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BCX54
NPN Transistors
Elektronische Bauelemente Plastic-Encapsulate Transistors
RoHS Compliant Product
1
2 SOT-89
3
1.BASE
4.4~4.6
2.COLLECTOR
1.4~1.8
1.4~1.6
3.EMITTER
Features
3.94~4.25
2.3~2.6
Power dissipation 0.36~0.56
o
PCM: 0.5 W (Tamb=25 C)
Collector current 0.32~0.52
0.35~0.44
0.9~1.1
1.5Ref.
ICM: 1 A 2.9~3.1
Collector-base voltage
V(BR)CBO: 45 V Dimensision in Millimeter
Operating and storage junction temperature range
o o
TJ, Tstg: -55 C to +150 C
ELECTRICAL CHARACTERISTICS (Tamb=25 oC unless otherwise specified)
Parameter Symbol Test conditions MIN MAX UNIT
Collector-base breakdown voltage V(BR)CBO Ic=100