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2SD667/2SD667A
TO-92L Transistor (NPN)
TO-92L
1. EMITTER
4.700
5.100
2. COLLECTOR
7.800
3. BASE 8.200
3
2 0.600
1 0.800
Features
Low frequency power amplifier 0.350
0.550
Complementary pair with 2SB647/A 13.800
14.200
MAXIMUM RATINGS (TA=25 unless otherwise noted)
Symbol Parameter Value Units
1.270 TYP
VCBO Collector- Base Voltage 120 V 2.440
2.640
VCEO Collector-Emitter Voltage 2SD667 80
V 0.000 1.600
2SD667A 100 0.300
0.350
VEBO Emitter-Base Voltage 5 V 0.450
3.700
Collector Current -Continuous 1 A 4.100
IC 1.280
1.580
PC Collector Power Dissipation 900 mW 4.000
TJ Junction Temperature 150
Dimensions in inches and (millimeters)
Tstg Storage Temperature -55-150
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO IC=10A,IE=0 120 V
2SD667 80 V
Collector-emitter breakdown voltage V(BR)CEO IC=1mA,IB=0
2SD667A 100 V
Emitter-base breakdown voltage V(BR)EBO IE=10A,IC=0 5 V
Collector cut-off current ICBO VCB=100V,IE=0 10 A
Emitter cut-off current IEBO VEB=4V,IC=0 10 A
2SD667 60 320
hFE(1) VCE=5V,IC=150mA
DC current gain 2SD667A 60 200
hFE(2) VCE=5V,IC=500mA 30
Collector-emitter saturation voltage VCE(sat) IC=500mA,IB=50mA 1 V
Base-emitter voltage VBE VCE=5V,IC=150mA 1.5 V
Transition frequency fT VCE=5V,IC=150mA 140 MHz
Collector output capacitance Cob VCB=10V,IE=0,f=1MHz 12 pF
CLASSIFICATION OF hFE(1)
Rank B C D
2SD667 60-120 100-200 160-320
Range
2SD667A 60-120 100-200
2SD667/2SD667A
TO-92L Transistor (NPN)
Typical Characteristics
2SD667/2SD667A
TO-92L Transistor (NPN)