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Philips Semiconductors Product Specification

PowerMOS transistor PHD12N10E

GENERAL DESCRIPTION QUICK REFERENCE DATA
N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT
field-effect power transistor in a
plastic envelope suitable for surface VDS Drain-source voltage 100 V
mounting. The device is intended for ID Drain current (DC) 14 A
use in Switched Mode Power Ptot Total power dissipation 75 W
Supplies (SMPS), motor control, Tj Junction temperature 175