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SEMICONDUCTOR KML0D3P20V
TECHNICAL DATA P-Ch Trench MOSFET
General Description
It s Mainly Suitable for Load Switching Cell Phones, Battery Powered
Systems and Level-Shifter.
FEATURES
VDSS=-20V, ID=-0.3A
Drain-Soure ON Resistance
: RDS(ON)=1.2 @ VGS=-4.5V
: RDS(ON)=1.6 @ VGS=-2.5V
: RDS(ON)=2.7 @ VGS=-1.8V
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC SYMBOL P-Ch UNIT Marking
Drain-Source Voltage VDSS -20 V
Gate-Source Voltage VGSS 6 V
DC @TA=25 -300
Drain Current DC @TA=85
ID*
-210
Type Name
LB
mA
Pulsed IDP -650
Source-Drain Diode Current IS 125
Drain Power Dissipation P D* 150 mW
Maximum Junction Temperature Tj 150
Storage Temperature Range Tstg -55 150
Thermal Resistance, Junction to Ambient RthJA* 446 /W
Note 1) *Surface Mounted on FR4 Board, t 5sec
PIN CONNECTION (TOP VIEW)
D
3 3
2 1
G S 2 1
2012. 3. 5 Revision No : 0 1/4
KML0D3P20V
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage BVDSS ID=-250 A, VGS=0V -20 - - V
Drain Cut-off Current IDSS VGS=0V, VDS=-16V - -0.3 -100 nA
Gate Leakage Current IGSS VGS= 4.5V, VDS=0V - 1.0 2.0 A
Gate Threshold Voltage Vth VDS=VGS, ID=-250 A -0.45 - -1.0
VGS=-4.5V, ID=-300mA - 0.80 1.20
V
Drain-Source ON Resistance RDS(ON)* VGS=-2.5V, ID=-250mA - 1.20 1.60
VGS=-1.8V, ID=-150mA - 1.80 2.70
VGS=4.5V, VDS=5V 700 - -
ON State Drain Current ID(ON)* mA
VGS=-4.5V, VDS=-5V -700 - -
Forward Transconductance gfs* VDS=-10V, ID=-300mA - 0.4 - S
Source-Drain Diode Forward Voltage VSD* IS=-150mA, VGS=0V - -0.8 -1.2 V
Dynamic
Total Gate Charge Qg* - 1500 -
Gate-Source Charge QgS* VDS=-10V, ID=-250mA, VGS=-4.5V - 150 - pC
Gate-Drain Charge Qgd* - 450 -
Turn-on Delay time td(on)* - 5 -
VDD=-10V, VGS=-4.5V
ID=-200mA, RG=10
Turn-off Delay time td(off)* - 35 -
Note 2) *Pulse test : Pulse width 300 , Duty Cycle 2%.
2012. 3. 5 Revision No : 0 2/4
KML0D3P20V
2012. 3. 5 Revision No : 0 3/4
KML0D3P20V
2012. 3. 5 Revision No : 0 4/4