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BF1107
N-channel single gate MOSFET
Rev. 04 -- 9 January 2007 Product data sheet

1. Product profile

1.1 General description
The BF1107 is a depletion type field-effect transistor in a SOT23 package. The low loss
and high isolation capabilities of this MOSFET provide excellent RF switching functions.
Integrated diodes between gate and source and between gate and drain protect against
excessive input voltage surges. Drain and source are interchangeable.

CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.

1.2 Features
I Currentless RF switch

1.3 Applications
I Various RF switching applications such as:
N Passive loop through for VCR tuner
N Transceiver switching

1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
Lins(on) on-state insertion loss VSG = VDG = 0 V;
f = 50 MHz to 860 MHz
RS = RL = 50 - - 2.5 dB
RS = RL = 75 - - 3.5 dB
ISLoff off-state isolation VSG = VDG = 5 V;
f = 50 MHz to 860 MHz
RS = RL = 50 30 - - dB
RS = RL = 75 30 - - dB
RDSon drain-source on-state VGS = 0 V; ID = 1 mA - 12 20
resistance
VGS(p) gate-source pinch-off VDS = 1 V; ID = 20