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PF08107B
MOS FET Power Amplifier Module for E-GSM and DCS1800 Dual Band Handy Phone
ADE-208-787G (Z) Rev.7 Dec. 2001 Application
· Dual band amplifier for E-GSM (880 MHz to 915 MHz) and DCS1800 (1710 MHz to 1785 MHz). · For 3.5 V nominal operation
Features
· 2 in / 2 out dual band amplifier · Simple external circuit including output matching circuit · Simple power control · High gain 3stage amplifier : 0 dBm input Typ · Lead less thin & Small package : 8 × 13.75 × 1.6 mm Typ · High efficiency : 50 % Typ at 35.0 dBm for E-GSM 43 % Typ at 32.0 dBm for DCS1800
Pin Arrangement
· RF-K-8
5 G6 8 7 G 12
G 4 G 3
1: Pin GSM 2: Vapc 3: Vdd1 4: Pout GSM 5: Pout DCS 6: Vdd2 7: Vctl 8: Pin DCS G: GND
PF08107B
Absolute Maximum Ratings
(Tc = 25°C)
Item Supply voltage Supply current Vctl voltage Vapc voltage Input power Operating case temperature Storage temperature Output power Symbol Vdd Idd GSM Idd DCS Vctl Vapc Pin Tc (op) Tstg Pout GSM Pout DCS Rating 8 3.5 2 4 4 10 -30 to +100 -30 to +100 5 3 Unit V A A V V dBm °C °C W W
Note: The maximum ratings shall be valid over both the E-GSM-band (880 to 915 MHz), and the DCS1800-band (1710 to 1785 MHz).
Electrical Characteristics for DC
(Tc = 25°C)
Item Drain cutoff current Symbol Ids Min Typ Max 20 300 Unit µA µA Test Condition Vdd = 4.7 V, Vapc = 0 V, Vctl = 0.2 V Vdd = 8 V, Vapc = 0 V, Vctl = 0.2 V, Tc = -20 to +70°C Vapc = 2.2 V Vctl = 3 V
Vapc control current Vctl control current
Iapc Ictl
3 2
mA µA
Rev.7, Dec. 2001, page 2 of 44
PF08107B
Electrical Characteristics for E-GSM mode
(Tc = 25°C) Test conditions unless otherwise noted: f = 880 to 915 MHz, Vdd1 = Vdd2 = 3.5 V, Pin = 0 dBm, Vctl = 2.0 V, Rg = Rl = 50 , Tc = 25°C, Pulse operation with pulse width 577 µs and duty cycle 1:8 shall be used.
Item Frequency range Band select (GSM active) Input power Control voltage range Supply voltage Total efficiency 2nd harmonic distortion 3rd harmonic distortion 4th~8th harmonic distortion Input VSWR Output power (1) Output power (2) Isolation Isolation at DCS RF-output when GSM is active Switching time Stability Symbol F Vctl Pin Vapc Vdd T 2nd H.D. 3rd H.D. 4th~8th H.D. VSWR (in) Pout (1) Pout (2) Min 880 2.0 2 0.2 3.0 43 35.0 33.5 Typ 0 3.5 50 -45 -45 1.5 36.0 34.5 -42 -30 Max 915 2.8 2 2.2 4.5 -35 -35 -35 3 -37 -20 Unit MHz V dBm V V % dBc dBc dBc dBm dBm dBm dBm Vapc = 2.2 V Vdd = 3.1 V, Vapc = 2.2 V, Tc = +70°C Vapc = 0.2 V, Pin = 2 dBm Pout GSM = 35 dBm, Measured at f = 1760 to 1830 MHz Pout GSM = 0 to 35.0 dBm Vdd = 3.1 to 4.5 V, Pout 35.0 dBm, Vapc GSM 2.2 V, Rg = 50 , Tc = 25°C, Output VSWR = 6 : 1 All phases Vdd = 3.1 to 4.5 V, Pout GSM 35.0 dBm, Vapc GSM 2.2 V, Rg = 50 , t = 20 sec., Tc = 25°C, Output VSWR = 10 : 1 All phases f0 = 915 MHz, frx = f0 +10 MHz, Pout GSM = 35 dBm, RES BW = 100 kHz f0 = 915 MHz, frx = f0 +20 MHz, Pout GSM = 35 dBm, RES BW = 100 kHz Pout GSM = 35 dBm, Vapc = controlled Test Condition
t r, t f
1
2
µs
No parasitic oscillation
Load VSWR tolerance
No degradation
Noise power
Pnoise1
-80
dBm
Pnoise2
-84
dBm
Rev.7, Dec. 2001, page 3 of 44
PF08107B
Electrical Characteristics for E-GSM mode (cont)
Item Slope Pout/Vapc Phase shift Total conversion gain1 Symbol Min Typ Max 200 20 -5 Unit dB/V deg dB Test Condition Pout GSM = 5 to 35 dBm Pout GSM = 33.5 to 34.5 dBm f0 = 915 MHz, Other sig. = 895 MHz (-40 dBm) Pout GSM = 33.5 dBm f0 = 915 MHz, Other sig. = 905 MHz (-40 dBm) Pout GSM = 33.5 dBm Pout GSM = +5 dBm, 4%AM modulation at input 50 kHz modulation frequency
Total conversion gain2
-5
dB
AM output
40
%
Rev.7, Dec. 2001, page 4 of 44
PF08107B
Electrical Characteristics for DCS1800 mode
(Tc = 25°C)
Test conditions unless otherwise noted:
f = 1710 to 1785 MHz, Vdd1 = Vdd2 = 3.5 V, Pin = 0 dBm, Vctl = 0 V, Rg = Rl = 50 , Tc = 25°C, Pulse operation with pulse width 577 µs and duty cycle 1:8 shall be used.
