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Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp.
The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.) Accordingly, although Hitachi, Hitachi, Ltd., Hitachi Semiconductors, and other Hitachi brand names are mentioned in the document, these names have in fact all been changed to Renesas Technology Corp. Thank you for your understanding. Except for our corporate trademark, logo and corporate statement, no changes whatsoever have been made to the contents of the document, and these changes do not constitute any alteration to the contents of the document itself. Renesas Technology Home Page: http://www.renesas.com
Renesas Technology Corp. Customer Support Dept. April 1, 2003
Cautions
Keep safety first in your circuit designs! 1. Renesas Technology Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corporation product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corporation or a third party. 2. Renesas Technology Corporation assumes no responsibility for any damage, or infringement of any third-party's rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or circuit application examples contained in these materials. 3. All information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of publication of these materials, and are subject to change by Renesas Technology Corporation without notice due to product improvements or other reasons. It is therefore recommended that customers contact Renesas Technology Corporation or an authorized Renesas Technology Corporation product distributor for the latest product information before purchasing a product listed herein. The information described here may contain technical inaccuracies or typographical errors. Renesas Technology Corporation assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors. Please also pay attention to information published by Renesas Technology Corporation by various means, including the Renesas Technology Corporation Semiconductor home page (http://www.renesas.com). 4. When using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to evaluate all information as a total system before making a final decision on the applicability of the information and products. Renesas Technology Corporation assumes no responsibility for any damage, liability or other loss resulting from the information contained herein. 5. Renesas Technology Corporation semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life is potentially at stake. Please contact Renesas Technology Corporation or an authorized Renesas Technology Corporation product distributor when considering the use of a product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use. 6. The prior written approval of Renesas Technology Corporation is necessary to reprint or reproduce in whole or in part these materials. 7. If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and cannot be imported into a country other than the approved destination. Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited. 8. Please contact Renesas Technology Corporation for further details on these materials or the products contained therein.
PF08127B
MOS FET Power Amplifier Module for E-GSM and DCS1800/1900 Triple Band Handy Phone
ADE-208-1606 (Z) Rev.0 Oct. 2002 Application
· Triple band amplifier for E-GSM (880 MHz to 915 MHz), DCS1800/1900 (1710 MHz to 1785 MHz, 1850 MHz to 1910 MHz). · For 3.5 V & GPRS Class12 operation compatible
Features
· All in one including output matching circuit · Simple external circuit · Simple power control · High gain 3stage amplifier : 0 dBm input Typ · Lead less thin & Small package : 8.0 × 10.0 mm Typ × 1.5 mm Max · High efficiency : 55% Typ at 35.0 dBm for E-GSM 47% Typ at 32.5 dBm for DCS1800 47% Typ at 32.0 dBm for DCS1900
Pin Arrangement
· RF-Q-8
5 G6 8 7 3 4 2G 1
1: Pin GSM 2: Vapc 3: Vdd1 4: Pout GSM 5: Pout DCS 6: Vdd2 7: Vctl 8: Pin DCS G: GND
PF08127B
Absolute Maximum Ratings *1
(Tc = 25°C)
Item Supply voltage Symbol Vdd Rating 7.0 5.0 Supply current Idd GSM Idd DCS Vctl voltage Vapc voltage Input power Operating case temperature * Storage temperature Output power
2
Unit V V A A V V dBm °C °C W W
Remark at no-operation at operation (50 load)
3.5 2 4 4 10 -30 to +100 -40 to +100 5 3
Vctl Vapc Pin Tc (op) Tstg Pout GSM Pout DCS
Notes: 1. The maximum ratings shall be valid over both the E-GSM-band (880 to 915 MHz), and the DCS1800/1900-band (1710 to 1785 MHz, 1850 to 1910 MHz). 2. These are specified at pulsed operation with pulse width = 1154 µsec and duty cycle of 2:8.
