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2SB1 308
TRANSISTOR SOT-89-3L
1. BASE
FEATURES
Power Transistor 2. COLLECTOR
Excellent DC current Gain
3. EMITTER
Low Collector-emitter Saturation Voltage
MAXIMUM RATINGS (Ta=25 unless otherwise noted)
Symbol Parameter Value Unit
VCBO Collector-Base Voltage -30 V
VCEO Collector-Emitter Voltage -20 V
VEBO Emitter-Base Voltage -6 V
IC Collector Current -3 A
PC Collector Power Dissipation 500 mW
RJA Thermal Resistance From Junction To Ambient 250 /W
Tj Junction Temperature 150
Tstg Storage Temperature -55~+150
ELECTRICAL CHARACTERISTICS (Ta=25 unless otherwise specified)
Parameter Symbol Test conditions Min Typ Max Unit
Collector-base breakdown voltage V(BR)CBO IC=-50