| File | Date | Descr | Size | Popular | Mfg | Model |
| The RJM01 is 1.6 to 3.0 GHz; Low noise, Gilbert : Full Text Matches - Check >> |
| The RJM01 is 1.6 to 3.0 GHz; Low noise, Gilbert : Found in chassis2model |
| Found in: original (1) |
| RJM01_1.6_3GHz_Gillbert cell Mixer_.pdf | 12/02/08 | The RJM01 is 1.6 to 3.0 GHz; Low noise, Gilbert
Cell down conversion SiGe Mixer designed on 0.35
μm SiGe BiCMOS technology. The device is
designed for 802.11 b/g standard and WLAN MIMO
system.
Functional Diagram .
The noise figure is 4.43 dB an | 173 kB | 161 | Rficsolutions Inc. | RJM01 |
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| Found in: fulltext index (98) |
| RTLNA01.pdf | 12/02/08 | The RTLNA01 is 2 to 4 GHz; Low Noise Amplifier IP
Block .The device is designed for 802.11 b/g and
Cellular system. The LNA has input and output
matching off-chip which will provide the flexibility to
tune the LNA for low noise figure.
The LNA is bia | 61 kB | 109 | Rficsolutions Inc. | RTLNA01 |
| RJL01_1.5_1.7GHz_GPS_LNA_.pdf | 12/02/08 | The RJL01 is 1.5 to 1.7 GHz, Low Noise Amplifier
IP Block. The LNA is designed on the 0.18um SiGe
BiCMOS Process. The device is designed for GPS
system. The LNA has provision for mode control to
turn off.
It requires a single +3.0 Volt supply and con | 169 kB | 197 | Rficsolutions Inc. | RJL01 |
| RGLNA10(7.0-26.0 GHz GaAs pHEMT).pdf | 13/02/08 | The RGLNA10 is 7.0-26.0 GHz; Low Noise
Distributed Amplifiers using GaAs pHEMT
Technology. The self-biased amplifier provides 19
dB of gain and 14 dBm of output power at P1 dB
gain compression while requiring only 86 mA from a
single 3.0 V supply.
G | 44 kB | 198 | Rficsolutions.Inc | RGLNA10 |
| RGLNA03(2-12 GHz GaAs pHEMT).pdf | 13/02/08 | The RGLNA03 is 2.0 to 12.0 GHz high efficiency GaAs Enhancement mode p-HEMT Low noise amplifier .The device is designed for 802.11a/b/g standard.
The minimum noise figure achieved is 1.5 dB at 2 GHz. A single 3.5V and 12 mA current bias the LNA. No input | 114 kB | 92 | Rficsolutions.Inc | RGLNA03 |
| RGLNA06(2-6 GHz,3.3 V GaAs pHEMT).pdf | 13/02/08 | The RGLNA06 is a broadband high efficiency GaAs
Enhancement mode pHEMT Low Noise Amplifier.
The MMIC Low Noise Amplifier doesn’t require any
off-chip component. The Broadband LNA is
designed for the 802.11a/b/g/n system.
The LNA covers a wide range o | 54 kB | 78 | Rficsolutions.Inc | RGLNA06 |
| RS01_1.7_2.7GHz_ single stage LNA_.pdf | 12/02/08 | The RS01 is 1.7 to 2.7 GHz; high efficiency Single
stage Low Noise Amplifier designed on 0.18μm
SiGe BiCMOS technology. The device is designed
for 802.11b/g standard and WLAN MIMO system.
The simulated noise figure is as low as 1.2 dB at 2.0
GHz | 184 kB | 78 | Rficsolutions Inc. | RS01 |
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| RGLNA09(5.15-5.35 GHz GaAs pHEMT ).pdf | 13/02/08 | The RGLNA09 is 5.15 to 5.35 GHz high efficiency
GaAs Enhancement mode psuedomorphic high
electron mobility transistor Low noise amplifier .The
device is designed for 802.11a and WLAN MIMO
system.
The noise figure is 1.4 dB at 5.25 GHz. The
RGLNA09 i | 36 kB | 61 | Rficsolutions.Inc | RGLNA09 |
| RGLNA03.pdf | 13/12/07 | broadband Low noise amplifier
2 GHz to 12 GHz | 114 kB | 98 | | |
| RGLNA08(2.4-2.5 GHz GaAs pHEMT).pdf | 13/02/08 | The RGLNA08 is 2.4 to 2.5 GHz high efficiency
GaAs Enhancement mode psuedomorphic high
electron mobility transistor Low noise amplifier. The
device is designed for 802.11b/g and WLAN MIMO
system.
