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STW28NK60Z
N-CHANNEL 600 V - 0.155 - 27A TO-247
Zener-Protected SuperMESHTM MOSFET
Table 1: General Features Figure 1: Package
TYPE VDSS RDS(on) ID PW
STW28NK60Z 600 V < 0.185 27 A 350 W
s TYPICAL RDS(on) = 0.155
s EXTREMELY HIGH dv/dt CAPABILITY
s 100% AVALANCHE TESTED
s GATE CHARGE MINIMIZED
s VERY LOW INTRINSIC CAPACITANCES 3
s)
2
s VERY GOOD MANUFACTURING 1
REPEATIBILITY
t(
uc
TO-247
d
DESCRIPTION
The SuperMESHTM series is obtained through an
extreme optimization of ST's well established P ro
strip-based PowerMESHTM layout. In addition to
pushing on-resistance significantly down, special te
Figure 2: Internal Schematic Diagram
le
so
care is taken to ensure a very good dv/dt capability
for the most demanding application. Such series
Ob
complements ST full range of high vltage MOS-
FETs including revolutionary MSmeshTM products.
-
s)
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s IDEAL FOR OFF-LINE POWER SUPPLIES
t(
s WELDING MACHINES
s LIGHTING
d uc
Pro
e
let
so
Ob
Table 2: Order Codes
PART NUMBER MARKING PACKAGE PACKAGING
STW28NK60Z W28NK60Z TO-247 TUBE
Rev. 1
November 2004 1/10
STW28NK60Z
Table 3: Absolute Maximum ratings
Symbol Parameter Value Unit
VDS Drain-source Voltage (VGS = 0) 600 V
VDGR Drain-gate Voltage (RGS = 20 K) 600 V
VGS Gate- source Voltage