Electrical Characteristics for DC
(Tc = 25°C)
Item Drain cutoff current Vapc control current Vctl control current Symbol Ids Iapc Ictl Min Typ Max 20 2.0 2 Unit µA mA µA Test Condition Vdd = 4.7 V, Vapc = 0 V, Vctl = 0.2 V Vapc = 2.2 V Vctl = 3 V
Rev.0, Oct. 2002, page 2 of 14
PF08127B
Electrical Characteristics for E-GSM band
(Tc = 25°C) Test conditions unless otherwise noted: f = 880 to 915 MHz, Vdd1 = Vdd2 = 3.5 V, Pin = 0 dBm, Vctl = 2.0 V, Rg = Rl = 50 , Tc = 25°C, Pulse operation with pulse width 1154 µs and duty cycle 2:8 shall be used.
Item Frequency range Band select (GSM active) Input power Control voltage range Supply voltage Total efficiency 2nd harmonic distortion 3rd harmonic distortion 4th~8th harmonic distortion Input VSWR Output power (1) Output power (2) Symbol f Vctl Pin Vapc Vdd T 2nd H.D. 3rd H.D. 4th~8th H.D. VSWR (in) Pout (1) Pout (2) Min 880 2.0 2 0.2 3.1 47 35.0 33.5 Typ 0 3.5 55 -15(50) -10(45) 1.5 36.0 34.5 Max 915 2.8 2 2.2 4.5 0(35) 0(35) 0(35) 3 Unit MHz V dBm V V % dBm(dBc) dBm(dBc) dBm(dBc) dBm dBm Vapc = 2.2 V Vdd = 3.1 V, Vapc = 2.2 V, Tc = +85°C Idd at Low power Isolation Isolation at DCS RF-output when GSM is active Switching time Stability tr, tf 1 2 µs Pout GSM = 5 to 35 dBm Vdd = 3.1 to 4.5 V, Pout 35 dBm, Vapc GSM 2.2 V, Rg = 50 , Output VSWR = 6 : 1 All phase angles Load VSWR tolerance No degradation or Permanent degradation Load VSWR tolerance at GPRS CLASS 12 operation No degradation or Permanent degradation Vdd = 3.1 to 4.5 V, Pout GSM 35 dBm, Vapc GSM 2.2 V, Rg = 50 , t 20 sec., Output VSWR = 10 : 1 All phase angles Vdd = 3.1 to 4.2 V, Pout GSM 35 dBm, Vapc GSM 2.2 V, Rg = 50 , t 20 sec., Tc 90°C, Output VSWR = 10 : 1 All phase angles Slope Pout/Vapc AM output 160 15 200 20 dB/V % Pout GSM = 5 to 35 dBm Pout GSM = 5 to 35 dBm, 4% AM modulation at input 50 kHz modulation frequency -48 -25 300 -37 -18 mA dBm dBm Pout GSM = 7 dBm Vapc = 0.2 V Pout GSM = 35 dBm, Measured at f = 1760 to 1830 MHz Pout GSM = 35 dBm, Vapc = controlled Test Condition
No parasitic oscillation > 36 dBm
Rev.0, Oct. 2002, page 3 of 14
PF08127B
Electrical Characteristics for DCS1800 band
(Tc = 25°C)
Test conditions unless otherwise noted:
f = 1710 to 1785 MHz, Vdd1 = Vdd2 = 3.5 V, Pin = 0 dBm, Vctl = 0 V, Rg = Rl = 50 , Tc = 25°C, Pulse operation with pulse width 1154 µs and duty cycle 2:8 shall be used.