Item Frequency range Band select (DCS active) Input power Control voltage range Supply voltage Total efficiency 2nd harmonic distortion 3rd harmonic distortion 4th~8th harmonic distortion Input VSWR Output power (1) Output power (2) Isolation Switching time Stability Symbol F Vctl Pin Vapc Vdd T 2nd H.D. 3rd H.D. 4th~8th H.D. VSWR (in) Pout (1) Pout (2) t r, t f Min 1710 0 2 0.2 3.0 37 32.0 30.5 Typ 0 3.5 43 -45 -45 1.5 33 31.5 -42 1 Max 1785 0.1 2 2.2 4.5 -35 -35 35 3 -37 2 Unit MHz V dBm V V % dBc dBc dBc dBm dBm dBm µs Vapc = 2.2 V Vdd = 3.1 V, Vapc = 2.2 V, Tc = +70°C Vapc = 0.2 V, Pin DCS = 2 dBm Pout DCS = 0 to 32.0 dBm Vdd = 3.1 to 4.5 V, Pout DCS 32.0 dBm, Vapc 2.2 V, Rg = 50 , Output VSWR = 6 : 1 All phases Vdd = 3.1 to 4.5 V, Pout DCS 32.0 dBm, Vapc 2.2 V, Rg = 50 , t = 20 sec., Output VSWR = 10 : 1 All phases f0 = 1785 MHz, frx = f0 +20 MHz, Pout DCS = 32.0 dBm, RES BW = 100 kHz Pout DCS = 0 to 32.0 dBm Pout DCS = 30.5 to 31.5 dBm f0 = 1785 MHz, Pout DCS = 30.5 dBm, Other sig. = 1765 MHz (-40 dBm) Pout DCS = 0 dBm, 4%AM modulation at input 50 kHz modulation frequency Pout DCS = 32.0 dBm, Vapc = controlled Test Condition DCS1800 (1710 to 1785)
No parasitic oscillation
Load VSWR tolerance
No degradation
Noise power
Pnoise
-77
dBm
Slope Pout/Vapc Phase shift Total conversion gain1 AM output
200 20 -5 40
dB/V deg dB %
Rev.7, Dec. 2001, page 5 of 44
PF08107B
Internal Diagram and External Circuit
PIN8 Pin DCS PIN5 Pout DCS
PIN1 Pin GSM
Z1
Z2 Bias circuit
PIN4 Pout GSM
Z3
Z4
PIN2 Vapc
PIN7 Vctl
PIN3 Vdd1 C1
PIN6 Vdd2 C2 C5 FB C6 FB Vdd2 Pout GSM Pout DCS
C3 FB Pin Pin Vapc
C4 FB Vctl
FB
Vdd1
Note: C1 to C4 = 0.01 µF CERAMIC CHIP C5 = C6 = 4.7 µF TANTALUM ELECTROLYTE FB = FERRITE BEAD BLO1RN1-A62-001 (MURATA) or equivalent Z1 = Z2 = Z3 = Z4 = 50 MICRO STRIP LINE
Rev.7, Dec. 2001, page 6 of 44
PF08107B
Characteristic Curves
Vapc vs Pout Vdd Dependence
880 MHz Pout vs. Vapc 38 37 36 35
Pout (dBm)
Tc = 25°C, Pin = 0 dBm, Zg = Zl = 50 Vdd = 3.5 V Vdd = 3.2 V Vdd = 3.0 V
34 33 32 31 30 29 28 0 0.5 1 1.5 Vapc (V) 2 2.5 3
915 MHz Pout vs. Vapc 38 37 36 35
Pout (dBm)
Tc = 25°C, Pin = 0 dBm, Zg = Zl = 50 Vdd = 3.5 V Vdd = 3.2 V Vdd = 3.0 V
34 33 32 31 30 29 28 0 0.5 1 1.5 Vapc (V) 2 2.5 3
Rev.7, Dec. 2001, page 7 of 44
PF08107B
Vapc vs Efficiency Vdd Dependence
880 MHz Efficiency vs. Vapc 60
Po = 35 dBm, Tc = 25°C, Pin = 0 dBm, Zg = Zl = 50 , Vdd = 3.5 V Vdd = 3.2 V Vdd = 3.0 V
50
40
Efficiency (%)
30
20
10
0
0
0.5
1
1.5 Vapc (V)
2
2.5
3
915 MHz Efficiency vs. Vapc 60
Po = 35 dBm, Tc = 25°C, Pin = 0 dBm, Zg = Zl = 50 , Vdd = 3.5 V Vdd = 3.2 V Vdd = 3.0 V
50
40
Efficiency (%)
30
20
10
0
0
0.5
1
1.5 Vapc (V)
2
2.5
3
Rev.7, Dec. 2001, page 8 of 44
PF08107B
Vapc vs Pout Temperature Dependence
880 MHz Pout vs. Vapc 40 35 30
Pout (dBm)
Vdd = 3.5 V, Pin = 0 dBm, Zg = Zl = 50 -20°C 25°C 75°C
