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STP4NM60
STD3NM60 - STD3NM60-1
N-CHANNEL 600V - 1.3 - 3A TO-220/DPAK/IPAK
Zener-Protected MDmeshTMPower MOSFET
TYPE VDSS RDS(on) ID Pw
STP4NM60 600 V < 1.5 4A 69 W
STD3NM60 600 V < 1.5 3A 42 W
STD3NM60-1 600 V < 1.5 3A 42 W 3
2
s TYPICAL RDS(on) = 1.3 1
s HIGH dv/dt AND AVALANCHE CAPABILITIES
IPAK
s IMPROVED ESD CAPABILITY
TO-220
s LOW INPUT CAPACITANCE AND GATE
CHARGE
s LOW GATE INPUT RESISTANCE
s TIGHT PROCESS CONTROL AND HIGH 3
MANUFACTORING YIELDS 1
DPAK
DESCRIPTION
The MDmeshTM is a new revolutionary MOSFET
technology that associates the Multiple Drain pro- INTERNAL SCHEMATIC DIAGRAM
cess with the Company's PowerMESHTM horizontal
layout. The resulting product has an outstanding low
on-resistance, impressively high dv/dt and excellent
avalanche characteristics. The adoption of the
Company's proprietary strip technique yields overall
dynamic performance that is significantly better than
that of similar completition's products.
APPLICATIONS
The MDmeshTM family is very suitable for increase
the power density of high voltage converters allow-
ing system miniaturization and higher efficiencies.
ORDERING INFORMATION
SALES TYPE MARKING PACKAGE PACKAGING
STP4NM60 P4NM60 TO-220 TUBE
STD3NM60T4 D3NM60 DPAK TAPE & REEL
STD3NM60-1 D3NM60 IPAK TUBE
September 2002 1/12
STP4NM60 / STD3NM60 / STD3NM60-1
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
STD3NM60
STP4NM60
STD3NM60-1
VDS Drain-source Voltage (VGS = 0) 600 V
VDGR Drain-gate Voltage (RGS = 20 k) 600 V
VGS Gate- source Voltage