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Philips Semiconductors Product specification

PowerMOS transistor BUK565-200A
Logic level FET

GENERAL DESCRIPTION QUICK REFERENCE DATA
N-channel enhancement mode logic SYMBOL PARAMETER MAX. UNIT
level field-effect power transistor in a
plastic envelope suitable for surface VDS Drain-source voltage 200 V
mount applications. ID Drain current (DC) 14 A
The device is intended for use in Ptot Total power dissipation 125 W
Switched Mode Power Supplies Tj Junction temperature 175