25 20 15 10 5 0
0
0.5
1
1.5 Vapc (V)
2
2.5
3
915 MHz Pout vs. Vapc 40 35 30
Pout (dBm)
Vdd = 3.5 V, Pin = 0 dBm, Zg = Zl = 50 -20°C 25°C 75°C
25 20 15 10 5 0
0
0.5
1
1.5 Vapc (V)
2
2.5
3
Rev.7, Dec. 2001, page 9 of 44
PF08107B
Vapc vs Efficiency Temperature Dependence
880 MHz Efficiency vs. Vapc 60
Po = 35 dBm, Vdd = 3.5 V, Pin = 0 dBm, Zg = Zl = 50 , -20°C 25°C 75°C
50
40
Efficiency (%)
30
20
10
0
0
0.5
1
1.5 Vapc (V)
2
2.5
3
915 MHz Efficiency vs. Vapc 60
Po = 35 dBm, Vdd = 3.5 V, Pin = 0 dBm, Zg = Zl = 50 , -20°C 25°C 75°C
50
40
Efficiency (%)
30
20
10
0
0
0.5
1
1.5 Vapc (V)
2
2.5
3
Rev.7, Dec. 2001, page 10 of 44
PF08107B
Pin vs Pout Vdd Dependence
880 MHz Pout vs. Pin 40 35 30
Pout (dBm)
25 20 15 10 5
Vapc = 2.2 V, Tc = 25°C, Zg = Zl = 50 Vdd = 3.5 V Vdd = 3.2 V Vdd = 3.0 V
0 -20
-15
-10
-5 Pin (dBm)
0
5
10
915 MHz Pout vs. Pin 40 35 30
Pout (dBm)
25 20 15 10 5
Vapc = 2.2 V, Tc = 25°C, Zg = Zl = 50 Vdd = 3.5 V Vdd = 3.2 V Vdd = 3.0 V
0 -20
-15
-10
-5 Pin (dBm)
0
5
10
Rev.7, Dec. 2001, page 11 of 44
PF08107B
Pin vs Efficiency Vdd Dependence
880 MHz Efficiency vs. Pin 60
50
40
Efficiency (%)
30
20
10
Vapc = 2.2 V, Tc = 25°C, Zg = Zl = 50 Vdd = 3.5 V Vdd = 3.2 V Vdd = 3.0 V
0 -20
-15
-10
-5 Pin (dBm)
0
5
10
915 MHz Efficiency vs. Pin 60
50
40
Efficiency (%)
30
20
10
Vapc = 2.2 V, Tc = 25°C, Zg = Zl = 50 Vdd = 3.5 V Vdd = 3.2 V Vdd = 3.0 V
0 -20
-15
-10
-5 Pin (dBm)
0
5
10
Rev.7, Dec. 2001, page 12 of 44
PF08107B
Pin vs Pout Temperature Dependence
880 MHz Pout vs. Pin 40 35 30
Pout (dBm)
25 20 15 10 5
Vapc = 2.2 V, Vdd = 3.5 V, Zg = Zl = 50 -20°C 25°C 75°C
0 -20
-15
-10
-5 Pin (dBm)
0
5
10
915 MHz Pout vs. Pin 40 35 30
Pout (dBm)
25 20 15 10 5
Vapc = 2.2 V, Vdd = 3.5 V, Zg = Zl = 50 -20°C 25°C 75°C
0 -20
-15
-10
-5 Pin (dBm)
0
5
10
Rev.7, Dec. 2001, page 13 of 44
PF08107B
Pin vs Efficiency Temperature Dependence
880 MHz Efficiency vs. Pin 60
50
40
Efficiency (%)
30
20
10
Vapc = 2.2 V, Vdd = 3.5 V, Zg = Zl = 50 -20°C 25°C 75°C
0 -20
-15
-10
-5 Pin (dBm)
0
5
10
915 MHz Efficiency vs. Pin 60
50
40
Efficiency (%)
30
20
10
Vapc = 2.2 V, Vdd = 3.5 V, Zg = Zl = 50 -20°C 25°C 75°C
0 -20
-15
-10
-5 Pin (dBm)
0
5
10
Rev.7, Dec. 2001, page 14 of 44
PF08107B
Pout vs Efficiency Vdd Dependence
880 MHz Efficiency vs. Pout 60
Tc = 25°C, Pin = 0 dBm, Zg = Zl = 50 Vdd = 3.5 V Vdd = 3.2 V Vdd = 3.0 V
50
40
Efficiency (%)
30
20
10
0
0
5
10
15 20 25 Pout (dBm)
30
35
40
915 MHz Efficiency vs. Pout 60
Tc = 25°C, Pin = 0 dBm, Zg = Zl = 50 Vdd = 3.5 V Vdd = 3.2 V Vdd = 3.0 V
50
40
Efficiency (%)
30
20
10
0
0
5
10
15 20 25 Pout (dBm)
30
35
40
Rev.7, Dec. 2001, page 15 of 44
PF08107B
Pout vs Idd Vdd Dependence
880 MHz Idd, Iapc vs. Pout 3
Tc = 25°C, Pin = 0 dBm, Zg = Zl = 50 Vdd = 3.5 V Vdd = 3.2 V Vdd = 3.0 V Iapc (3.5 V)
2.5
Idd (A), Iapc (mA)
2
1.5
1
0.5
0
0
5
10
15 20 25 Pout (dBm)
30
35
40
915 MHz Idd, Iapc vs. Pout 3
