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BF720T1G, BF720T3G
NPN Silicon Transistor
Features
These Devices are Pb--Free, Halogen Free/BFR Free and are RoHS
Compliant
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MAXIMUM RATINGS
NPN SILICON TRANSISTOR
Rating Symbol Value Unit
SURFACE MOUNT
Collector -- Emitter Voltage VCEO 300 Vdc
Collector -- Base Voltage VCBO 300 Vdc
Collector -- Emitter Voltage VCER 300 Vdc COLLECTOR 2,4
Emitter -- Base Voltage VEBO 5.0 Vdc
Collector Current IC 100 mAdc BASE
1
Total Power Dissipation up to TA = 25C PD 1.5 W
Storage Temperature Range Tstg --65 to +150 C
EMITTER 3
Junction Temperature TJ 150 C
THERMAL CHARACTERISTICS
MARKING
Characteristic Symbol Max Unit
DIAGRAM
Thermal Resistance, RJA 83.3 C/W
Junction--to--Ambient (Note 1) 1
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended AYW
Operating Conditions is not implied. Extended exposure to stresses above the DC G
Recommended Operating Conditions may affect device reliability.
SOT-
-223 (TO-
-261) G
1. Device mounted on a glass epoxy printed circuit board 1.575 in. x 1.575 in. x
0.059 in.; mounting pad for the collector lead min. 0.93 in2. CASE 318E 1
STYLE 1
A = Assembly Location
Y = Year
W = Work Week
DC = Device Code
G = Pb--Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device Package Shipping
BF720T1G SOT--223 1000 / Tape & Reel
(Pb--Free)
BF720T3G SOT--223 4000 / Tape & Reel
(Pb--Free)
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Semiconductor Components Industries, LLC, 2010 1 Publication Order Number:
September, 2010 - Rev. 7
- BF720T1/D
BF720T1G, BF720T3G
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted)
Characteristics Symbol Min Max Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage V(BR)CEO 300 -- Vdc
(IC = 1.0 mAdc, IB = 0)
Collector-Base Breakdown Voltage V(BR)CBO 300 -- Vdc
(IC = 100 mAdc, IE = 0)
Collector-Emitter Breakdown Voltage V(BR)CER 300 -- Vdc
(IC = 100 mAdc, RBE = 2.7 k)
Emitter-Base Breakdown Voltage V(BR)EBO 5.0 -- Vdc
(IE = 10 mAdc, IC = 0)
Collector-Base Cutoff Current ICBO -- 10 nAdc
(VCB = 200 Vdc, IE = 0)
Collector--Emitter Cutoff Current ICER
(VCE = 250 Vdc, RBE = 2.7 k) -- 50 nAdc
(VCE = 200 Vdc, RBE = 2.7 k, TJ = 150C) -- 10 mAdc
ON CHARACTERISTICS
DC Current Gain hFE 50 -- --
(IC = 25 mAdc, VCE = 20 Vdc)
Collector-Emitter Saturation Voltage VCE(sat) -- 0.6 Vdc
(IC = 30 mAdc, IB = 5.0 mAdc)
DYNAMIC CHARACTERISTICS
Current--Gain -- Bandwidth Product fT 60 -- MHz
(IC = 10 mAdc, VCE = 10 Vdc, f = 35 MHz)
Feedback Capacitance Cre -- 1.6 pF
(VCE = 30 Vdc, IC = 0, f = 1.0 MHz)
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2
BF720T1G, BF720T3G
120
VCE = 10 Vdc
TJ = +125C
100
hFE , DC CURRENT GAIN
80
25C
60
40
--55C
20
0
0.1 1.0 10 100
IC, COLLECTOR CURRENT (mA)
Figure 1. DC Current Gain
100 80
f T, CURRENT--GAIN -- BANDWIDTH (MHz)
Ceb @ 1MHz 70
60
C, CAPACITANCE (pF)
10
50
40
1.0 Ccb @ 1MHz
30 TJ = 25C
VCE = 20 V
20 f = 20 MHz
0.1 10
0.1 1.0 10 100 1000 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100
VR, REVERSE VOLTAGE (VOLTS) IC, COLLECTOR CURRENT (mA)
Figure 2. Capacitance Figure 3. Current-
-Gain - Bandwidth
-
1.4
1.2
VCE(sat) @ 25C, IC/IB = 10
VCE(sat) @ 125C, IC/IB = 10
1.0
V, VOLTAGE (VOLTS)
VCE(sat) @ --55C, IC/IB = 10
0.8 VBE(sat) @ 25C, IC/IB = 10
VBE(sat) @ 125C, IC/IB = 10
0.6 VBE(sat) @ --55C, IC/IB = 10
VBE(on) @ 25C, VCE = 10 V
0.4 VBE(on) @ 125C, VCE = 10 V
VBE(on) @ --55C, VCE = 10 V
0.2
0.0
0.1 1.0 10 100
IC, COLLECTOR CURRENT (mA)
Figure 4. "ON" Voltages
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3
BF720T1G, BF720T3G
PACKAGE DIMENSIONS
SOT-
-223 (TO--261)
CASE 318E--04
ISSUE N
D
b1 NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: INCH.
4 MILLIMETERS INCHES
DIM MIN NOM MAX MIN NOM MAX
HE E A 1.50 1.63 1.75 0.060 0.064 0.068
1 2 3 A1 0.02 0.06 0.10 0.001 0.002 0.004
b 0.60 0.75 0.89 0.024 0.030 0.035
b1 2.90 3.06 3.20 0.115 0.121 0.126
c 0.24 0.29 0.35 0.009 0.012 0.014
b D 6.30 6.50 6.70 0.249 0.256 0.263
E 3.30 3.50 3.70 0.130 0.138 0.145
e1 e 2.20 2.30 2.40 0.087 0.091 0.094
e e1 0.85 0.94 1.05 0.033 0.037 0.041
L 0.20 ------ ------ 0.008 ------ ------
C L1 1.50 1.75 2.00 0.060 0.069 0.078
HE 6.70 7.00 7.30 0.264 0.276 0.287
A 0 -- 10 0 -- 10
0.08 (0003) STYLE 1:
A1 L PIN 1. BASE
L1
2. COLLECTOR
3. EMITTER
4. COLLECTOR
SOLDERING FOOTPRINT*
3.8
0.15
2.0
0.079
6.3
2.3 2.3
0.248
0.091 0.091
2.0
0.079
1.5 SCALE 6:1 inches
mm
0.059
*For additional information on our Pb--Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights
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