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SEMICONDUCTOR KTC9011S
TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR
HIGH FREQUENCY APPLICATION.
HF, VHF BAND AMPLIFIER APPLICATION.
E
FEATURE L B L
DIM MILLIMETERS
High Power Gain : Gpe=29dB(Typ.) at f=10.7MHz. A _
2.93 + 0.20
B 1.30+0.20/-0.15
C 1.30 MAX
D
2 3 D 0.45+0.15/-0.05
A
G
E 2.40+0.30/-0.20
H
1 G 1.90
MAXIMUM RATING (Ta=25 ) H
J
0.95
0.13+0.10/-0.05
K 0.00 ~ 0.10
CHARACTERISTIC SYMBOL RATING UNIT
L 0.55
P P
M 0.20 MIN
Collector-Base Voltage VCBO 35 V N 1.00+0.20/-0.10
P 7
N
C
Collector-Emitter Voltage VCEO 30 V
J
M
K
Emitter-Base Voltage VEBO 5 V
Collector Current IC 50 mA 1. EMITTER
IE 2. BASE
Emitter Current -50 mA
3. COLLECTOR
Collector Power Dissipation PC * 350 mW
Junction Temperature Tj 150
Storage Temperature Range Tstg -55 150 SOT-23
* PC : Package Mounted On 99.5% Alumina (10 8 0.6 )
Marking
h FE Rank Lot No.
Type Name
BA
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB=35V, IE=0 - - 0.1 A
Emitter Cut-off Current IEBO VEB=4V, IC=0 - - 0.1 A
DC Current Gain hFE (Note) VCE=5V, IC=1mA 54 - 198
Collector-Emitter Saturation Voltage VCE(sat) IC=10mA, IB=1mA - - 0.4 V
Transition Frequency fT VCE=10V, IC=1mA, f=100MHz 100 - 400 MHz
Collector Output Capacitance Cob VCB=10V, IE=0, f=1MHz - 2.0 - pF
Note : hFE Classification F:54 80, G:72 108, H:97 146, I:132 198
2003. 3. 25 Revision No : 1 1/3
KTC9011S
STATIC CHARACTERISTICS h FE - I C
550 1K COMMON EMITTER
50 500
COLLECTOR CURRENT
450 VCE =6V
500
DC CURRENT GAIN h FE
400 Ta=25 C
40
350 300
I C (mA)
300 I
30
VCE =6V 250
G.H
200
20 100
150
100 F
10 I B =50