Tc = 25°C, Pin = 0 dBm, Zg = Zl = 50 Vdd = 3.5 V Vdd = 3.2 V Vdd = 3.0 V Iapc (3.5 V)
2.5
Idd (A), Iapc (mA)
2
1.5
1
0.5
0
0
5
10
15 20 25 Pout (dBm)
30
35
40
Rev.7, Dec. 2001, page 16 of 44
PF08107B
Pout vs Harmonic Distortion Vdd Dependence
880 MHz 2fo vs. Pout -35 -40 -45
2fo (dBc)
-50 -55 -60 -65
Tc = 25°C, Pin = 0 dBm, Zg = Zl = 50 Vdd = 3.5 V Vdd = 3.2 V Vdd = 3.0 V
0
5
10
15 20 25 Pout (dBm) 915 MHz 2fo vs. Pout
30
35
40
-35 -40 -45
2fo (dBc)
-50 -55 -60 -65
Tc = 25°C, Pin = 0 dBm, Zg = Zl = 50 Vdd = 3.5 V Vdd = 3.2 V Vdd = 3.0 V
0
5
10
15 20 25 Pout (dBm)
30
35
40
Rev.7, Dec. 2001, page 17 of 44
PF08107B
Pout vs Harmonic Distortion Vdd Dependence (cont)
880 MHz 3fo vs. Pout -35 -40 -45
3fo (dBc)
-50 -55 -60 -65
Tc = 25°C, Pin = 0 dBm, Zg = Zl = 50 Vdd = 3.5 V Vdd = 3.2 V Vdd = 3.0 V
0
5
10
15 20 25 Pout (dBm) 915 MHz 3fo vs. Pout
30
35
40
-35 -40 -45
3fo (dBc)
-50 -55 -60 -65
Tc = 25°C, Pin = 0 dBm, Zg = Zl = 50 Vdd = 3.5 V Vdd = 3.2 V Vdd = 3.0 V
0
5
10
15 20 25 Pout (dBm)
30
35
40
Rev.7, Dec. 2001, page 18 of 44
PF08107B
Pout vs Slope, AM-AM conversion
880 MHz AM/AM, Slope vs. Pout 100
Vdd = 3.5 V, Tc = 25°C, Pin = 0 dBm, Zg = Zl = 50 AM (%) SLP (dB/V)
500
80
400
AM/AM (%)
60
300
40
200
20
100
0 -60
-40
-20 0 Pout (dBm)
20
0 40
915 MHz AM/AM, Slope vs. Pout 100
Vdd = 3.5 V, Tc = 25°C, Pin = 0 dBm, Zg = Zl = 50 AM (%) SLP (dB/V)
500
80
400
AM/AM (%)
60
300
40
200
20
100
0 -60
-40
-20 0 Pout (dBm)
20
0 40
Rev.7, Dec. 2001, page 19 of 44
Slope (dB/V)
Slope (dB/V)
PF08107B
Pout vs Input VSWR
880 MHz VSWR in vs. Pout 4
Vdd = 3.5 V, Tc = 25°C, Pin = 0 dBm, Zg = Zl = 50 , VSWR in
3.5
3
VSWR in
2.5
2
1.5
1 -60
-40
-20 0 Pout (dBm)
20
40
915 MHz VSWR in vs. Pout 4
Vdd = 3.5 V, Tc = 25°C, Pin = 0 dBm, Zg = Zl = 50 , VSWR in
3.5
3
VSWR in
2.5
2
1.5
1 -60
-40
-20 0 Pout (dBm)
20
40
Rev.7, Dec. 2001, page 20 of 44
PF08107B
Frequency vs Pout, Efficiency Vdd Dependence
GSM Pout vs. Frequency 37.5 37 36.5 36
Pout (dBm)
35.5 35 34.5 34 33.5 33
Vapc = 2.2 V, Pin = 0 dBm, Zg = Zl = 50 , Vdd = 3.5 V Vdd = 3.2 V Vdd = 3.0 V
880
890 900 Frequency (MHz)
910
920
GSM Efficiency vs. Frequency 60
55
50
Efficiency (%)
45
40
35
Vapc = 2.2 V, Pin = 0 dBm, Zg = Zl = 50 , Vdd = 3.5 V Vdd = 3.2 V Vdd = 3.0 V
30
880
890 900 Frequency (MHz)
910
920
Rev.7, Dec. 2001, page 21 of 44
PF08107B
Pout Temperature Dependence
GSM Pout vs. Tc 37.0
36.5
Pout (dBm)
36.0
35.5
Vapc = 2.2 V, Vdd = 3.5 V, Pin = 0 dBm, Zg = Zl = 50 , f = 880 MHz f = 915 MHz
35.0
34.5 -25
0
25 Tc (°C)
50
75
Rev.7, Dec. 2001, page 22 of 44
PF08107B
Vapc vs Pout Vdd Dependence
1710 MHz Pout vs. Vapc 36 35 34 33
Pout (dBm)
Tc = 25°C, Pin = 0 dBm, Zg = Zl = 50 Vdd = 3.5 V Vdd = 3.2 V Vdd = 3.0 V
32 31 30 29 28 27 26 0 0.5 1 1.5 Vapc (V) 2 2.5 3
1785 MHz Pout vs. Vapc 36 35 34 33
Pout (dBm)
Tc = 25°C, Pin = 0 dBm, Zg = Zl = 50 Vdd = 3.5 V Vdd = 3.2 V Vdd = 3.0 V