Item Frequency range Band select (DCS active) Input power Control voltage range Supply voltage Total efficiency 2nd harmonic distortion 3rd harmonic distortion 4th~8th harmonic distortion Input VSWR Output power (1) Output power (2) Symbol f Vctl Pin Vapc Vdd T 2nd H.D. 3rd H.D. 4th~8th H.D. VSWR (in) Pout (1) Pout (2) Min 1710 0 2 0.2 3.1 40 32.5 31.0 Typ 0 3.5 47 -14.5(47) -7.5(40) 1.5 33.5 32.0 Max 1785 0.1 2 2.2 4.5 -2.5(35) -2.5(35) -2.5(35) 3 Unit MHz V dBm V V % dBm(dBc) dBm(dBc) dBm(dBc) dBm dBm Vapc = 2.2 V Vdd = 3.1 V, Vapc = 2.2 V, Tc = +85°C, Idd at Low power Isolation Switching time Stability tr, tf -- -42 1 150 -37 2 mA dBm µs Pout DCS = 5 dBm Vapc = 0.2 V Pout DCS = 0 to 32.5 dBm Vdd = 3.1 to 4.5 V, Pout DCS 32.5 dBm, Vapc 2.2 V, Rg = 50 , Output VSWR = 6 : 1 All phase angles Load VSWR tolerance No degradation or Permanent degradation Load VSWR tolerance at GPRS CLASS 12 operation No degradation or Permanent degradation Vdd = 3.1 to 4.5 V, Pout DCS 32.5 dBm, Vapc 2.2 V, Rg = 50 , t 20 sec., Output VSWR = 10 : 1 All phase angles Vdd = 3.1 to 4.2 V, Pout DCS 32.5 dBm, Vapc 2.2 V, Rg = 50 , t 20 sec., Tc 90°C, Output VSWR = 10 : 1 All phase angles Slope Pout/Vapc AM output 160 15 200 20 dB/V % Pout DCS = 0 to 32.5 dBm Pout DCS = 0 to 32.5 dBm, 4% AM modulation at input 50 kHz modulation frequency Pout DCS = 32.5 dBm, Vapc = controlled Test Condition
No parasitic oscillation > 36 dBm
Rev.0, Oct. 2002, page 4 of 14
PF08127B
Electrical Characteristics for DCS1900 band
(Tc = 25°C)
Test conditions unless otherwise noted:
f = 1850 to 1910 MHz, Vdd1 = Vdd2 = 3.5 V, Pin = 0 dBm, Vctl = 0.2 V, Rg = Rl = 50 , Tc = 25°C, Pulse operation with pulse width 1154 µs and duty cycle 2:8 shall be used.
Item Frequency range Band select (DCS active) Input power Control voltage range Supply voltage Total efficiency 2nd harmonic distortion 3rd harmonic distortion 4th~8th harmonic distortion Input VSWR Output power (1) Output power (2) Symbol f Vctl Pin Vapc Vdd T 2nd H.D. 3rd H.D. 4th~8th H.D. VSWR (in) Pout (1) Pout (2) Min 1850 0 2 0.2 3.1 40 32.0 30.5 Typ 0 3.5 47 -15(47) -8(40) 1.5 33.0 31.5 Max 1910 0.1 2 2.2 4.5 -3(35) -3(35) -3(35) 3 Unit MHz V dBm V V % dBm(dBc) dBm(dBc) dBm(dBc) dBm dBm Vapc = 2.2 V Vdd = 3.1 V, Vapc = 2.2 V, Tc = +85°C Idd at Low power Isolation Switching time Stability