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2SA1 037
SOT-23
TRANSISTOR(PNP)
FEATURES
Excellent hFE linearity.
Complments the 2SC2412 1. BASE
2. EMITTER
3. COLLECTOR
MARKING : FQ, FR, FS
MAXIMUM RATINGS (TA=25 unless otherwise noted)
Symbol Parameter Value Units
VCBO Collector-Base Voltage -60 V
VCEO Collector-Emitter Voltage -50 V
VEBO Emitter-Base Voltage -6 V
IC Collector Current -Continuous 150 mA
PC Collector Power Dissipation 200 mW
TJ Junction Temperature 150
Tstg Storage Temperature -55-150
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO IC=-50A,IE=0 -60 V
Collector-emitter breakdown voltage V(BR)CEO IC=-1mA,IB=0 -50 V
Emitter-base breakdown voltage V(BR)EBO IE=-50A,IC=0 -6 V
Collector cut-off current ICBO VCB=-60V,IE=0 -0.1 A
Emitter cut-off current IEBO VEB=-6V,IC=0 -0.1 A
DC current gain hFE VCE=-6V,IC=-1mA 120 560
Collector-emitter saturation voltage VCE(sat) IC=-50mA,IB=-5mA -0.5 V
Transition frequency fT VCE=-12V,IC=-2mA,f=30MHz 140 MHz
Collector output capacitance Cob VCB=-12V,IE=0,f=1MHz 4.0 5.0 pF
CLASSIFICATION OF hFE
Rank Q R S
Range 120 - 270 180 - 390 270 - 560
1
JinYu www.htsemi.com
semiconductor
Date:2011/05
2SA1 0 3 7
Typical Characteristics
2
JinYu www.htsemi.com
semiconductor
Date:201/5