32 31 30 29 28 27 26 0 0.5 1 1.5 Vapc (V) 2 2.5 3
Rev.7, Dec. 2001, page 23 of 44
PF08107B
Vapc vs Efficiency Vdd Dependence
1710 MHz Efficiency vs. Vapc 60
Po = 32 dBm, Tc = 25°C, Pin = 0 dBm, Zg = Zl = 50 , Vdd = 3.5 V Vdd = 3.2 V Vdd = 3.0 V
50
40
Efficiency (%)
30
20
10
0
0
0.5
1
1.5 Vapc (V)
2
2.5
3
1785 MHz Efficiency vs. Vapc 60
Po = 32 dBm, Tc = 25°C, Pin = 0 dBm, Zg = Zl = 50 , Vdd = 3.5 V Vdd = 3.2 V Vdd = 3.0 V
50
40
Efficiency (%)
30
20
10
0
0
0.5
1
1.5 Vapc (V)
2
2.5
3
Rev.7, Dec. 2001, page 24 of 44
PF08107B
Vapc vs Pout Temperature Dependence
1710 MHz Pout vs. Vapc 40 35 30
Pout (dBm)
Vdd = 3.5 V, Pin = 0 dBm, Zg = Zl = 50 -20°C 25°C 75°C
25 20 15 10 5 0
0
0.5
1
1.5 Vapc (V)
2
2.5
3
1785 MHz Pout vs. Vapc 40 35 30
Pout (dBm)
Vdd = 3.5 V, Pin = 0 dBm, Zg = Zl = 50 -20°C 25°C 75°C
25 20 15 10 5 0
0
0.5
1
1.5 Vapc (V)
2
2.5
3
Rev.7, Dec. 2001, page 25 of 44
PF08107B
Vapc vs Efficiency Temperature Dependence
1710 MHz Efficiency vs. Vapc 60
Po = 32 dBm, Vdd = 3.5 V, Pin = 0 dBm, Zg = Zl = 50 , -20°C 25°C 75°C
50
40
Efficiency (%)
30
20
10
0
0
0.5
1
1.5 Vapc (V)
2
2.5
3
1785 MHz Efficiency vs. Vapc 60
Po = 32 dBm, Vdd = 3.5 V, Pin = 0 dBm, Zg = Zl = 50 , -20°C 25°C 75°C
50
40
Efficiency (%)
30
20
10
0
0
0.5
1
1.5 Vapc (V)
2
2.5
3
Rev.7, Dec. 2001, page 26 of 44
PF08107B
Pin vs Pout Vdd Dependence
1710 MHz Pout vs. Pin 40 35 30
Pout (dBm)
25 20 15 10 5
Vapc = 2.2 V, Tc = 25°C, Zg = Zl = 50 Vdd = 3.5 V Vdd = 3.2 V Vdd = 3.0 V
0 -20
-15
-10
-5 Pin (dBm)
0
5
10
1785 MHz Pout vs. Pin 40 35 30
Pout (dBm)
25 20 15 10 5
Vapc = 2.2 V, Tc = 25°C, Zg = Zl = 50 Vdd = 3.5 V Vdd = 3.2 V Vdd = 3.0 V
0 -20
-15
-10
-5 Pin (dBm)
0
5
10
Rev.7, Dec. 2001, page 27 of 44
PF08107B
Pin vs Efficiency Vdd Dependence
1710 MHz Efficiency vs. Pin 60
Vapc = 2.2 V, Tc = 25°C, Zg = Zl = 50 Vdd = 3.5 V Vdd = 3.2 V Vdd = 3.0 V
50
40
Efficiency (%)
30
20
10
0 -20
-15
-10
-5 Pin (dBm)
0
5
10
1785 MHz Efficiency vs. Pin 60
Vapc = 2.2 V, Tc = 25°C, Zg = Zl = 50 Vdd = 3.5 V Vdd = 3.2 V Vdd = 3.0 V
50
40
Efficiency (%)
30
20
10
0 -20
-15
-10
-5 Pin (dBm)
0
5
10
Rev.7, Dec. 2001, page 28 of 44
PF08107B
Pin vs Pout Temperature Dependence
1710 MHz Pout vs. Pin 40 35 30
Pout (dBm)
25 20 15 10 5
Vapc = 2.2 V, Vdd = 3.5 V, Zg = Zl = 50 -20°C 25°C 75°C
0 -20
-15
-10
-5 Pin (dBm)
0
5
10
1785 MHz Pout vs. Pin 40 35 30
Pout (dBm)
25 20 15 10 5
Vapc = 2.2 V, Vdd = 3.5 V, Zg = Zl = 50 -20°C 25°C 75°C
0 -20
-15
-10
-5 Pin (dBm)
0
5
10
Rev.7, Dec. 2001, page 29 of 44
PF08107B
Pin vs Efficiency Temperature Dependence
1710 MHz Efficiency vs. Pin 60
50
40
Efficiency (%)
30
20
10
Vapc = 2.2 V, Vdd = 3.5 V, Zg = Zl = 50 -20°C 25°C 75°C
0 -20
-15
-10
-5 Pin (dBm)
0
5
10
1785 MHz Efficiency vs. Pin 60
50
40
Efficiency (%)
30
20
10
Vapc = 2.2 V, Vdd = 3.5 V, Zg = Zl = 50 -20°C 25°C 75°C
0 -20
-15
-10