tr, tf -42 1 150 -37 2 mA dBm µs Pout DCS = 5 dBm Vapc = 0.2 V Pout DCS = 0 to 32.0 dBm Vdd = 3.1 to 4.5 V, Pout DCS 32.0 dBm, Vapc 2.2 V, Rg = 50 , Output VSWR = 6 : 1 All phase angles Load VSWR tolerance No degradation or Permanent degradation Load VSWR tolerance at GPRS CLASS 12 operation No degradation or Permanent degradation Vdd = 3.1 to 4.5 V, Pout DCS 32.0 dBm, Vapc 2.2 V, Rg = 50 , t 20 sec., Output VSWR = 10 : 1 All phase angles Vdd = 3.1 to 4.2 V, Pout DCS 32.0 dBm, Vapc 2.2 V, Rg = 50 , t 20 sec., Tc 90°C, Output VSWR = 10 : 1 All phase angles Slope Pout/Vapc AM output 160 15 200 20 dB/V % Pout DCS = 0 to 32.0 dBm Pout DCS = 0 to 32.0 dBm, 4% AM modulation at input 50 kHz modulation frequency Pout DCS = 32.0 dBm, Vapc = controlled Test Condition
No parasitic oscillation > 36 dBm
Rev.0, Oct. 2002, page 5 of 14
PF08127B
Circuit Diagram
PIN7 Vctl PIN6 Vdd2
PIN8 Pin DCS
PIN5 Pout DCS
PIN1 Pin GSM
PIN4 Pout GSM
Bias circuit PIN2 Vapc PIN3 Vdd1
Rev.0, Oct. 2002, page 6 of 14
PF08127B
Characteristic Curves
GSM mode (880MHz to 915 MHz)
GSM mode (880 MHz) Pout, Eff vs. Vapc 40 30 20 10 0 10 20 30 40 50 60 100 Pin = 0 dBm 90 Vdd = 3.5 V 80 Pout Vapc = control 70 Tc = 25°C Eff 60 50 40 30 20 10 0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 2.2 Vapc (V) 40 30 20 10 0 10 20 30 40 50 60 GSM mode (915 MHz) Pout, Eff vs. Vapc 100 90 Pout 80 70 Eff 60 50 40 30 20 10 0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 2.2 Vapc (V) Pin = 0 dBm Vdd = 3.5 V Vapc = control Tc = 25°C
Pout (dBm)
Pout (dBm)
Eff (%)
GSM mode (880 MHz) Eff vs. Pout 60 Pin = 0 dBm 50 Vdd = 3.5 V Vapc = control 40 Tc = 25°C 30 20 10 0 0 5 10 15 20 25 Pout (dBm) 30 35 40 60
GSM mode (915 MHz) Eff vs. Pout Pin = 0 dBm 50 Vdd = 3.5 V Vapc = control 40 Tc = 25°C 30 20 10 0 0 5 10 15 20 25 30 35 40 Pout (dBm)
Eff (%)
GSM mode (880 MHz) Pout, Eff vs. Pin 37.0 Vdd = 3.5 V 36.5 Tc = 25°C
Pout (dBm)
Eff (%)
GSM mode (915 MHz) Pout, Eff vs. Pin 65 60
Eff (%)
37.0 Vdd = 3.5 V 36.5 Tc = 25°C
Pout (dBm)
65 Eff 60 55 Pout Pout:Vapc = 2.2 V Eff:Pout = 35 dBm 6 50 45 40 8 10
Eff (%)
Pout 36.0 35.5 35.0 Eff Pout:Vapc = 2.2 V Eff:Pout = 35 dBm 6 55 50 45 40 8 10
36.0 35.5 35.0
34.5 10 8 6 4 2 0 2 4 Pin (dBm)
34.5 10 8 6 4 2 0 2 4 Pin (dBm)
Rev.0, Oct. 2002, page 7 of 14
Eff (%)
PF08127B
GSM mode (880MHz to 915 MHz) (cont.)
