| File | Date | Descr | Size | Popular | Mfg | Model |
| The RS01 is 1.7 to 2.7 GHz; high efficiency Single : Full Text Matches - Check >> |
| The RS01 is 1.7 to 2.7 GHz; high efficiency Single : Forum Matches - Check >> |
| The RS01 is 1.7 to 2.7 GHz; high efficiency Single : Found in chassis2model |
| Found in: original (1) |
| RS01_1.7_2.7GHz_ single stage LNA_.pdf | 12/02/08 | The RS01 is 1.7 to 2.7 GHz; high efficiency Single
stage Low Noise Amplifier designed on 0.18μm
SiGe BiCMOS technology. The device is designed
for 802.11b/g standard and WLAN MIMO system.
The simulated noise figure is as low as 1.2 dB at 2.0
GHz | 184 kB | 78 | Rficsolutions Inc. | RS01 |
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| Found in: fulltext index (90) |
| RGPA03(3.4-3.6 GHz GaAs pHEMT).pdf | 13/02/08 | The RGPA03 is a 3.4 to 3.6 GHz high efficiency GaAs Enhancement mode psuedomorphic high electron mobility transistor MMIC Power Amplifier. It has been designed for use in the 3.5 GHz WiMax systems.
The part is matched at the input and output so no additi | 154 kB | 109 | Rficsolutions.Inc | RGPA03 |
| RGLNA08(2.4-2.5 GHz GaAs pHEMT).pdf | 13/02/08 | The RGLNA08 is 2.4 to 2.5 GHz high efficiency
GaAs Enhancement mode psuedomorphic high
electron mobility transistor Low noise amplifier. The
device is designed for 802.11b/g and WLAN MIMO
system.
The noise figure is 1.5 dB at 2.4 GHz and die area
is | 77 kB | 64 | Rficsolutions.Inc | RGLNA08 |
| RGLNA02(2-6 GHz, 3V GaAs pHEMT).pdf | 13/02/08 | The RGLNA02 is 2.0 to 6.0 GHz high efficiency
GaAs Enhancement mode psuedomorphic high
electron mobility transistor Low noise amplifier. The
device is designed for 802.11a/b/g and Wi-Fi
systems. It gives Power Output of 5 dBm at P1 dB.
The minimum no | 59 kB | 65 | Rficsolutions.Inc | RGLNA02 |
| RGPA04(4.9-5.9 GHz GaAs pHEMT).pdf | 13/02/08 | The RGPA04 is a 4.9 to 5.9 GHz high efficiency
GaAs Enhancement mode psuedomorphic high
electron mobility transistor MMIC power amplifier.
The device is designed for 802.11a WLAN system.
The part is matched at the input and output so no
additional RF | 104 kB | 99 | Rficsolutions.Inc | RGPA04 |
| RGPA05(1.85-1.91 GHz GaAs pHEMT ).pdf | 13/02/08 | The RGPA05 is a 1.85 to 1.91 GHz high efficiency
GaAs Enhancement mode psuedomorphic high
electron mobility transistor MMIC power stage. This
power stage can be preceded by a Driver stage to
realize a complete amplifier.
It has been designed speciall | 118 kB | 126 | Rficsolutions.Inc | RGPA05 |
| RGLNA11(2-6 GHz GaAs pHEMT).pdf | 13/02/08 | The RGLNA11 is a broadband high efficiency GaAs
Enhancement mode pHEMT Low Noise Amplifier.
The device is designed for use in the 802.11a/b/g
and WLAN MIMO system.
The LNA covers a wide range of frequency from 2 to
6 GHz. The noise figure is 1.7 dB a | 126 kB | 55 | Rficsolutions.Inc | RGLNA11 |
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| RS03 _2_6GHz_Single stage_LNA_.pdf | 12/02/08 | The RS03 is 2 to 6 GHz; high efficiency Broadband
Single Stage Low noise amplifier, designed on 0.35-
μm SiGe BiCMOS technology. The device is
designed for use in the 802.11a/b/g and WLAN
MIMO system.
Functional Diagram .
The noise figure is 1. | 202 kB | 78 | Rficsolutions Inc. | RS03 |
| RGLNA03(2-12 GHz GaAs pHEMT).pdf | 13/02/08 | The RGLNA03 is 2.0 to 12.0 GHz high efficiency GaAs Enhancement mode p-HEMT Low noise amplifier .The device is designed for 802.11a/b/g standard.
The minimum noise figure achieved is 1.5 dB at 2 GHz. A single 3.5V and 12 mA current bias the LNA. No input | 114 kB | 92 | Rficsolutions.Inc | RGLNA03 |
| RGLNA09(5.15-5.35 GHz GaAs pHEMT ).pdf | 13/02/08 | The RGLNA09 is 5.15 to 5.35 GHz high efficiency
GaAs Enhancement mode psuedomorphic high
electron mobility transistor Low noise amplifier .The
device is designed for 802.11a and WLAN MIMO
system.