-5 Pin (dBm)
0
5
10
Rev.7, Dec. 2001, page 30 of 44
PF08107B
Pout vs Efficiency Vdd Dependence
1710 MHz Efficiency vs. Pout 60
Tc = 25°C, Pin = 0 dBm, Zg = Zl = 50 Vdd = 3.5 V Vdd = 3.2 V Vdd = 3.0 V
50
40
Efficiency (%)
30
20
10
0
0
5
10
15 20 25 Pout (dBm)
30
35
40
1785 MHz Efficiency vs. Pout 60
Tc = 25°C, Pin = 0 dBm, Zg = Zl = 50 Vdd = 3.5 V Vdd = 3.2 V Vdd = 3.0 V
50
40
Efficiency (%)
30
20
10
0
0
5
10
15 20 25 Pout (dBm)
30
35
40
Rev.7, Dec. 2001, page 31 of 44
PF08107B
Pout vs Idd Vdd Dependence
1710 MHz Idd, Iapc vs. Pout 3
Tc = 25°C, Pin = 0 dBm, Zg = Zl = 50 Vdd = 3.5 V Vdd = 3.2 V Vdd = 3.0 V Iapc (3.5 V)
2.5
Idd (A), Iapc (mA)
2
1.5
1
0.5
0
0
5
10
15 20 25 Pout (dBm)
30
35
40
1785 MHz Idd, Iapc vs. Pout 3
Tc = 25°C, Pin = 0 dBm, Zg = Zl = 50 Vdd = 3.5 V Vdd = 3.2 V Vdd = 3.0 V Iapc (3.5 V)
2.5
Idd (A), Iapc (mA)
2
1.5
1
0.5
0
0
5
10
15 20 25 Pout (dBm)
30
35
40
Rev.7, Dec. 2001, page 32 of 44
PF08107B
Pout vs Harmonic Distortion Vdd Dependence
1710 MHz 2fo vs. Pout -35 -40 -45
2fo (dBc)
-50 -55 -60 -65
Tc = 25°C, Pin = 0 dBm, Zg = Zl = 50 Vdd = 3.5 V Vdd = 3.2 V Vdd = 3.0 V
0
5
10
15 20 25 Pout (dBm)
30
35
40
1785 MHz 2fo vs. Pout -35 -40 -45
2fo (dBc)
-50 -55 -60 -65
Tc = 25°C, Pin = 0 dBm, Zg = Zl = 50 Vdd = 3.5 V Vdd = 3.2 V Vdd = 3.0 V
0
5
10
15 20 25 Pout (dBm)
30
35
40
Rev.7, Dec. 2001, page 33 of 44
PF08107B
Pout vs Harmonic Distortion Vdd Dependence
1710 MHz 3fo vs. Pout -35 -40 -45
3fo (dBc)
-50 -55 -60 -65
Tc = 25°C, Pin = 0 dBm, Zg = Zl = 50 Vdd = 3.5 V Vdd = 3.2 V Vdd = 3.0 V
0
5
10
15 20 25 Pout (dBm)
30
35
40
1785 MHz 3fo vs. Pout -35 -40 -45
3fo (dBc)
-50 -55 -60 -65
Tc = 25°C, Pin = 0 dBm, Zg = Zl = 50 Vdd = 3.5 V Vdd = 3.2 V Vdd = 3.0 V
0
5
10
15 20 25 Pout (dBm)
30
35
40
Rev.7, Dec. 2001, page 34 of 44
PF08107B
Pout vs Slope, AM-AM conversion
1710 MHz AM/AM, Slope vs. Pout 100
Vdd = 3.5 V, Tc = 25°C, Pin = 0 dBm, Zg = Zl = 50 AM (%) SLP (dB/V)
500
80
400
AM/AM (%)
60
300
40
200
20
100
0 -60
-40
-20 0 Pout (dBm)
20
0 40
1785 MHz AM/AM, Slope vs. Pout 100
Vdd = 3.5 V, Tc = 25°C, Pin = 0 dBm, Zg = Zl = 50 AM (%) SLP (dB/V)
500
80
400
AM/AM (%)
60
300
40
200
20
100
0 -60
-40
-20 0 Pout (dBm)
20
0 40
Rev.7, Dec. 2001, page 35 of 44
Slope (dB/V)
Slope (dB/V)
PF08107B
Pout vs Input VSWR
1710 MHz VSWR in vs. Pout 4
Vdd = 3.5 V, Tc = 25°C, Pin = 0 dBm, Zg = Zl = 50 , VSWR in
3.5
3
VSWR in
2.5
2
1.5
1 -60
-40
-20 0 Pout (dBm)
20
40
1785 MHz VSWR in vs. Pout 4
Vdd = 3.5 V, Tc = 25°C, Pin = 0 dBm, Zg = Zl = 50 , VSWR in
3.5
3
VSWR in
2.5
2
1.5
1 -60
-40
-20 0 Pout (dBm)
20
40
Rev.7, Dec. 2001, page 36 of 44
PF08107B
Frequency vs Pout, Efficiency Vdd Dependence
DCS Pout vs. Frequency 34 33.5 33
Pout (dBm)
32.5 32 31.5 31 30.5
Vapc = 2.2 V, Vdd = 3.5 V, Pin = 0 dBm, Zg = Zl = 50 , Vdd = 3.5 V Vdd = 3.2 V Vdd = 3.0 V
30 1710 1720 1730 1740 1750 1760 1770 1780 1790 Frequency (MHz) DCS Efficiency vs. Frequency 60
