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PHD/PHU77NQ03T
N-channel TrenchMOS FET
Rev. 01 -- 28 November 2006 Product data sheet




1. Product profile

1.1 General description
N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using
TrenchMOS technology.

1.2 Features
I Fast switching I Low thermal resistance


1.3 Applications
I DC-to-DC converters I Computer motherboard


1.4 Quick reference data
I VDS 25 V I ID 75 A
I RDSon 9.5 m I QGD = 3.2 nC (typ)


2. Pinning information
Table 1. Pinning
Pin Description Simplified outline Symbol
1 gate (G)
mb
2 drain (D) [1]
mb
3 source (S) D

mb mounting base; connected to
drain (D) G

2 mbb076 S
1 3
1 2 3

SOT428 (DPAK) SOT533 (IPAK)

[1] It is not possible to make a connection to pin 2 of the SOT428 package.
NXP Semiconductors PHD/PHU77NQ03T
N-channel TrenchMOS FET



3. Ordering information
Table 2. Ordering information
Type number Package
Name Description Version
PHD77NQ03T DPAK plastic single-ended surface-mounted package; 3 leads SOT428
(one lead cropped)
PHU77NQ03T IPAK plastic single-ended package; 3 leads (in-line) SOT533


4. Limiting values
Table 3. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
VDS drain-source voltage 25