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CEF05N6
N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY
FEATURES
650V, 5A, RDS(ON) = 2.4 @VGS = 10V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired. D
TO-220F full-pak for through hole.
G
G
D
S
CEF SERIES
TO-220F S
ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted
Parameter Symbol Limit Units
Drain-Source Voltage VDS 650 V
Gate-Source Voltage VGS