Vapc = 2.2 V, Vdd = 3.5 V, Pin = 0 dBm, Zg = Zl = 50 , Vdd = 3.5 V Vdd = 3.2 V Vdd = 3.0 V
55
50
Efficiency (%)
45
40
35
30 1710 1720 1730 1740 1750 1760 1770 1780 1790 Frequency (MHz)
Rev.7, Dec. 2001, page 37 of 44
PF08107B
Pout Temperature Dependence
DCS Pout vs. Tc 34.0
33.5
33.0
Pout (dBm)
32.5
32.0
31.5
Vapc = 2.2 V, Vdd = 3.5 V, Pin = 0 dBm, Zg = Zl = 50 , f = 1710 MHz f = 1785 MHz
31.0 -25
0
25 Tc (°C)
50
75
Rev.7, Dec. 2001, page 38 of 44
PF08107B
Pout, Eff vs Load inpedance for PF08107B (f = 880 MHz)
f = 880 MHz Pin = 0 dBm Vdd = 3.5 V Vapc = 2.2 V Tc = 25°C 36.5 dBm 37 dBm 36 dBm
35.5 dBm 35.8 dBm short 50 open 35 dBm
1.2 : 1
1.5 : 1
1.86 : 1
2.33 : 1 VSWR
SMTH CHART
Pout vs. Load impedance (f = 880 MHz)
f = 880 MHz Pin = 0 dBm Vdd = 3.5 V Pout = 35 dbm Tc = 25°C 35%
short
50
open 40%
1.2 : 1 50% 1.5 : 1
45%
1.86 : 1
2.33 : 1 VSWR
SMTH CHART
Eff vs. Load impedance (f = 880 MHz)
Rev.7, Dec. 2001, page 39 of 44
PF08107B
Pout, Eff vs Load inpedance for PF08107B (f = 915 MHz)
36 dBm f = 915 MHz Pin = 0 dBm Vdd = 3.5 V Vapc = 2.2 V Tc = 25°C 36.5 dBm
35.5 dBm 35 dBm 34.5 dBm
34 dBm
33.5 dBm short open
50
1.2 : 1
1.5 : 1
1.86 : 1
2.33 : 1 VSWR
SMTH CHART
Pout vs. Load impedance (f = 915 MHz)
f = 915 MHz Pin = 0 dBm Vdd = 3.5 V Pout = 35 dBm Tc = 25°C 45% 47%
50% 52% short 50 open
1.2 : 1
1.5 : 1
1.86 : 1
2.33 : 1 VSWR
SMTH CHART
Eff vs. Load impedance (f = 915 MHz)
Rev.7, Dec. 2001, page 40 of 44
PF08107B
Pout, Eff vs Load inpedance for PF08107B (f = 1710 MHz)
33.5 dBm f = 1710 MHz Pin = 0 dBm Vdd = 3.5 V Vapc = 2.2 V Tc = 25°C
33 dBm
32.5 dBm
short
50
32 dBm open
1.2 : 1
1.5 : 1
1.86 : 1
2.33 : 1 VSWR
SMTH CHART
Pout vs. Load impedance (f = 1710 MHz)
f = 1710 MHz Pin = 0 dBm Vdd = 3.5 V Pout = 32 dBm Tc = 25°C
35%
37%
40% 42% short open
50
1.2 : 1
45%
1.5 : 1
1.86 : 1
2.33 : 1 VSWR
SMTH CHART
Eff vs. Load impedance (f = 1710 MHz)
Rev.7, Dec. 2001, page 41 of 44
PF08107B
Pout, Eff vs Load inpedance for PF08107B (f = 1785 MHz)
33.5 dBm 33 dBm 32.5 dBm 32 dBm
f = 1785 MHz Pin = 0 dBm Vdd = 3.5 V Vapc = 2.2 V Tc = 25°C
31.5 dBm
31 dBm
short
50
open
1.2 : 1
1.5 : 1
1.86 : 1
2.33 : 1 VSWR
SMTH CHART
Pout vs. Load impedance (f = 1785 MHz)
f = 1785 MHz Pin = 0 dBm Vdd = 3.5 V Pout = 32 dBm Tc = 25°C
45% 44% 43% 42% 41% 50 40%
open
1.2 : 1
1.5 : 1
1.86 : 1
2.33 : 1 VSWR
SMTH CHART
Eff vs. Load impedance (f = 1785 MHz)
Rev.7, Dec. 2001, page 42 of 44
PF08107B
Package Dimensions
Unit: mm
1.6 ± 0.2 8
8.0 ± 0.3
7
G
6
5
8.0 ± 0.3
G
G
1
2
G 3 (Upper side)
4 5 G6 8 7 G 12 G 4 G 3
13.75 ± 0.3
(5.375) (5.375)
(3.275) (3.275) (1.6) (1.6)
(1.4)
(3.7) (1.3)
(1.6) (1.6)
(3.7)
(1.4) (2.4)
(1.4)
(3.7)
(2.4)
(2.2)
(0.7)
(1.5) (1.5)
1: Pin GSM 2: Vapc 3: Vdd1 4: Pout GSM 5: Pout DCS 6: Vdd2 7: Vctl 8: Pin DCS G: GND
(3.7)
(3.7)
(Bottom side)