The noise figure is 1.4 dB at 5.25 GHz. The
RGLNA09 i | 36 kB | 61 | Rficsolutions.Inc | RGLNA09 |
| RGLNA06(2-6 GHz,3.3 V GaAs pHEMT).pdf | 13/02/08 | The RGLNA06 is a broadband high efficiency GaAs
Enhancement mode pHEMT Low Noise Amplifier.
The MMIC Low Noise Amplifier doesn’t require any
off-chip component. The Broadband LNA is
designed for the 802.11a/b/g/n system.
The LNA covers a wide range o | 54 kB | 78 | Rficsolutions.Inc | RGLNA06 |
| RGLNA01(0.7-3.0 GHz GaAs pHEMT).pdf | 13/02/08 | The RGLNA01 is 0.7 to 3.0 GHz high efficiency
GaAs Enhancement mode pHEMT Low Noise
Amplifier IP Block .The device is designed for use in
the IEEE 802.11b/g, PCS, PHS and Cellular system.
The die area of RGLNA01 is 0.8 mm x 0.7 mm, with
on chip input | 65 kB | 134 | Rficsolutions.Inc | RGLNA01 |
| RJP04__3.4_3.6GHz_SiGe BiCMOS_PA_.pdf | 12/02/08 | The RJPA04 is 3.4 to 3.6 GHz; high efficiency SiGe
BiCMOS power amplifier. The device is designed to
provide high efficiency with good power output for
WiMax applications.
The device consumes 310 mA and it gives the
power output of 28 dBm at P1 dB co | 173 kB | 139 | Rficsolutions Inc. | RJPA04 |
| RJP05 _2.4GHz_WLAN_PA_.pdf | 12/02/08 | The RJP05 is 2.4 GHz to 2.5 GHz; high efficiency
Power stage for WLAN Power Amplifier. The
Amplifier is designed using 0.18um SiGe BiCMOS
process for 802.11 b/g WLAN systems.
Power amplifier shows PAE of 31% at 24 dBm
power with output match off-chip | 206 kB | 485 | Rficsolutions Inc. | RJP05 |
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| RGPA01(2.4-2.5 GHz GaAs pHEMT).pdf | 13/02/08 | The RGPA01 is a 2.4 to 2.5 GHz high efficiency
GaAs Enhancement Mode pHEMT MMIC power
amplifier. This MMIC power amplifier doesn’t require
any off chip components.
The device is designed for 802.11b/g and WLAN
MIMO system. The Power Amplifier exhibit | 69 kB | 137 | Rficsolutions.Inc | RGPA01 |
| RJP01 _1.9GHz_WCDMA_PA_.pdf | 12/02/08 | The RJP01 is 1.920 to 1.980 GHz high efficiency
WCDMA Power Amplifier. The Amplifier is designed
using 0.18 um SiGe BiCMOS technology. Power
amplifier shows PAE of 41% at 28 dBm with off-chip
output matching.
It has been designed specially for use in | 238 kB | 166 | Rficsolutions Inc. | RJP01 |
| GEDA01.pdf | 11/02/08 | The GEDA01 is 7.0 GHz to 20.0 GHz low power
single stage buffer amplifier. The amplifier is
designed using 2 μm InGaP HBT Technology for
high frequency applications.
Driver amplifier shows gain of 4.5 dB at 20 GHz with
power output of 9 dBm. It | 48 kB | 517 | Rficsolutions Inc. | The GEDA01 is 7.0 GHz to 20.0 GHz low power |
| GRDA1.pdf | 11/02/08 | The GRDA1 is 10 GHz to 20 GHz differential
amplifier designed on 2 um InGaP HBT process.
The gain of GRDA1 is 5 dB typically with flatness of
±3dB over the entire bandwidth. Typical current
requirement for GRDA1 is 24 mA.
The one dB compression point | 46 kB | 75 | Rficsolutions Inc. | GRDA1 |
| RGDA01(2-6 GHz GaAs pHEMT).pdf | 13/02/08 | The RGDA01 is 2.0 to 6.0 GHz GaAs Enhancement
mode psuedomorphic high electron mobility
transistor Driver Amplifier. The device is designed
for IEEE 802.11a/b/g, WLAN standards and Cellular
system.
The driver amplifier can provide upto 20 dBm power
| 74 kB | 122 | Rficsolutions.Inc | RGDA01 |
| RDA03(2-4 GHz Driver Amp).pdf | 13/02/08 | The RDA03 is a 2.0 to 4.0 GHz, high gain Driver
Amplifier. It provides very good gain flatness over
the band. It requires +3.3 Volt supply.
It has tunability by having some off chip
components. It has the option to optimize externally
with off chip i | 128 kB | 96 | Rficsolutions.Inc | RDA03 |