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2STF2550
2STN2550

Low voltage high performance PNP power transistors
Preliminary Data

Features
Very low collector-emitter saturation voltage
High current gain characteristic
Fast switching speed 4
4
Surface mounting devices in medium power 3
SOT-89 and SOT-223 packages 2 3
2
1 1
Applications SOT-89 SOT-223

Emergency lighting
LED
Motherboard and hard disk drive
Mobile equipment
Figure 1. Internal schematic diagram
Battery charger
Voltage regulation

Description
The 2STF2550 and 2STN2550 are PNP
transistors manufactured using new "PB-HCD"
(Power bipolar high current density) technology.
The resulting transistor shows exceptional high
gain performances coupled with very low
saturation voltage.

Table 1. Device summary
Order codes Marking Package Packaging

2STF2550 2550 SOT-89
Tape and reel
2STN2550 N2550 SOT-223

November 2008 Rev 1 1/8
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to www.st.com 8
change without notice.
Electrical ratings 2STF2550 - 2STN2550

1 Electrical ratings

Table 2. Absolute maximum rating
Value

Symbol Parameter 2STF2550 2STN2550 Unit

SOT-89 SOT-223

VCES Collector-emitter voltage (VCE = 0) -50 V
VCEO Collector-emitter voltage (IB = 0) -50 V
VEBO Emitter-base voltage (IC = 0) -5 V
IC Collector current -5 A
ICM Collector peak current (tP < 5 ms) -10 A
IB Base current -1 A
PTOT Total dissipation at Tamb = 25