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TIP112
TO-220 Darlington Transistor (NPN)

TO-220
1. BASE

2. COLLECTOR

3. EMITTER
3
2
1
Features
High DC Current Gain : hFE=1000 @ VCE=4V, IC=1A(Min.)
Low Collector-Emitter Saturation Voltage
Industrial Use
MAXIMUM RATINGS (TA=25 unless otherwise noted)

Symbol Parameter Value Units
Dimensions in inches and (millimeters)
VCBO Collector-Base Voltage 100 V
VCEO Collector-Emitter Voltage 100 V
VEBO Emitter-Base Voltage 5 V
IC Collector Current -Continuous 2 A
PC Collector Power Dissipation 2 W
TJ Junction Temperature 150
Tstg Storage Temperature -55 to +150

ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)

Parameter Symbol Test conditions MIN TYP MAX UNIT

Collector-base breakdown voltage V(BR)CBO IC=10mA,IE=0 100 V

(SUS)
Collector-emitter breakdown voltage V(BR)CEO IC=30mA,IB=0 100 V

Emitter-base breakdown voltage V(BR)EBO IE=10mA,IC=0 5 V

Collector cut-off current ICEO VCE=50V,IB=0 2 mA

Collector cut-off current ICBO VCB=100V,IE=0 1 mA

Emitter cut-off current IEBO VEB=5V,IC=0 2 mA

hFE(1) VCE=4V,IC=1A 1000
DC current gain
hFE(2) VCE=4V,IC=2A 500

Collector-emitter saturation voltage VCE(sat) IC=2A,IB=8mA 2.5 V

Base-emitter voltage VBE VCE=4V,IC=2A 2.8 V

Collector output capacitance Cob VCB=10V,IE=0,f=0.1MHz 100 pF
TIP112
TO-220 Darlington Transistor (NPN)

Typical Characteristics