Low noise amplifier. The device is designed for 802.11a/b/g and Wi-Fi systems. It gives Power Output of 5 dBm at P1 dB. The minimum no59 kB65Rficsolutions.IncRGLNA02
RGLNA11(2-6 GHz GaAs pHEMT).pdf13/02/08The RGLNA11 is a broadband high efficiency GaAs Enhancement mode pHEMT Low Noise Amplifier. The device is designed for use in the 802.11a/b/g and WLAN MIMO system. The LNA covers a wide range of frequency from 2 to 6 GHz. The noise figure is 1.7 dB a126 kB55Rficsolutions.IncRGLNA11
RGPA03(3.4-3.6 GHz GaAs pHEMT).pdf13/02/08The RGPA03 is a 3.4 to 3.6 GHz high efficiency GaAs Enhancement mode psuedomorphic high electron mobility transistor MMIC Power Amplifier. It has been designed for use in the 3.5 GHz WiMax systems. The part is matched at the input and output so no additi154 kB109Rficsolutions.IncRGPA03
RGLNA01(0.7-3.0 GHz GaAs pHEMT).pdf13/02/08The RGLNA01 is 0.7 to 3.0 GHz high efficiency GaAs Enhancement mode pHEMT Low Noise Amplifier IP Block .The device is designed for use in the IEEE 802.11b/g, PCS, PHS and Cellular system. The die area of RGLNA01 is 0.8 mm x 0.7 mm, with on chip input65 kB134Rficsolutions.IncRGLNA01
RGPA04(4.9-5.9 GHz GaAs pHEMT).pdf13/02/08The RGPA04 is a 4.9 to 5.9 GHz high efficiency GaAs Enhancement mode psuedomorphic high electron mobility transistor MMIC power amplifier. The device is designed for 802.11a WLAN system. The part is matched at the input and output so no additional RF104 kB99Rficsolutions.IncRGPA04
RGPA05(1.85-1.91 GHz GaAs pHEMT ).pdf13/02/08The RGPA05 is a 1.85 to 1.91 GHz high efficiency GaAs Enhancement mode psuedomorphic high electron mobility transistor MMIC power stage. This power stage can be preceded by a Driver stage to realize a complete amplifier. It has been designed speciall118 kB126Rficsolutions.IncRGPA05
RGPA01(2.4-2.5 GHz GaAs pHEMT).pdf13/02/08The RGPA01 is a 2.4 to 2.5 GHz high efficiency GaAs Enhancement Mode pHEMT MMIC power amplifier. This MMIC power amplifier doesn’t require any off chip components. The device is designed for 802.11b/g and WLAN MIMO system. The Power Amplifier exhibit69 kB137Rficsolutions.IncRGPA01
RGDA01(2-6 GHz GaAs pHEMT).pdf13/02/08The RGDA01 is 2.0 to 6.0 GHz GaAs Enhancement mode psuedomorphic high electron mobility transistor Driver Amplifier. The device is designed for IEEE 802.11a/b/g, WLAN standards and Cellular system. The driver amplifier can provide upto 20 dBm power 74 kB122Rficsolutions.IncRGDA01
RS01_1.7_2.7GHz_ single stage LNA_.pdf12/02/08The RS01 is 1.7 to 2.7 GHz; high efficiency Single stage Low Noise Amplifier designed on 0.18μm SiGe BiCMOS technology. The device is designed for 802.11b/g standard and WLAN MIMO system. The simulated noise figure is as low as 1.2 dB at 2.0 GHz184 kB78Rficsolutions Inc.RS01
RGLNA10(7.0-26.0 GHz GaAs pHEMT).pdf13/02/08The RGLNA10 is 7.0-26.0 GHz; Low Noise Distributed Amplifiers using GaAs pHEMT Technology. The self-biased amplifier provides 19 dB of gain and 14 dBm of output power at P1 dB gain compression while requiring only 86 mA from a single 3.0 V supply. G44 kB198Rficsolutions.IncRGLNA10
RS03 _2_6GHz_Single stage_LNA_.pdf12/02/08The RS03 is 2 to 6 GHz; high efficiency Broadband Single Stage Low noise amplifier, designed on 0.35- μm SiGe BiCMOS technology. The device is designed for use in the 802.11a/b/g and WLAN MIMO system. Functional Diagram . The noise figure is 1.202 kB78Rficsolutions Inc.RS03
RGLNA03.pdf13/12/07broadband Low noise amplifier 2 GHz to 12 GHz114 kB98
RJL01_1.5_1.7GHz_GPS_LNA_.pdf12/02/08The RJL01 is 1.5 to 1.7 GHz, Low Noise Amplifier IP Block. The LNA is designed on the 0.18um SiGe BiCMOS Process. The device is designed for GPS system. The LNA has provision for mode control to turn off. It requires a single +3.0 Volt supply and con169 kB197Rficsolutions Inc.RJL01
RTV01(CATV).pdf13/02/08The RTV01 is a CATV Line Amplifier IP block. CATV Line Amplifier designed using GaAs Enhancement mode psuedomorphic high electron mobility transistor (pHEMT). The amplifier provides low distortion and noise figure along with flat gain. The part is bi185 kB967Rficsolutions.IncRTV01
RTLNA01.pdf12/02/08The RTLNA01 is 2 to 4 GHz; Low Noise Amplifier IP Block .The device is designed for 802.11 b/g and Cellular system. The LNA has input and output matching off-chip which will provide the flexibility to tune the LNA for low noise figure. The LNA is bia61 kB109Rficsolutions Inc.RTLNA01
RJP05 _2.4GHz_WLAN_PA_.pdf12/02/08The RJP05 is 2.4 GHz to 2.5 GHz; high efficiency Power stage for WLAN Power Amplifier. The Amplifier is designed using 0.18um SiGe BiCMOS process for 802.11 b/g WLAN systems. Power amplifier shows PAE of 31% at 24 dBm power with output match off-chip206 kB485Rficsolutions Inc.RJP05

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