Text preview for : ktx112t.pdf part of . Electronic Components Datasheets ktx112t . Electronic Components Datasheets Active components Transistors KEC ktx112t.pdf
Back to : ktx112t.pdf | Home
SEMICONDUCTOR KTX112T
TECHNICAL DATA EPITAXIAL PLANAR NPN/PNP TRANSISTOR
GENERAL PURPOSE APPLICATION.
FEATURES E
K B K
Including two devices in TS6.
DIM MILLIMETERS
(Thin Super Mini type with 6 pin) 1 6 A _
2.9 + 0.2
B 1.6+0.2/-0.1
Simplify circuit design. C _
0.70 + 0.05
G
2 5 _
Reduce a quantity of parts and manufacturing process. D 0.4 + 0.1
F
E 2.8+0.2/-0.3
A
3 4 F _
1.9 + 0.2
G
G 0.95
D
H _
0.16 + 0.05
I 0.00-0.10
J 0.25+0.25/-0.15
EQUIVALENT CIRCUIT (TOP VIEW) K 0.60
C
L
L 0.55
6 5 4 I H
J J
Marking
1. Q1 EMITTER
6 5 4 2. Q1 BASE
h FE Rank Lot No. 3. Q2 COLLECTOR
Q1 Q2
4. Q2 EMITTER
5. Q2 BASE
Type Name
C 6. Q1 COLLECTOR
1 2 3
1 2 3 TS6
Q1 MAXIMUM RATINGS (Ta=25 )
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage VCBO 35 V
Collector-Emitter Voltage VCEO 30 V
Emitter-Base Voltage VEBO 5 V
Collector Current IC 800
Emitter Current IE -800
Q2 MAXIMUM RATINGS (Ta=25 )
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage VCBO -35 V
Collector-Emitter Voltage VCEO -30 V
Emitter-Base Voltage VEBO -5 V
Collector Current IC -800
Emitter Current IE 800
Q1, Q2 MAXIMUM RATINGS (Ta=25 )
CHARACTERISTIC SYMBOL RATING UNIT
Collector Power Dissipation PC * 0.9 W
Junction Temperature Tj 150
Storage Temperature Range Tstg -55 150
* Package mounted on a ceramic board (600 0.8 )
2003. 4. 4 Revision No : 0 1/4
KTX112T
Q1 ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT.
Collector Cut-off Current ICBO VCB=35V, IE=0 - - 0.1
Emitter Cut-off Current IEBO VEB=5V, IC=0 - - 0.1
hFE(1) (Note) VCE=1V, IC=100 100 - 320
DC Current Gain
hFE(2) VCE=1V, IC=700 35 - -
Collector-Emitter Saturation Voltage VCE(SAT) IC=500 , IB=20 - - 0.5 V
Base-Emitter Voltage VBE VCE=1V, IC=10 0.5 - 0.8 V
Transition Frequency fT VCE=5V, IC=10 - 120 -
Collector Output Capacitance Cob VCB=10V, IE=0, f=1 - 19 -
Note) hFE(1) Classification O:100~200, Y:160~320.
Q2 ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT.
Collector Cut-off Current ICBO VCB=-35V, IE=0 - - -0.1
Emitter Cut-off Current IEBO VEB=-5V, IC=0 - - -0.1
hFE(1) (Note) VCE=-1V, IC=-100 100 - 320
DC Current Gain
hFE(2) VCE=-1V, IC=-700 35 - -
Collector-Emitter Saturation Voltage VCE(SAT) IC=-500 , IB=-20 - - -0.7 V
Base-Emitter Voltage VBE VCE=-1V, IC=-10 -0.5 - -0.8 V
Transition Frequency fT VCE=-5V, IC=-10 - 120 -
Collector Output Capacitance Cob VCB=-10V, IE=0, f=1 - 19 -
Note) hFE(1) Classification O:100~200, Y:160~320.
2003. 4. 4 Revision No : 0 2/4
KTX112T
Q 1 (NPN TRANSISOR)
I C - VCE h FE - I C
1k 1k
COMMON EMITTER COMMON EMITTER
COLLECTOR CURRENT I C (mA)
Ta=25 C 8 500 VCE =1V
800
DC CURRENT GAIN h FE
7 300
6 Ta=100 C
600 5
4 Ta=25 C
100
3
400 Ta=-25 C
2 50
30
200 I B =1mA
0
0 10
0 1 2 3 4 5 6 1 3 10 30 100 300 1k
COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR CURRENT I C (mA)
VCE(sat) - I C I C - VBE
1 1k
COLLECTOR-EMITTER SATURATION
COMMON EMITTER COMMON EMITTER
COLLECTOR CURRENT I C (mA)
I C /I B =25 500 VCE =1V
0.5 300
VOLTAGE VCE(sat) (V)
0.3
C 100
00
=1 50
C
Ta
C
C
0.1 25 C 30
5
100
Ta=25
Ta=-2
Ta=-25 C -25 C
Ta=
0.05 10
0.03 Ta=25 C 5
Ta=100 C 3
0.01 1
1 3 10 30 100 300 1k 0 0.2 0.4 0.6 0.8 1.0 1.2
COLLECTOR CURRENT I C (mA) BASE-EMITTER VOLTAGE VBE (V)
Q 2 (PNP TRANSISOR)
I C - VCE h FE - I C
-1k 2k
COMMON EMITTER COMMON EMITTER
COLLECTOR CURRENT I C (mA)
Ta=25 C 1k VCE =-1V
DC CURRENT GAIN h FE
-800 -8
-7 500
-6
300
-600 -5 Ta=100 C
-4
Ta=25 C
100
-400 -3 Ta=-25 C
-2 50
-200 30
IB =-1mA
0
0 10
0 -1 -2 -3 -4 -5 -6 -1 -3 -10 -30 -100 -300 -1k
COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR CURRENT I C (mA)
2003. 4. 4 Revision No : 0 3/4
KTX112T
VCE(sat) - I C I C - VBE
-3
COLLECTOR-EMITTER SATURATION
-1k
COMMON EMITTER COMMON
COLLECTOR CURRENT I C (mA)
IC /I B =25 -500 EMITTER
-1 -300 VCE =-1V
-0.5 -100
VCE(sat) (V)
-0.3
25 C
C
C
-50
100
-25
-30
Ta=
Ta=
Ta=
-0.1
-10
-0.05 Ta=100 C
-0.03 Ta=25 C -5
Ta=-25 C -3
-0.01 -1
-1 -3 -10 -30 -100 -300 -1k -0.2 -0.4 -0.6 -0.8 -1.0
COLLECTOR CURRENT I C (mA) BASE-EMITTER VOLTAGE VBE (V)
Pc - Ta
1.2
COLLECTOR POWER DISSIPATION
MOUNTED ON A
1.0 CERAMIC BOARD
(600mm 2 0.8mm)
0.8
PC (W)
0.6
0.4
0.2
0
0 20 40 60 80 100 120 140 160
AMBIENT TEMPERATURE Ta ( C)
2003. 4. 4 Revision No : 0 4/4