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IXDH 30N120
IXDH 30N120 D1

High Voltage IGBT VCES = 1200 V
with optional Diode IC25 = 60 A
VCE(sat) typ = 2.4 V
Short Circuit SOA Capability
C C
Square RBSOA TO-247 AD (IXDH)
G G

G
E E C C (TAB)
E
IXDH 30N120 IXDH 30N120 D1 G = Gate, E = Emitter
C = Collector , TAB = Collector

Symbol Conditions Maximum Ratings Features
VCES TJ = 25