Text preview for : stgp3nb60s-stgd3nb60s.pdf part of . Electronic Components Datasheets stgp3nb60s-stgd3nb60s . Electronic Components Datasheets Active components Transistors ST stgp3nb60s-stgd3nb60s.pdf
Back to : stgp3nb60s-stgd3nb60s.pdf | Home
STGP3NB60S
STGD3NB60S
N-CHANNEL 3A - 600V - TO-220 / DPAK
PowerMESHTM IGBT
TYPE VCES VCE(sat) IC
STGP3NB60S 600 V < 1.5 V 3A
STGD3NB60S 600 V < 1.5 V 3A
s HIGH INPUT IMPEDANCE (VOLTAGE DRIVEN) 3
s VERY LOW ON-VOLTAGE DROP (Vcesat) 1
s OFF LOSSES INCLUDE TAIL CURRENT 3
2
1
s ADD SUFFIX "T4" FOR ORDERING IN TAPE & DPAK
REEL (SMD VERSION) TO-220
DESCRIPTION
Using the latest high voltage technology based on a
patented strip layout, STMicroelectronics has INTERNAL SCHEMATIC DIAGRAM
designed an advanced family of IGBTs, the
PowerMESHTM IGBTs, with outstanding
performances. The suffix "S" identifies a family
optimized achieve minimum on-voltage drop for low
frequency applications (<1kHz).
APPLICATIONS
s MOTOR CONTROL
s LIGHT DIMMER
s STATIC RELAYS
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
STGP3NB60S STGD3NB60S
VCES Collector-Emitter Voltage (VGS = 0) 600 V
VECR Reverse Battery Protection 20 V
VGE Gate-Emitter Voltage