GSM mode (880 MHz) Idd vs. Pout 10 Pin = 0 dBm Vdd = 3.5 V Vapc = control 1 Tc = 25°C 10 GSM mode (915 MHz) Idd vs. Pout Pin = 0 dBm Vdd = 3.5 V Vapc = control 1 Tc = 25°C
Idd (A)
Idd (A)
0.1
0.1
0.01 50 40 30 20 10 0 10 Pout (dBm)
20
30
40
0.01 50 40 30 20 10 0 10 Pout (dBm)
20
30
40
GSM mode Pout, Eff vs. Freq 38 Vdd = 3.5 V 37 Tc = 25°C
Pout (dBm)
GSM mode Pout vs. Vdd 60 55
Eff (%) Pout (dBm)
Eff
39
36 35 34 33 700
Pout
50 45 40
Vdd = 3.5 V 38 Tc = 25°C Pout:Vapc = 2.2 V Eff:Pout = 35 dBm 37 36 35 34 3 3.2 3.4
880 MHz 915 MHz
Pout:Vapc = 2.2 V Eff:Pout = 35 dBm 750 800 850 900 Freq (MHz) 950
35 30 1000
3.6 3.8 Vdd (V)
4
4.2
4.4
GSM mode (880 MHz) Pout vs. Pin 37 Vapc = 2.2 V
Pout (dBm)
GSM mode (915 MHz) Pout vs. Pin 37 Vapc = 2.2 V
Pout (dBm)
Vdd = 3.5 V, Tc = 25°C 36 35 34 Vdd = 3.5 V, Tc = 85°C
36 35 Vdd = 3.1 V, Tc = 85°C 34 33 8
Vdd = 3.5 V, Tc = 25°C Vdd = 3.5 V, Tc = 85°C Vdd = 3.1 V, Tc = 85°C
6
4
2 0 2 Pin (dBm)
4
6
8
33 8
6
4
2 0 2 Pin (dBm)
4
6
8
Rev.0, Oct. 2002, page 8 of 14
PF08127B
DCS mode (1710MHz to 1785 MHz)
DCS mode (1710 MHz) Pout, Eff vs. Vapc 40 100 30 Pin = 0 dBm 90 Pout 20 Vdd = 3.5 V 80 10 Vapc = control 70 Tc = 25°C 0 60 Eff 50 10 20 40 30 30 40 20 50 10 60 0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 2.2 Vapc (V) DCS mode (1785 MHz) Pout, Eff vs. Vapc 40 100 30 Pin = 0 dBm 90 Pout 20 Vdd = 3.5 V 80 10 Vapc = control 70 Tc = 25°C 0 60 Eff 50 10 20 40 30 30 40 20 50 10 60 0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 2.2 Vapc (V)
Pout (dBm)
Pout (dBm)
Eff (%)
DCS mode (1710 MHz) Eff vs. Pout 60 Pin = 0 dBm 50 Vdd = 3.5 V Vapc = control 40 Tc = 25°C 30 20 10 0 0 5 10 15 20 Pout (dBm) 25 30 35 60
DCS mode (1785 MHz) Eff vs. Pout Pin = 0 dBm 50 Vdd = 3.5 V Vapc = control 40 Tc = 25°C 30 20 10 0 0 5 10 15 20 Pout (dBm) 25 30 35
Eff (%)
DCS mode (1710 MHz) Pout, Eff vs. Pin 34.5 Vdd = 3.5 V 34.0 Tc = 25°C
Pout (dBm)
Eff (%)
DCS mode (1785 MHz) Pout, Eff vs. Pin 60 34.5 Vdd = 3.5 V 34.0 Tc = 25°C
Pout (dBm) Eff (%)
60 55 50 Eff 45 Pout:Vapc = 2.2 V Eff:Pout = 32.5 dBm 6 40 35 8 10
Eff (%)
Pout 55 50 Eff 45 40 6 35 8 10
Pout 33.5 33.0 32.5
33.5 33.0 32.5
Pout:Vapc = 2.2 V Eff:Pout = 32.5 dBm
32.0 10 8 6 4 2 0 2 4 Pin (dBm)
32.0 10 8 6 4 2 0 2 4 Pin (dBm)
Rev.0, Oct. 2002, page 9 of 14
Eff (%)
PF08127B
DCS mode (1710MHz to 1785 MHz) (cont.)