The noise figure is 1.5 dB at 2.4 GHz and die area
is | 77 kB | 64 | Rficsolutions.Inc | RGLNA08 |
| RGLNA11(2-6 GHz GaAs pHEMT).pdf | 13/02/08 | The RGLNA11 is a broadband high efficiency GaAs
Enhancement mode pHEMT Low Noise Amplifier.
The device is designed for use in the 802.11a/b/g
and WLAN MIMO system.
The LNA covers a wide range of frequency from 2 to
6 GHz. The noise figure is 1.7 dB a | 126 kB | 55 | Rficsolutions.Inc | RGLNA11 |
| RGLNA02(2-6 GHz, 3V GaAs pHEMT).pdf | 13/02/08 | The RGLNA02 is 2.0 to 6.0 GHz high efficiency
GaAs Enhancement mode psuedomorphic high
electron mobility transistor Low noise amplifier. The
device is designed for 802.11a/b/g and Wi-Fi
systems. It gives Power Output of 5 dBm at P1 dB.
The minimum no | 59 kB | 65 | Rficsolutions.Inc | RGLNA02 |
| RGDIV01.pdf | 11/02/08 | RGDIV01 is a low noise divide by 8 static divider
utilizing InGaP HBT technology. The device
operates from 7 to 20 GHz. | 162 kB | 50 | Rficsolutions Inc. | RGDIV01 |
| GEDA01.pdf | 11/02/08 | The GEDA01 is 7.0 GHz to 20.0 GHz low power
single stage buffer amplifier. The amplifier is
designed using 2 μm InGaP HBT Technology for
high frequency applications.
Driver amplifier shows gain of 4.5 dB at 20 GHz with
power output of 9 dBm. It | 48 kB | 517 | Rficsolutions Inc. | The GEDA01 is 7.0 GHz to 20.0 GHz low power |
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| GEDA02.pdf | 11/02/08 | The GEDA02 is 20 GHz to 40 GHz low power buffer
amplifier. The amplifier is designed using 2 μm
InGaP HBT process for high frequency applications.
Driver amplifier shows gain of 1dB at 40 GHz with
power output of 0dBm. It operates at 4.2Volts. | 44 kB | 276 | Rficsolutions Inc. | The GEDA02 is 20 GHz to 40 GHz low power buffer |
| RS03 _2_6GHz_Single stage_LNA_.pdf | 12/02/08 | The RS03 is 2 to 6 GHz; high efficiency Broadband
Single Stage Low noise amplifier, designed on 0.35-
μm SiGe BiCMOS technology. The device is
designed for use in the 802.11a/b/g and WLAN
MIMO system.
Functional Diagram .
The noise figure is 1. | 202 kB | 78 | Rficsolutions Inc. | RS03 |
| RGLNA01(0.7-3.0 GHz GaAs pHEMT).pdf | 13/02/08 | The RGLNA01 is 0.7 to 3.0 GHz high efficiency
GaAs Enhancement mode pHEMT Low Noise
Amplifier IP Block .The device is designed for use in
the IEEE 802.11b/g, PCS, PHS and Cellular system.
The die area of RGLNA01 is 0.8 mm x 0.7 mm, with
on chip input | 65 kB | 134 | Rficsolutions.Inc | RGLNA01 |
| RFISFR01(2.5 -2.686 GHz).pdf | 13/02/08 | The RFISFR01 is a RF front-end module that
integrates band switching and is a transceiver front
end designed for low voltage operation.
The module contains wide band power amplifier,
low noise amplifiers, band pass, low pass filters. | 56 kB | 188 | Rficsolutions.Inc | RFISFR01 |
| RJVC02.pdf | 11/02/08 | RJVC02 is 2.0 - 6.0 GHz, voltage controlled
oscillator. It can operate at 1.8 V supply and
consumes only 1.0 mA current. The tuning
bandwidth of the oscillator is 4 GHz with good
phase noise performance. | 72 kB | 50 | Rficsolutions Inc. | RJVC02 is 2.0 - 6.0 GHz, voltage controlled |
| RJVC02.pdf | 11/02/08 | RJVC02 is 2.0 - 6.0 GHz, voltage controlled
oscillator. It can operate at 1.8 V supply and
consumes only 1.0 mA current. The tuning
bandwidth of the oscillator is 4 GHz with good
phase noise performance. | 72 kB | 55 | Rficsolutions Inc. | RJVC02 is 2.0 - 6.0 GHz, voltage controlled |