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2SD313(NPN)
TO-220 Transistor
1. BASE
TO-220
2. COLLECTOR
3. EMITTER
3
2
Features
1
Low Collector-Emitter Saturation Voltage
Vce(sat)=1V(MAX)@IC=2A,IB=0.2A
DC Current Gain hFE=40~320@IC=1A
Complementray to PNP 2SB507
MAXIMUM RATINGS (TA=25 unless otherwise noted)
Symbol Parameter Value Units Dimensions in inches and (millimeters)
VCBO Collector-Base Voltage 60 V
VCEO Collector-Emitter Voltage 60 V
VEBO Emitter-Base Voltage 5 V
IC Collector Current -Continuous 3 A
PC Collector Power Dissipation 1.75 W
TJ Junction Temperature 150
Tstg Storage Temperature -55-150
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO IC=100A, IE=0 60 V
Collector-emitter breakdown voltage V(BR)CEO IC=1mA, IB=0 60 V
Emitter-base breakdown voltage V(BR)EBO IE=100A, IC=0 5 V
Collector cut-off current ICBO VCB=60V, IE=0 100 A
Collector cut-off current ICEO VCE=60V, IE=0 1 mA
Emitter cut-off current IEBO VEB=4V, IC=0 100 A
hFE(1) VCE=2V, IC=1A 40 320
DC current gain
hFE(2) VCE=2V, IC=0.1A 40
Collector-emitter saturation voltage VCE(sat) IC=2A, IB=200mA 1 V
Base-emitter voltage VBE VCE=2V, IC=1A 1.5 V
Transition frequency fT VCE=5V, IC=500mA 8 MHz
Collector output capacitance Cob VCB=10V, IE=0,f=1MHz 65 pF
CLASSIFICATION OF hFE(1)
Rank C D E F
Range 40-80 60-120 100-200 160-320
2SD313(NPN)
TO-220 Transistor
Typical Characteristics
Typical Characteristics