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PSMN030-150P
N-channel TrenchMOS SiliconMAX standard level FET
Rev. 02 -- 16 December 2010 Product data sheet

1. Product profile

1.1 General description
SiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) in
a plastic package using TrenchMOS technology. This product is designed and qualified for
use in computing, communications, consumer and industrial applications only.

1.2 Features and benefits
Higher operating power due to low Suitable for high frequency
thermal resistance applications due to fast switching
Low conduction losses due to low characteristics
on-state resistance

1.3 Applications
DC-to-DC converters Switched-mode power supplies

1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
VDS drain-source voltage Tj 25