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STW8NC80Z
N-CHANNEL 800V - 1.3 - 6.7A TO-247
Zener-Protected PowerMESHTMIII MOSFET
TYPE VDSS RDS(on) ID
STW8NC80Z 800 V < 1.5 6.7 A
n TYPICAL RDS(on) = 1.3
n EXTREMELY HIGH dv/dt CAPABILITY GATE-
TO-SOURCE ZENER DIODES
n 100% AVALANCHE TESTED
n VERY LOW INTRINSIC CAPACITANCES
n GATE CHARGE MINIMIZED
DESCRIPTION TO-247
The third generation of MESH OVERLAYTM Power
MOSFETs for very high voltage exhibits unsur-
passed on-resistance per unit area while integrating
back-to-back Zener diodes between gate and
source. Such arrangement gives extra ESD capabil- INTERNAL SCHEMATIC DIAGRAM
ity with higher ruggedness performance as request-
ed by a large variety of single-switch applications.
APPLICATIONS
n SINGLE-ENDED SMPS IN MONITORS,
COMPUTER AND INDUSTRIAL APPLICATION
n WELDING EQUIPMENT
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
VDS Drain-source Voltage (VGS = 0) 800 V
VDGR Drain-gate Voltage (RGS = 20 k) 800 V
VGS Gate- source Voltage