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2SD874A
SOT-89 Transistor(NPN)
1. BASE
SOT-89
2. COLLECTOR
1 4.6
4.4
B
1.6
1.8
2 1.4 1.4
3. EMITTER
3
Features
2.6 4.25
2.4 3.75
0.8
Large collector power dissipation PC MIN
0.53
0.44 0.48 0.40
Low collector-emitter saturation voltage VCE(sat) 0.37
0.13 B 0.35
2x)
1.5
Complementary to 2SB766A 3.0
Dimensions in inches and (millimeters)
MAXIMUM RATINGS (TA=25 unless otherwise noted)
Symbol Parameter Value Units
VCBO Collector-Base Voltage 60 V
VCEO Collector-Emitter Voltage 50 V
VEBO Emitter-Base Voltage 5 V
IC Collector Current -Continuous 1 A
PC Collector Power Dissipation 0.5 W
TJ Junction Temperature 150
Tstg Storage Temperature -55-150
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO IC=10A,IE=0 60 V
Collector-emitter breakdown voltage V(BR)CEO IC=2mA,IB=0 50 V
Emitter-base breakdown voltage V(BR)EBO IE=10A,IC=0 5 V
Collector cut-off current ICBO VCB=20V,IE=0 0.1 A
Emitter cut-off current IEBO VEB=4V,IC=0 0.1 A
hFE(1) VCE=10V,IC=500mA 85 340
DC current gain
hFE(2) VCE=5V,IC=1A 50
Collector-emitter saturation voltage VCE(sat) IC=500mA,IB=50mA 0.4 V
Base-emitter saturation voltage VBE(sat) IC=500mA,IB=50mA 1.2 V
Transition frequency fT VCE=10V,IC=50mA,f=200MHz 200 MHz
Collector output capacitance Cob VCB=10V,IE=0,f=1MHz 20 pF
CLASSIFICATION OF hFE(1)
Rank Q R S
Range 85-170 120-240 170-340
Marking YQ YR YS
2SD874A
SOT-89 Transistor(NPN)
Typical Characteristics