DCS mode (1710 MHz) Idd vs. Pout 10 Pin = 0 dBm Vdd = 3.5 V Vapc = control 1 Tc = 25°C 10 DCS mode (1785 MHz) Idd vs. Pout Pin = 0 dBm Vdd = 3.5 V Vapc = control 1 Tc = 25°C
Idd (A)
Idd (A)
0.1
0.1
0.01 50 40 30 20 10 0 10 Pout (dBm)
20
30
40
0.01 50 40 30 20 10 0 10 Pout (dBm)
20
30
40
DCS, PCS mode Pout, Eff vs. Freq 35 34
Pout (dBm)
DCS mode Pout vs. Vdd 60 36
Pout (dBm)
Pout
55 50
Eff (%)
Pin = 0 dBm Vapc = 2.2 V 35 Tc = 25°C 34
1710 MHz
Vdd = 3.5 V 33 Tc = 25°C 32 31 Eff Pout:Vapc = 2.2 V Eff:Pout = 32.5 dBm
45 40
1785 MHz 33 32 3 3.2 3.4 3.6 3.8 Vdd (V) 4 4.2 4.4
30 35 1600 1650 1700 1750 1800 1850 1900 1950 2000 Freq (MHz)
DCS mode (1710 MHz) Pout vs. Pin 36 Vapc = 2.2 V 35
Pout (dBm) Pout (dBm)
DCS mode (1785 MHz) Pout vs. Pin 36 Vapc = 2.2 V
Vdd = 3.5 V, Tc = 25°C Vdd = 3.5 V, Tc = 85°C Vdd = 3.1 V, Tc = 85°C
35 34 33 32 Vdd = 3.5 V, Tc = 25°C Vdd = 3.5 V, Tc = 85°C Vdd = 3.1 V, Tc = 85°C
34 33 32 31 8 6 4
2 0 2 Pin (dBm)
4
6
8
31 8
6
4
2 0 2 Pin (dBm)
4
6
8
Rev.0, Oct. 2002, page 10 of 14
PF08127B
PCS mode (1850MHz to 1910 MHz)
PCS mode (1850 MHz) Pout, Eff vs. Vapc 40 100 30 Pin = 0 dBm 90 20 Vdd = 3.5 V 80 Pout 10 Vapc = control 70 Tc = 25°C 0 60 10 50 Eff 20 40 30 30 40 20 50 10 60 0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 2.2 Vapc (V) PCS mode (1910 MHz) Pout, Eff vs. Vapc 40 100 30 Pin = 0 dBm 90 Pout 20 Vdd = 3.5 V 80 10 Vapc = control 70 Tc = 25°C 0 60 10 50 Eff 20 40 30 30 40 20 50 10 60 0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 2.2 Vapc (V)
Pout (dBm)
Pout (dBm)
Eff (%)
PCS mode (1850 MHz) Eff vs. Pout 60 Pin = 0 dBm 50 Vdd = 3.5 V Vapc = control 40 Tc = 25°C 30 20 10 0 0 5 10 15 20 Pout (dBm) 25 30 35 60
PCS mode (1910 MHz) Eff vs. Pout Pin = 0 dBm 50 Vdd = 3.5 V Vapc = control 40 Tc = 25°C 30 20 10 0 0 5 10 15 20 25 30 35 Pout (dBm)
Eff (%)
PCS mode (1850 MHz) Pout, Eff vs. Pin 34.5 Vdd = 3.5 V 34.0 Tc = 25°C
Pout (dBm)
Eff (%)
PCS mode (1910 MHz) Pout, Eff vs. Pin 60 55
Eff (%)
34.5 Vdd = 3.5 V 34.0 Tc = 25°C
Pout (dBm)
Pout:Vapc = 2.2 V Eff:Pout = 32 dBm
60 55 50 45
Eff (%)
Eff 33.5 33.0 32.5 32.0 8 6 Pout Pout:Vapc = 2.2 V Eff:Pout = 32 dBm 4 2 0 2 Pin (dBm) 4 6 8 50 45 40 35
33.5 33.0
Eff
Pout 32.5 32.0 8 6 4 2 0 2 Pin (dBm) 4 6 8 40 35
Rev.0, Oct. 2002, page 11 of 14
Eff (%)
PF08127B
PCS mode (1850MHz to 1910 MHz) (cont.)