Remark: Coplanarity of bottom side of terminals are less than 0 ± 0.1mm.
Hitachi Code JEDEC JEITA Mass (reference value) RF-K-8
Rev.7, Dec. 2001, page 43 of 44
PF08107B
Sales Strategic Planning Div.
Keep safety first in your circuit designs!
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
1. Renesas Technology Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap.
Notes regarding these materials
1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corporation product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corporation or a third party. 2. Renesas Technology Corporation assumes no responsibility for any damage, or infringement of any third-party's rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or circuit application examples contained in these materials. 3. All information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of publication of these materials, and are subject to change by Renesas Technology Corporation without notice due to product improvements or other reasons. It is therefore recommended that customers contact Renesas Technology Corporation or an authorized Renesas Technology Corporation product distributor for the latest product information before purchasing a product listed herein. The information described here may contain technical inaccuracies or typographical errors. Renesas Technology Corporation assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors. Please also pay attention to information published by Renesas Technology Corporation by various means, including the Renesas Technology Corporation Semiconductor home page (http://www.renesas.com). 4. When using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to evaluate all information as a total system before making a final decision on the applicability of the information and products. Renesas Technology Corporation assumes no responsibility for any damage, liability or other loss resulting from the information contained herein. 5. Renesas Technology Corporation semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life is potentially at stake. Please contact Renesas Technology Corporation or an authorized Renesas Technology Corporation product distributor when considering the use of a product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use. 6. The prior written approval of Renesas Technology Corporation is necessary to reprint or reproduce in whole or in part these materials. 7. If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and cannot be imported into a country other than the approved destination. Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited. 8. Please contact Renesas Technology Corporation for further details on these materials or the products contained therein.
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Colophon 0.0
Rev.7, Dec. 2001, page 44 of 44