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SEMICONDUCTOR KHB1D2N80D/I
N CHANNEL MOS FIELD
TECHNICAL DATA EFFECT TRANSISTOR
General Description KHB1D2N80D
This planar stripe MOSFET has better characteristics, such as fast
switching time, low on resistance, low gate charge and excellent
A K
avalanche characteristics. It is mainly suitable for electronic ballast and C D L
DIM MILLIMETERS
A _
6.60 + 0.20
switching mode power supplies. B _
6.10 + 0.20
C _
5.34 + 0.30
D _
0.70 + 0.20
B E _
2.70 + 0.15
F _
2.30 + 0.10
FEATURES G 0.96 MAX
H 0.90 MAX
H
VDSS= 800V, ID= 1.2A J
E J _
1.80 + 0.20
G N K _
2.30 + 0.10
Drain-Source ON Resistance : L _
0.50 + 0.10
F F M M _
0.50 + 0.10
RDS(ON)=16 (Max), @VGS = 10V
N 0.70 MIN
Qg = 7.0nC(typ.) O 0.1 MAX
1 2 3
1. GATE
2. DRAIN
3. SOURCE
O
MAXIMUM RATING (Ta=25 )
DPAK (1)
RATING
CHARACTERISTIC SYMBOL UNIT
KHB1D2N80D KHB1D2N80I
KHB1D2N80I
Drain-Source Voltage VDSS 800 V
A H
Gate-Source Voltage VGSS 30 V C J
D
@TC=25 1.2
ID
Drain Current @TC=100 0.75 A
B
DIM MILLIMETERS
A _
6.6 + 0.2
Pulsed (Note1) IDP 4.8 B _
6.1 + 0.2
M
K
C _
5.34 + 0.3
Single Pulsed Avalanche Energy EAS P
130 mJ D _
0.7 + 0.2
(Note 2) N
E _
9.3 +0.3
E
Repetitive Avalanche Energy EAR F _
2.3 + 0.2
5.0 mJ
(Note 1) G _
0.76 + 0.1
G H _
2.3 + 0.1
Peak Diode Recovery dv/dt
dv/dt 4.0 V/ns L J _
0.5 + 0.1
(Note 3) F F
K _
1.8 + 0.2
Drain Power Ta=25 50 W L _
0.5 + 0.1
PD M _
1.0 + 0.1
Dissipation Derate above 25 0.36 W/ 1 2 3 N 0.96 MAX
P _
1.02 + 0.3
Maximum Junction Temperature Tj 150
Storage Temperature Range Tstg -55 150
Thermal Characteristics
Thermal Resistance, Junction-to-Case RthJC 2.5 /W
IPAK(1)
Thermal Resistance, Case-to-Sink RthCS 50 /W
Thermal Resistance, Junction-to- D
RthJA 110 /W
Ambient
* : Mounted on the minimum pad size recommended(PCB Mount)
G
S
2007. 3. 26 Revision No : 1 1/6
KHB1D2N80D/I
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage BVDSS ID=250 A, VGS=0V 800 - - V
Breakdown Voltage Temperature Coefficient BVDSS/ Tj ID=250 A, Referenced to 25 - 1.0 - V/
Gate Threshold Voltage Vth VDS=VGS, ID=250 A 3.0 3.75 5.0 V
VDS=800V, VGS=0V, - - 10
Drain Cut-off Current IDSS A
VDS=640V, VGS=0V, TC= 125 - - 100
Gate Leakage Current IGSS VGS= 30V, VDS=0V - - 100 nA
Drain-Source ON Resistance RDS(ON) VGS=10V, ID=0.6A - 13 16
Dynamic
Total Gate Charge Qg - 7.0 -
VDS=640V, ID=1.2A
Gate-Source Charge Qgs - 1.5 - nC
VGS=10V (Note4,5)
Gate-Drain Charge Qgd - 4.0 -
Turn-on Delay time td(on) - 35 -
VDD=400V
Turn-on Rise time tr - 90 -
RG=25 ns
Turn-off Delay time td(off) - 40 -
ID=1.2A (Note4,5)
Turn-off Fall time tf - 90 -
Input Capacitance Ciss - 170 -
Output Capacitance Coss VDS=25V, VGS=0V, f=1.0MHz - 25 - pF
Reverse Transfer Capacitance Crss - 3 -
Source-Drain Diode Ratings
Continuous Source Current IS - - 1.2
VGS Pulsed Source Current ISP - - 4.8
Diode Forward Voltage VSD IS= 1.2A, VGS=0V - - 1.5 V
Reverse Recovery Time trr IS= 1.2A, VGS=0V, - 300 - ns
Reverse Recovery Charge Qrr dIs/dt=100A/ s - 600 - C
Note 1) Repetivity rating : Pulse width limited by junction temperature.
Note 2) L =170mH, IS=1.2A, VDD=50V, RG = 25 , Starting Tj=25 .
Note 3) IS 1.2A, dI/dt 300A/ , VDD BVDSS, Starting Tj=25 .
Note 4) Pulse Test : Pulse width 300 , Duty Cycle 2%.
Note 5) Essentially independent of operating temperature.
2007. 3. 26 Revision No : 1 2/6
KHB1D2N80D/I
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