PCS mode (1850 MHz) Idd vs. Pout 10 Pin = 0 dBm Vdd = 3.5 V Vapc = control 1 Tc = 25°C 10 PCS mode (1910 MHz) Idd vs. Pout Pin = 0 dBm Vdd = 3.5 V Vapc = control 1 Tc = 25°C
Idd (A)
0.1
Idd (A)
0.1
0.01 50 40 30 20 10 0 10 Pout (dBm)
20
30
40
0.01 50 40 30 20 10 0 10 Pout (dBm)
20
30
40
DCS, PCS mode Pout, Eff vs. Freq 35 34
Pout (dBm)
PCS mode Pout vs. Vdd 60 36
Pout (dBm)
Pout
55 50 Eff 45 40
Eff (%)
Pin = 0 dBm 35 Vapc = 2.2 V Tc = 25°C 34 33 32 31 3 3.2 3.4
1850 MHz
Vdd = 3.5 V 33 Tc = 25°C 32 31
1910 MHz
Pout:Vapc = 2.2 V Eff:Pout = 32 dBm
30 35 1600 1650 1700 1750 1800 1850 1900 1950 2000 Freq (MHz)
3.6 3.8 Vdd (V)
4
4.2
4.4
PCS mode (1850 MHz) Pout vs. Pin 35 34
Pout (dBm)
PCS mode (1910 MHz) Pout vs. Pin 35 34
Pout (dBm)
Vapc = 2.2 V Vdd = 3.5 V, Tc = 25°C Vdd = 3.5 V, Tc = 85°C Vdd = 3.1 V, Tc = 85°C
Vapc = 2.2 V Vdd = 3.5 V, Tc = 25°C Vdd = 3.5 V, Tc = 85°C Vdd = 3.1 V, Tc = 85°C
33 32 31 30 29 8 6 4
33 32 31 30
2 0 2 Pin (dBm)
4
6
8
29 8
6
4
2 0 2 Pin (dBm)
4
6
8
Rev.0, Oct. 2002, page 12 of 14
PF08127B
Package Dimensions
Preliminary
10.0 ± 0.3 8 7 G 6 5 1.5 max
Unit: mm
1
2
G
3
4
8.0 ± 0.3
5 G6 8 7 3 4 2G 1
(Upper side)
(1.80)
1: Pin GSM 2: Vapc 3: Vdd1 4: Pout GSM 5: Pout DCS 6: Vdd2 7: Vctl 8: Pin DCS G: GND
(3.20)
(0.80)
(0.80)
(1.20) (2.50) (3.90)
(0.60)
(Bottom side)
Hitachi Code JEDEC JEITA Mass (reference value)
RF-Q-8 -- -- --
Rev.0, Oct. 2002, page 13 of 14
PF08127B
Sales Strategic Planning Div.
Keep safety first in your circuit designs!
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
1. Renesas Technology Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap.
Notes regarding these materials
1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corporation product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corporation or a third party. 2. Renesas Technology Corporation assumes no responsibility for any damage, or infringement of any third-party's rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or circuit application examples contained in these materials. 3. All information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of publication of these materials, and are subject to change by Renesas Technology Corporation without notice due to product improvements or other reasons. It is therefore recommended that customers contact Renesas Technology Corporation or an authorized Renesas Technology Corporation product distributor for the latest product information before purchasing a product listed herein. The information described here may contain technical inaccuracies or typographical errors. Renesas Technology Corporation assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors. Please also pay attention to information published by Renesas Technology Corporation by various means, including the Renesas Technology Corporation Semiconductor home page (http://www.renesas.com). 4. When using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to evaluate all information as a total system before making a final decision on the applicability of the information and products. Renesas Technology Corporation assumes no responsibility for any damage, liability or other loss resulting from the information contained herein. 5. Renesas Technology Corporation semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life is potentially at stake. Please contact Renesas Technology Corporation or an authorized Renesas Technology Corporation product distributor when considering the use of a product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use. 6. The prior written approval of Renesas Technology Corporation is necessary to reprint or reproduce in whole or in part these materials. 7. If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and cannot be imported into a country other than the approved destination. Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited. 8. Please contact Renesas Technology Corporation for further details on these materials or the products contained therein.
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Copyright © 2003. Renesas Technology Corporation, All rights reserved. Printed in Japan.
Colophon 0.0
Rev.0, Oct. 2002, page 14 of 14